Cypress CY7C1320BV18, CY7C1318BV18 manual AC Electrical Characteristics, Input High Voltage Vref +

Page 21

CY7C1316BV18, CY7C1916BV18

CY7C1318BV18, CY7C1320BV18

Electrical Characteristics (continued)

DC Electrical Characteristics

Over the Operating Range [12]

Parameter

Description

Test Conditions

 

Min

Typ

Max

Unit

IDD [19]

VDD Operating Supply

VDD = Max,

200 MHz

(x8)

 

 

575

mA

 

 

IOUT = 0 mA,

 

 

 

 

 

 

 

 

 

(x9)

 

 

580

 

 

 

f = fMAX = 1/tCYC

 

 

 

 

 

 

 

 

 

(x18)

 

 

600

 

 

 

 

 

 

 

 

 

 

 

 

(x36)

 

 

635

 

 

 

 

167 MHz

(x8)

 

 

490

mA

 

 

 

 

(x9)

 

 

490

 

 

 

 

 

(x18)

 

 

510

 

 

 

 

 

(x36)

 

 

540

 

ISB1

Automatic Power Down

Max VDD,

300 MHz

(x8)

 

 

315

mA

 

Current

Both Ports Deselected,

 

 

 

 

 

 

 

 

(x9)

 

 

315

 

 

 

VIN VIH or VIN VIL

 

 

 

 

 

 

 

(x18)

 

 

325

 

 

 

f = fMAX = 1/tCYC,

 

 

 

 

 

 

Inputs Static

 

(x36)

 

 

350

 

 

 

 

278 MHz

(x8)

 

 

305

mA

 

 

 

 

(x9)

 

 

305

 

 

 

 

 

(x18)

 

 

315

 

 

 

 

 

(x36)

 

 

330

 

 

 

 

250 MHz

(x8)

 

 

300

mA

 

 

 

 

(x9)

 

 

300

 

 

 

 

 

(x18)

 

 

300

 

 

 

 

 

(x36)

 

 

320

 

 

 

 

200 MHz

(x8)

 

 

285

mA

 

 

 

 

(x9)

 

 

285

 

 

 

 

 

(x18)

 

 

290

 

 

 

 

 

(x36)

 

 

300

 

 

 

 

167 MHz

(x8)

 

 

280

mA

 

 

 

 

(x9)

 

 

280

 

 

 

 

 

(x18)

 

 

285

 

 

 

 

 

(x36)

 

 

295

 

AC Electrical Characteristics

Over the Operating Range [11]

Parameter

Description

Test Conditions

Min

Typ

Max

Unit

VIH

Input HIGH Voltage

 

VREF + 0.2

V

VIL

Input LOW Voltage

 

VREF – 0.2

V

Document Number: 38-05621 Rev. *D

Page 21 of 31

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Contents Configurations FeaturesFunctional Description Selection GuideLogic Block Diagram CY7C1916BV18 Logic Block Diagram CY7C1316BV18Doff CLKLogic Block Diagram CY7C1318BV18 Logic Block Diagram CY7C1320BV18BWS Ball Fbga 13 x 15 x 1.4 mm Pinout Pin ConfigurationCY7C1316BV18 2M x CY7C1916BV18 2M xCY7C1320BV18 512K x CY7C1318BV18 1M xPin Definitions Pin Name Pin DescriptionSynchronous Read/Write Input. When Power Supply Inputs for the Outputs of the Device Power Supply Inputs to the Core of the DeviceReferenced with Respect to TDO for JtagFunctional Overview Programmable Impedance Application ExampleEcho Clocks SRAM#1 ZQOperation Write Cycle DescriptionsFirst Address External Second Address Internal CommentsWrite cycle description table for CY7C1320BV18 follows Write cycle description table for CY7C1916BV18 followsDevice Into the device. D359 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode State diagram for the TAP controller follows TAP Controller State DiagramTAP Electrical Characteristics TAP Controller Block DiagramTAP Timing and Test Conditions TAP AC Switching CharacteristicsScan Register Sizes Identification Register DefinitionsInstruction Codes Register Name Bit SizeBit # Bump ID Boundary Scan OrderPower Up Sequence in DDR-II Sram Power Up SequenceDLL Constraints Electrical Characteristics DC Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Input High Voltage Vref +Input LOW Voltage Vref Document Number 38-05621 Rev. *D Thermal Resistance CapacitanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitParameter Min Max DLL Timing Parameter Min Max Output TimesDON’T Care Undefined Switching WaveformsOrdering Information 250 167 Ball Fbga 13 x 15 x 1.4 mm Package DiagramNXR SYTWorldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal InformationVKN/PYRS USB

CY7C1316BV18, CY7C1916BV18, CY7C1320BV18, CY7C1318BV18 specifications

The Cypress CY7C1318BV18, CY7C1320BV18, CY7C1916BV18, and CY7C1316BV18 are advanced synchronous static RAM (SRAM) devices designed to meet the high-performance requirements of modern computing systems. Offering a blend of high speed, low power consumption, and large storage capacities, these chips are widely utilized in applications such as networking equipment, telecommunications, and high-speed data processing.

The CY7C1318BV18 is a 2 Megabit SRAM that operates at a 2.5V supply voltage. It features a fast access time of 10ns, making it an excellent choice for systems that require rapid data retrieval. Its asynchronous interface simplifies integration into a wide range of devices. In terms of power efficiency, the CY7C1318BV18 has a low operating current, ensuring that it can be utilized in battery-powered applications without significantly draining power.

Similarly, the CY7C1320BV18 offers a larger 256 Kbit capacity while maintaining the same low-voltage operation and performance characteristics. This chip also features a synchronous interface, supporting high-speed data transfer rates that are ideal for networking and communication devices. The CY7C1320BV18's features include deep-write operation capabilities, enhancing its performance in write-intensive applications.

The CY7C1916BV18 takes performance a step further with its 32 Megabit capacity, suitable for applications requiring extensive memory resources. This device also supports advanced functions such as burst read modes, allowing for faster sequential data access. With its low-latency performance, the CY7C1916BV18 is an excellent choice for applications like digital signal processing and real-time data analysis.

Lastly, the CY7C1316BV18 is another variant offering 1 Megabit of storage. It combines high-speed functionality with low power usage, supporting a wide range of applications including consumer electronics and automotive systems. Its robust design ensures reliability under varying environmental conditions.

All of these SRAM devices incorporate Cypress’s advanced semiconductor technology, providing a combination of speed, efficiency, and reliability. They are available in various package options, which facilitate easy integration into diverse system designs. Overall, the Cypress CY7C1318BV18, CY7C1320BV18, CY7C1916BV18, and CY7C1316BV18 exemplify the company’s commitment to delivering high-quality memory solutions that cater to the evolving needs of the electronic industry.