Cypress CY7C1320BV18 Identification Register Definitions, Scan Register Sizes, Instruction Codes

Page 17

CY7C1316BV18, CY7C1916BV18

CY7C1318BV18, CY7C1320BV18

Identification Register Definitions

Instruction Field

 

Value

 

Description

CY7C1316BV18

CY7C1916BV18

CY7C1318BV18

CY7C1320BV18

 

 

Revision Number

000

000

000

000

Version number.

(31:29)

 

 

 

 

 

Cypress Device ID

11010100010000101

11010100010001101

11010100010010101

11010100010100101

Defines the type of

(28:12)

 

 

 

 

SRAM.

Cypress JEDEC ID

00000110100

00000110100

00000110100

00000110100

Allows unique

(11:1)

 

 

 

 

identification of

 

 

 

 

 

SRAM vendor.

ID Register

1

1

1

1

Indicates the

Presence (0)

 

 

 

 

presence of an ID

 

 

 

 

 

register.

Scan Register Sizes

Register Name

Bit Size

Instruction

3

 

 

Bypass

1

 

 

ID

32

 

 

Boundary Scan

107

 

 

Instruction Codes

Instruction

Code

Description

EXTEST

000

Captures the input and output ring contents.

 

 

 

IDCODE

001

Loads the ID register with the vendor ID code and places the register between TDI and TDO.

 

 

This operation does not affect SRAM operation.

SAMPLE Z

010

Captures the input and output contents. Places the boundary scan register between TDI and

 

 

TDO. Forces all SRAM output drivers to a High-Z state.

RESERVED

011

Do not use: This instruction is reserved for future use.

 

 

 

SAMPLE/PRELOAD

100

Captures the input and output ring contents. Places the boundary scan register between TDI

 

 

and TDO. Does not affect the SRAM operation.

RESERVED

101

Do not use: This instruction is reserved for future use.

 

 

 

RESERVED

110

Do not use: This instruction is reserved for future use.

 

 

 

BYPASS

111

Places the bypass register between TDI and TDO. This operation does not affect SRAM

 

 

operation.

Document Number: 38-05621 Rev. *D

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Contents Configurations FeaturesFunctional Description Selection GuideLogic Block Diagram CY7C1916BV18 Logic Block Diagram CY7C1316BV18Doff CLKBWS Logic Block Diagram CY7C1318BV18Logic Block Diagram CY7C1320BV18 Ball Fbga 13 x 15 x 1.4 mm Pinout Pin ConfigurationCY7C1316BV18 2M x CY7C1916BV18 2M xCY7C1320BV18 512K x CY7C1318BV18 1M xSynchronous Read/Write Input. When Pin DefinitionsPin Name Pin Description Power Supply Inputs for the Outputs of the Device Power Supply Inputs to the Core of the DeviceReferenced with Respect to TDO for JtagFunctional Overview Programmable Impedance Application ExampleEcho Clocks SRAM#1 ZQOperation Write Cycle DescriptionsFirst Address External Second Address Internal CommentsWrite cycle description table for CY7C1320BV18 follows Write cycle description table for CY7C1916BV18 followsDevice Into the device. D359 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode State diagram for the TAP controller follows TAP Controller State DiagramTAP Electrical Characteristics TAP Controller Block DiagramTAP Timing and Test Conditions TAP AC Switching CharacteristicsScan Register Sizes Identification Register DefinitionsInstruction Codes Register Name Bit SizeBit # Bump ID Boundary Scan OrderDLL Constraints Power Up Sequence in DDR-II SramPower Up Sequence Maximum Ratings Electrical CharacteristicsDC Electrical Characteristics Input LOW Voltage Vref Document Number 38-05621 Rev. *D AC Electrical CharacteristicsInput High Voltage Vref + Thermal Resistance CapacitanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitParameter Min Max DLL Timing Parameter Min Max Output TimesDON’T Care Undefined Switching WaveformsOrdering Information 250 167 Ball Fbga 13 x 15 x 1.4 mm Package DiagramNXR SYTWorldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal InformationVKN/PYRS USB

CY7C1316BV18, CY7C1916BV18, CY7C1320BV18, CY7C1318BV18 specifications

The Cypress CY7C1318BV18, CY7C1320BV18, CY7C1916BV18, and CY7C1316BV18 are advanced synchronous static RAM (SRAM) devices designed to meet the high-performance requirements of modern computing systems. Offering a blend of high speed, low power consumption, and large storage capacities, these chips are widely utilized in applications such as networking equipment, telecommunications, and high-speed data processing.

The CY7C1318BV18 is a 2 Megabit SRAM that operates at a 2.5V supply voltage. It features a fast access time of 10ns, making it an excellent choice for systems that require rapid data retrieval. Its asynchronous interface simplifies integration into a wide range of devices. In terms of power efficiency, the CY7C1318BV18 has a low operating current, ensuring that it can be utilized in battery-powered applications without significantly draining power.

Similarly, the CY7C1320BV18 offers a larger 256 Kbit capacity while maintaining the same low-voltage operation and performance characteristics. This chip also features a synchronous interface, supporting high-speed data transfer rates that are ideal for networking and communication devices. The CY7C1320BV18's features include deep-write operation capabilities, enhancing its performance in write-intensive applications.

The CY7C1916BV18 takes performance a step further with its 32 Megabit capacity, suitable for applications requiring extensive memory resources. This device also supports advanced functions such as burst read modes, allowing for faster sequential data access. With its low-latency performance, the CY7C1916BV18 is an excellent choice for applications like digital signal processing and real-time data analysis.

Lastly, the CY7C1316BV18 is another variant offering 1 Megabit of storage. It combines high-speed functionality with low power usage, supporting a wide range of applications including consumer electronics and automotive systems. Its robust design ensures reliability under varying environmental conditions.

All of these SRAM devices incorporate Cypress’s advanced semiconductor technology, providing a combination of speed, efficiency, and reliability. They are available in various package options, which facilitate easy integration into diverse system designs. Overall, the Cypress CY7C1318BV18, CY7C1320BV18, CY7C1916BV18, and CY7C1316BV18 exemplify the company’s commitment to delivering high-quality memory solutions that cater to the evolving needs of the electronic industry.
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