uPSD3212A, uPSD3212C, uPSD3212CV
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Table 121. External Data Memory AC Characteristics (with the 3V MCU Module)
Note: 1. Conditions (in addition to those in Table 110., page133, VCC = 3.0 to 3.6V ): VSS = 0V; CL for Port 0, ALE an d PSEN o utput is 100p F,
for 5V devices, and 50pF for 3V devices; CL for othe r outputs is 80pF, for 5V devices, and 50pF for 3V devices)
Table 122. A/D Analog Specification
Symbol Parameter(1) 24MHz Oscillato r Variable Oscillator
1/tCLCL = 8 to 24MHz Unit
Min Max Min Max
tRLRH RD pulse width 180 6tCLCL – 70 ns
tWLWH WR pulse width 180 6tCLCL – 70 ns
tLLAX2 Address hold after ALE 56 2t CLCL – 27 ns
tRHDX RD to valid data in 118 5tCLCL – 90 ns
tRHDX Data hold after RD 00ns
tRHDZ Data float after RD 63 2tCLCL – 20 ns
tLLDV ALE to valid data in 200 8tCLCL – 133 ns
tAVDV Address to valid data in 220 9tCLCL – 155 ns
tLLWL ALE to WR or RD 75 175 3tCLCL – 50 tCLCL + 50 ns
tAVWL Address valid to WR or RD 67 4tCLCL – 97 ns
tWHLH WR or RD High to ALE High 17 67 tCLCL – 25 tCLCL + 25 ns
tQVWX Data valid to WR transition 5 tCLCL – 37 ns
tQVWH Data set up before WR 170 7tCLCL – 122 ns
tWHQX Data hold after WR 15 tCLCL – 27 ns
tRLAZ Address float after RD 00ns
Symbol Parameter Test Condition Min. Typ. Max. Unit
AVREF Analog Power Supply Input
Voltage Range VSS VCC V
VAN Analog Input Voltage Range VSS – 0.3 AVREF + 0.3 V
IAVDD Current Following between VCC
and VSS 200 µA
CAIN Overall Accuracy ±2 l.s.b.
NNLE Non-Linearity Error ±2 l.s.b.
NDNLE Differential Non-Linearity Error ±2 l.s.b.
NZOE Zero-Offset Error ±2 l.s.b.
NFSE Full Scale Error ±2 l.s.b.
NGE Gain Error ±2 l.s.b.
TCONV Conversion Time at 8MHz clock 20 µs