Cypress CY7C1316BV18, CY7C1318BV18, CY7C1320BV18, CY7C1916BV18 Boundary Scan Order, Bit # Bump ID

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CY7C1316BV18, CY7C1916BV18

CY7C1318BV18, CY7C1320BV18

Boundary Scan Order

Bit #	Bump ID	Bit #	Bump ID	Bit #	Bump ID	Bit #	Bump ID
0	6R	27	11H	54	7B	81	3G

1	6P	28	10G	55	6B	82	2G

2	6N	29	9G	56	6A	83	1J

3	7P	30	11F	57	5B	84	2J

4	7N	31	11G	58	5A	85	3K

5	7R	32	9F	59	4A	86	3J

6	8R	33	10F	60	5C	87	2K

7	8P	34	11E	61	4B	88	1K

8	9R	35	10E	62	3A	89	2L

9	11P	36	10D	63	1H	90	3L

10	10P	37	9E	64	1A	91	1M

11	10N	38	10C	65	2B	92	1L

12	9P	39	11D	66	3B	93	3N

13	10M	40	9C	67	1C	94	3M

14	11N	41	9D	68	1B	95	1N

15	9M	42	11B	69	3D	96	2M

16	9N	43	11C	70	3C	97	3P

17	11L	44	9B	71	1D	98	2N

18	11M	45	10B	72	2C	99	2P

19	9L	46	11A	73	3E	100	1P

20	10L	47	Internal	74	2D	101	3R

21	11K	48	9A	75	2E	102	4R

22	10K	49	8B	76	1E	103	4P

23	9J	50	7C	77	2F	104	5P

24	9K	51	6C	78	3F	105	5N

25	10J	52	8A	79	1G	106	5R

26	11J	53	7A	80	1F

Document Number: 38-05621 Rev. *D

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Contents Functional Description FeaturesConfigurations Selection GuideDoff Logic Block Diagram CY7C1316BV18Logic Block Diagram CY7C1916BV18 CLKLogic Block Diagram CY7C1318BV18 Logic Block Diagram CY7C1320BV18BWS CY7C1316BV18 2M x Pin ConfigurationBall Fbga 13 x 15 x 1.4 mm Pinout CY7C1916BV18 2M xCY7C1318BV18 1M x CY7C1320BV18 512K xPin Definitions Pin Name Pin DescriptionSynchronous Read/Write Input. When Referenced with Respect to Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TDO for JtagFunctional Overview Echo Clocks Application ExampleProgrammable Impedance SRAM#1 ZQFirst Address External Second Address Internal Write Cycle DescriptionsOperation CommentsDevice Write cycle description table for CY7C1916BV18 followsWrite cycle description table for CY7C1320BV18 follows Into the device. D359 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram State diagram for the TAP controller followsTAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsInstruction Codes Identification Register DefinitionsScan Register Sizes Register Name Bit SizeBoundary Scan Order Bit # Bump IDPower Up Sequence in DDR-II Sram Power Up SequenceDLL Constraints Electrical Characteristics DC Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Input High Voltage Vref +Input LOW Voltage Vref Document Number 38-05621 Rev. *D Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance Parameter Description Test Conditions Fbga UnitParameter Min Max Parameter Min Max Output Times DLL TimingSwitching Waveforms DON’T Care UndefinedOrdering Information 250 167 Package Diagram Ball Fbga 13 x 15 x 1.4 mmSYT NXRVKN/PYRS Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions USB

CY7C1316BV18, CY7C1916BV18, CY7C1320BV18, CY7C1318BV18 specifications

The Cypress CY7C1318BV18, CY7C1320BV18, CY7C1916BV18, and CY7C1316BV18 are advanced synchronous static RAM (SRAM) devices designed to meet the high-performance requirements of modern computing systems. Offering a blend of high speed, low power consumption, and large storage capacities, these chips are widely utilized in applications such as networking equipment, telecommunications, and high-speed data processing.

The CY7C1318BV18 is a 2 Megabit SRAM that operates at a 2.5V supply voltage. It features a fast access time of 10ns, making it an excellent choice for systems that require rapid data retrieval. Its asynchronous interface simplifies integration into a wide range of devices. In terms of power efficiency, the CY7C1318BV18 has a low operating current, ensuring that it can be utilized in battery-powered applications without significantly draining power.

Similarly, the CY7C1320BV18 offers a larger 256 Kbit capacity while maintaining the same low-voltage operation and performance characteristics. This chip also features a synchronous interface, supporting high-speed data transfer rates that are ideal for networking and communication devices. The CY7C1320BV18's features include deep-write operation capabilities, enhancing its performance in write-intensive applications.

The CY7C1916BV18 takes performance a step further with its 32 Megabit capacity, suitable for applications requiring extensive memory resources. This device also supports advanced functions such as burst read modes, allowing for faster sequential data access. With its low-latency performance, the CY7C1916BV18 is an excellent choice for applications like digital signal processing and real-time data analysis.

Lastly, the CY7C1316BV18 is another variant offering 1 Megabit of storage. It combines high-speed functionality with low power usage, supporting a wide range of applications including consumer electronics and automotive systems. Its robust design ensures reliability under varying environmental conditions.

All of these SRAM devices incorporate Cypress’s advanced semiconductor technology, providing a combination of speed, efficiency, and reliability. They are available in various package options, which facilitate easy integration into diverse system designs. Overall, the Cypress CY7C1318BV18, CY7C1320BV18, CY7C1916BV18, and CY7C1316BV18 exemplify the company’s commitment to delivering high-quality memory solutions that cater to the evolving needs of the electronic industry.