![Table 3. Status Register Format](/images/new-backgrounds/133881/13388115x1.webp)
PMC | Pm25LV512/010 |
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WRITE ENABLE (WREN): The device will power up in the write disable state when Vcc is applied. All write instructions must therefore be preceded by the WREN instruction.
WRITE DISABLE (WRDI): To protect the device against inadvertent writes, the WRDI instruction disables all write commands. The WRDI instruction is independent of the status of the WP# pin.
READ STATUS REGISTER (RDSR): The RDSR instruction provides access to the status register. The READY/ BUSY and write enable status of the device can be determined by the RDSR instruction. Similarly, the Block Write Protection bits indicate the extent of protection employed. These bits are set by using the WRSR instruction. During internal write cycles, all other commands will be ignored except the RDSR instruction.
Table 3. Status Register Format
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
WPEN
X
X
X
BP1
BP0
WEN
RDY
Table 4. Read Status Register Bit Definition
Bit |
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| Bit 0 = 0 indicates the device is READY. | |
Bit 0 (RDY) | Bit 0 = 1 indicates the write cycle is in progress and the device is | ||
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| BUSY. | |
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Bit 1 (WEN) | Bit 1 = 0 indicates the device is not WRITE ENABLED. | ||
Bit 1 = 1 indicates the device is WRITE ENABLED. | |||
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Bit 2 | (BP0) | See Table 5. | |
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Bit 3 | (BP1) | See Table 5. | |
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Bits | |||
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| WPEN = 0 blocks the function of Write Protect pin (WP#). | |
Bit 7 | (WPEN) | WPEN = 1 activates the Write Protect pin (WP#). | |
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| See Table 6 for details. | |
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Bits | |||
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WRITE STATUS REGISTER (WRSR): The WRSR instruction allows the user to select one of four levels of protec- tion for the Pm25LV010. The Pm25LV010 is divided into four blocks where the top quarter (1/4), top half (1/2), or all of the memory blocks can be protected (locked out) from write. The Pm25LV512 is divided into 2 blocks where all of the memory blocks can be protected (locked out) from write. Any of the
The three bits, BP0, BP1, and WPEN, are nonvolatile cells that have the same properties and functions as the regular memory cells (e.g., WREN, RDSR).
Programmable Microelectronics Corp. | 8 | Issue Date: February, 2004, Rev: 1.4 |