Cypress CY7C1316BV18, CY7C1318BV18, CY7C1320BV18 manual Pin Definitions, Pin Name Pin Description

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CY7C1316BV18, CY7C1916BV18

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1318BV18, CY7C1320BV18

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Definitions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Name

IO

 

 

 

 

Pin Description

 

 

DQ[x:0]

Input Output-

Data Input Output Signals. Inputs are sampled on the rising edge of K and

 

clocks during valid write

 

K

 

 

 

 

 

 

 

 

Synchronous

operations. These pins drive out the requested data during a read operation. Valid data is driven out on

 

 

 

 

 

 

 

 

 

the rising edge of both the C and C clocks during read operations or K and K when in single clock mode.

 

 

 

 

 

 

 

 

 

When read access is deselected, Q[x:0] are automatically tri-stated.

 

 

 

 

 

 

 

 

 

CY7C1316BV18 DQ[7:0]

 

 

 

 

 

 

 

 

 

CY7C1916BV18 DQ[8:0]

 

 

 

 

 

 

 

 

 

CY7C1318BV18 DQ[17:0]

 

 

 

 

 

 

 

 

 

CY7C1320BV18 DQ[35:0]

 

 

 

 

 

 

 

 

Input-

Synchronous Load. This input is brought LOW when a bus cycle sequence is defined. This definition

 

 

LD

 

 

 

 

 

 

 

 

Synchronous

includes address and read/write direction. All transactions operate on a burst of 2 data.

 

 

 

 

 

 

 

0,

Input-

Nibble Write Select 0, 1 Active LOW (CY7C1316BV18 only). Sampled on the rising edge of the K

 

 

NWS

 

 

NWS1

Synchronous

and K clocks during write operations. Used to select which nibble is written into the device during the

 

 

 

 

 

 

 

 

 

current portion of the write operations. Nibbles not written remain unaltered.

 

 

 

 

 

 

 

 

 

NWS0 controls D[3:0] and NWS1 controls D[7:4].

 

 

 

 

 

 

 

 

 

All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write Select

 

 

 

 

 

 

 

 

 

ignores the corresponding nibble of data and it is not written into the device.

 

 

 

 

 

 

0,

Input-

Byte Write Select 0, 1, 2, and 3 Active LOW. Sampled on the rising edge of the K and

 

 

clocks during

 

 

BWS

K

 

 

BWS1,

Synchronous

write operations. Used to select which byte is written into the device during the current portion of the Write

 

 

BWS2,

 

operations. Bytes not written remain unaltered.

 

 

BWS3

 

CY7C1916BV18 BWS0

controls D[8:0]

 

 

 

 

 

 

 

 

 

CY7C1318BV18 BWS0

controls D[8:0] and

BWS

1 controls D

[17:9].

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1320BV18 BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18] and BWS3 controls

 

 

 

 

 

 

 

 

 

D[35:27].

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select

 

 

 

 

 

 

 

 

 

ignores the corresponding byte of data and it is not written into the device.

 

 

A, A0

Input-

Address Inputs. These address inputs are multiplexed for both read and write operations. Internally, the

 

 

 

 

 

 

 

 

Synchronous

device is organized as 2M x 8 (2 arrays each of 1M x 8) for CY7C1316BV18 and 2M x 9 (2 arrays each

 

 

 

 

 

 

 

 

 

of 1M x 9) for CY7C1916BV18, a single 1M x 18 array for CY7C1916BV18, and a single array of 512K x

 

 

 

 

 

 

 

 

 

36 for CY7C1318BV18.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1316BV18 – Because the least significant bit of the address internally is a ‘0’, only 20 external

 

 

 

 

 

 

 

 

 

address inputs are needed to access the entire memory array.

 

 

 

 

 

 

 

 

 

CY7C1916BV18 – Because the least significant bit of the address internally is a ‘0’, only 20 external

 

 

 

 

 

 

 

 

 

address inputs are needed to access the entire memory array.

 

 

 

 

 

 

 

 

 

CY7C1318BV18 – A0 is the input to the burst counter. These are incremented internally in a linear fashion.

 

 

 

 

 

 

 

 

 

20 address inputs are needed to access the entire memory array.

 

 

 

 

 

 

 

 

 

CY7C1320BV18 – A0 is the input to the burst counter. These are incremented internally in a linear fashion.

 

 

 

 

 

 

 

 

 

19 address inputs are needed to access the entire memory array. All the address inputs are ignored when

 

 

 

 

 

 

 

 

 

the appropriate port is deselected.

 

 

 

 

 

 

Input-

Synchronous Read/Write Input. When

 

is LOW, this input designates the access type (read when

 

 

R/W

LD

 

 

 

 

 

 

 

 

Synchronous

R/W is HIGH, write when R/W is LOW) for the loaded address. R/W must meet the setup and hold times

 

 

 

 

 

 

 

 

 

around the edge of K.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CInput Clock Positive Input Clock for Output Data. C is used in conjunction with C to clock out the read data from the device. C and C can be used together to deskew the flight times of various devices on the board back to the controller. See Application Example on page 9 for more information.

CInput Clock Negative Input Clock for Output Data. C is used in conjunction with C to clock out the read data from the device. C and C can be used together to deskew the flight times of various devices on the board back to the controller. See Application Example on page 9 for more information.

K

Input Clock Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device

 

and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising

 

edge of K.

KInput Clock Negative Input Clock Input. K is used to capture synchronous data being presented to the device and to drive out data through Q[x:0] when in single clock mode.

Document Number: 38-05621 Rev. *D

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Contents Functional Description FeaturesConfigurations Selection GuideDoff Logic Block Diagram CY7C1316BV18Logic Block Diagram CY7C1916BV18 CLKLogic Block Diagram CY7C1318BV18 Logic Block Diagram CY7C1320BV18BWS CY7C1316BV18 2M x Pin ConfigurationBall Fbga 13 x 15 x 1.4 mm Pinout CY7C1916BV18 2M xCY7C1318BV18 1M x CY7C1320BV18 512K xPin Definitions Pin Name Pin DescriptionSynchronous Read/Write Input. When Referenced with Respect to Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TDO for JtagFunctional Overview Echo Clocks Application ExampleProgrammable Impedance SRAM#1 ZQFirst Address External Second Address Internal Write Cycle DescriptionsOperation CommentsDevice Write cycle description table for CY7C1916BV18 followsWrite cycle description table for CY7C1320BV18 follows Into the device. D359 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram State diagram for the TAP controller followsTAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsInstruction Codes Identification Register DefinitionsScan Register Sizes Register Name Bit SizeBoundary Scan Order Bit # Bump IDPower Up Sequence in DDR-II Sram Power Up SequenceDLL Constraints Electrical Characteristics DC Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Input High Voltage Vref +Input LOW Voltage Vref Document Number 38-05621 Rev. *D Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance Parameter Description Test Conditions Fbga UnitParameter Min Max Parameter Min Max Output Times DLL TimingSwitching Waveforms DON’T Care UndefinedOrdering Information 250 167 Package Diagram Ball Fbga 13 x 15 x 1.4 mmSYT NXRVKN/PYRS Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions USB

CY7C1316BV18, CY7C1916BV18, CY7C1320BV18, CY7C1318BV18 specifications

The Cypress CY7C1318BV18, CY7C1320BV18, CY7C1916BV18, and CY7C1316BV18 are advanced synchronous static RAM (SRAM) devices designed to meet the high-performance requirements of modern computing systems. Offering a blend of high speed, low power consumption, and large storage capacities, these chips are widely utilized in applications such as networking equipment, telecommunications, and high-speed data processing.

The CY7C1318BV18 is a 2 Megabit SRAM that operates at a 2.5V supply voltage. It features a fast access time of 10ns, making it an excellent choice for systems that require rapid data retrieval. Its asynchronous interface simplifies integration into a wide range of devices. In terms of power efficiency, the CY7C1318BV18 has a low operating current, ensuring that it can be utilized in battery-powered applications without significantly draining power.

Similarly, the CY7C1320BV18 offers a larger 256 Kbit capacity while maintaining the same low-voltage operation and performance characteristics. This chip also features a synchronous interface, supporting high-speed data transfer rates that are ideal for networking and communication devices. The CY7C1320BV18's features include deep-write operation capabilities, enhancing its performance in write-intensive applications.

The CY7C1916BV18 takes performance a step further with its 32 Megabit capacity, suitable for applications requiring extensive memory resources. This device also supports advanced functions such as burst read modes, allowing for faster sequential data access. With its low-latency performance, the CY7C1916BV18 is an excellent choice for applications like digital signal processing and real-time data analysis.

Lastly, the CY7C1316BV18 is another variant offering 1 Megabit of storage. It combines high-speed functionality with low power usage, supporting a wide range of applications including consumer electronics and automotive systems. Its robust design ensures reliability under varying environmental conditions.

All of these SRAM devices incorporate Cypress’s advanced semiconductor technology, providing a combination of speed, efficiency, and reliability. They are available in various package options, which facilitate easy integration into diverse system designs. Overall, the Cypress CY7C1318BV18, CY7C1320BV18, CY7C1916BV18, and CY7C1316BV18 exemplify the company’s commitment to delivering high-quality memory solutions that cater to the evolving needs of the electronic industry.