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uPSD3212A, uPSD3212C, uPSD3212CV
Figure 73. External Data Memory WRITE CycleTable 120. External Data Memory AC Characteristics (with the 5V MCU Module)Note: 1. Conditions (in addition to those in Table 109., page133, VCC = 4.5 to 5.5V ): VSS = 0V; CL for Port 0, ALE an d PSEN o utput is 100p F;
CL for other outputs is 80pF
Symbol Parameter(1) 40MHz Oscillato r Variable Oscillator
1/tCLCL = 24 to 40MHz Unit
Min Max Min Max
tRLRH RD pulse width 120 6tCLCL – 30 ns
tWLWH WR pulse width 120 6tCLCL – 30 ns
tLLAX2 Address hold after ALE 10 tCLCL – 15 ns
tRHDX RD to valid data in 75 5tCLCL – 50 ns
tRHDX Data hold after RD 00ns
tRHDZ Data float after RD 38 2tCLCL – 12 ns
tLLDV ALE to valid data in 150 8tCLCL – 50 ns
tAVDV Address to valid data in 150 9tCLCL – 75 ns
tLLWL ALE to WR or RD 60 90 3tCLCL – 15 tCLCL + 15 ns
tAVWL Address valid to WR or RD 70 4tCLCL – 30 ns
tWHLH WR or RD High to ALE High 10 40 tCLCL – 15 tCLCL + 15 ns
tQVWX Data valid to WR transition 5 tCL CL – 20 ns
tQVWH Data set up before WR 125 7tCLCL – 50 ns
tWHQX Data hold after WR 5tCLCL – 20 ns
tRLAZ Address float after RD 00ns
PORT 2
PORT 0
ALE
WR
PSEN
P2.0 to P2.3 or A8-A11 from DPH A8-A11 from PCH
tQVWX
tLLWL tWLWH
tAVLL
tLHLL
tQVWH
DATA OUT A0-A7 from PCL INSTR IN
A0-A7 from
RI or DPL
tLLAX
tAVWL
tWHQX
tWHLH
AI07089