Cypress CY7C1316BV18 TAP Controller State Diagram, State diagram for the TAP controller follows

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CY7C1316BV18, CY7C1916BV18

CY7C1318BV18, CY7C1320BV18

TAP Controller State Diagram

The state diagram for the TAP controller follows. [9]

1

0

TEST-LOGIC RESET

0

TEST-LOGIC/ IDLE

1

 

1

1

SELECT

SELECT

 

DR-SCAN

 

IR-SCAN

 

0

 

0

 

1

 

1

CAPTURE-DR

 

CAPTURE-IR

 

0

 

0

 

SHIFT-DR

0

SHIFT-IR

0

1

 

1

 

EXIT1-DR

1

EXIT1-IR

1

 

 

0

 

0

 

PAUSE-DR

0

PAUSE-IR

0

1

 

1

 

0

 

0

 

EXIT2-DR

 

EXIT2-IR

 

1

 

1

 

UPDATE-DR

 

UPDATE-IR

 

1

 

1

 

0

 

0

 

Note

9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.

Document Number: 38-05621 Rev. *D

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Contents Functional Description FeaturesConfigurations Selection GuideDoff Logic Block Diagram CY7C1316BV18Logic Block Diagram CY7C1916BV18 CLKBWS Logic Block Diagram CY7C1318BV18Logic Block Diagram CY7C1320BV18 CY7C1316BV18 2M x Pin ConfigurationBall Fbga 13 x 15 x 1.4 mm Pinout CY7C1916BV18 2M xCY7C1318BV18 1M x CY7C1320BV18 512K xSynchronous Read/Write Input. When Pin DefinitionsPin Name Pin Description Referenced with Respect to Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TDO for JtagFunctional Overview Echo Clocks Application ExampleProgrammable Impedance SRAM#1 ZQFirst Address External Second Address Internal Write Cycle DescriptionsOperation CommentsDevice Write cycle description table for CY7C1916BV18 followsWrite cycle description table for CY7C1320BV18 follows Into the device. D359 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram State diagram for the TAP controller followsTAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsInstruction Codes Identification Register DefinitionsScan Register Sizes Register Name Bit SizeBoundary Scan Order Bit # Bump IDDLL Constraints Power Up Sequence in DDR-II SramPower Up Sequence Maximum Ratings Electrical CharacteristicsDC Electrical Characteristics Input LOW Voltage Vref Document Number 38-05621 Rev. *D AC Electrical CharacteristicsInput High Voltage Vref + Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance Parameter Description Test Conditions Fbga UnitParameter Min Max Parameter Min Max Output Times DLL TimingSwitching Waveforms DON’T Care UndefinedOrdering Information 250 167 Package Diagram Ball Fbga 13 x 15 x 1.4 mmSYT NXRVKN/PYRS Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions USB

CY7C1316BV18, CY7C1916BV18, CY7C1320BV18, CY7C1318BV18 specifications

The Cypress CY7C1318BV18, CY7C1320BV18, CY7C1916BV18, and CY7C1316BV18 are advanced synchronous static RAM (SRAM) devices designed to meet the high-performance requirements of modern computing systems. Offering a blend of high speed, low power consumption, and large storage capacities, these chips are widely utilized in applications such as networking equipment, telecommunications, and high-speed data processing.

The CY7C1318BV18 is a 2 Megabit SRAM that operates at a 2.5V supply voltage. It features a fast access time of 10ns, making it an excellent choice for systems that require rapid data retrieval. Its asynchronous interface simplifies integration into a wide range of devices. In terms of power efficiency, the CY7C1318BV18 has a low operating current, ensuring that it can be utilized in battery-powered applications without significantly draining power.

Similarly, the CY7C1320BV18 offers a larger 256 Kbit capacity while maintaining the same low-voltage operation and performance characteristics. This chip also features a synchronous interface, supporting high-speed data transfer rates that are ideal for networking and communication devices. The CY7C1320BV18's features include deep-write operation capabilities, enhancing its performance in write-intensive applications.

The CY7C1916BV18 takes performance a step further with its 32 Megabit capacity, suitable for applications requiring extensive memory resources. This device also supports advanced functions such as burst read modes, allowing for faster sequential data access. With its low-latency performance, the CY7C1916BV18 is an excellent choice for applications like digital signal processing and real-time data analysis.

Lastly, the CY7C1316BV18 is another variant offering 1 Megabit of storage. It combines high-speed functionality with low power usage, supporting a wide range of applications including consumer electronics and automotive systems. Its robust design ensures reliability under varying environmental conditions.

All of these SRAM devices incorporate Cypress’s advanced semiconductor technology, providing a combination of speed, efficiency, and reliability. They are available in various package options, which facilitate easy integration into diverse system designs. Overall, the Cypress CY7C1318BV18, CY7C1320BV18, CY7C1916BV18, and CY7C1316BV18 exemplify the company’s commitment to delivering high-quality memory solutions that cater to the evolving needs of the electronic industry.