Cypress CY7C1916BV18, CY7C1318BV18, CY7C1320BV18, CY7C1316BV18 manual Parameter Min Max

Page 23

CY7C1316BV18, CY7C1916BV18

CY7C1318BV18, CY7C1320BV18

Switching Characteristics

Over the Operating Range [20, 21]

 

Cypress

Consortium

 

 

 

 

Description

300 MHz

278 MHz

250 MHz

200 MHz

167 MHz

Unit

Parameter

Parameter

 

 

 

 

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t

POWER

 

V (Typical) to the First Access [22]

1

–

1

–

1

–

1

–

1

–

ms

 

 

DD

 

 

 

 

 

 

 

 

 

 

 

tCYC

tKHKH

K Clock and C Clock Cycle Time

3.30

8.4

3.60

8.4

4.0

8.4

5.0

8.4

6.0

8.4

ns

tKH

tKHKL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Clock (K/K

and C/C) HIGH

1.32

–

1.4

–

1.6

–

2.0

–

2.4

–

ns

tKL

tKLKH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Clock (K/K

and C/C) LOW

1.32

–

1.4

–

1.6

–

2.0

–

2.4

–

ns

tKHKH

tKHKH

K Clock Rise to

 

 

Clock Rise and C

1.49

–

1.6

–

1.8

–

2.2

–

2.7

–

ns

K

 

 

 

to C Rise (rising edge to rising edge)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tKHCH

tKHCH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

K/K

Clock Rise to C/C Clock Rise

0.00

1.45

0.00

1.55

0.00

1.8

0.00

2.2

0.00

2.7

ns

 

 

 

(rising edge to rising edge)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Setup Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tSA

tAVKH

Address Setup to K Clock Rise

0.4

–

0.4

–

0.5

–

0.6

–

0.7

–

ns

tSC

tIVKH

Control Setup to K Clock Rise

0.4

–

0.4

–

0.5

–

0.6

–

0.7

–

ns

 

 

 

(LD, R/W)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tSCDDR

tIVKH

Double Data Rate Control Setup to

0.3

–

0.3

–

0.35

–

0.4

–

0.5

–

ns

 

 

 

Clock (K/K) Rise

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(BWS0, BWS1,

BWS

2,

BWS

3)

 

 

 

 

 

 

 

 

 

 

 

tSD [23]

tDVKH

D[X:0] Setup to Clock (K and

 

 

 

0.3

–

0.3

–

0.35

–

0.4

–

0.5

–

ns

K) Rise

Hold Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tHA

tKHAX

Address Hold after K Clock Rise

0.4

–

0.4

–

0.5

–

0.6

–

0.7

–

ns

tHC

tKHIX

Control

Hold after K Clock Rise

0.4

–

0.4

–

0.5

–

0.6

–

0.7

–

ns

 

 

 

 

 

 

(LD, R/W)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tHCDDR

tKHIX

Double Data Rate Control Hold after

0.3

–

0.3

–

0.35

–

0.4

–

0.5

–

ns

 

 

 

Clock (K/K) Rise

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(BWS0, BWS1,

BWS

2,

BWS

3)

 

 

 

 

 

 

 

 

 

 

 

tHD

tKHDX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D[X:0] Hold after Clock (K/K)

Rise

0.3

–

0.3

–

0.35

–

0.4

–

0.5

–

ns

Notes

21.When a part with a maximum frequency above 167 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is being operated and outputs data with the output timings of that frequency range.

22.This part has an internal voltage regulator; tPOWER is the time that the power is supplied above VDD minimum initially before a read or write operation can be initiated.

23.For DQ2 data signal on CY7C1916BV18 device, tSD is 0.5 ns for 200 MHz, 250 MHz, 278 MHz, and 300 MHz frequencies.

Document Number: 38-05621 Rev. *D

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Contents Selection Guide FeaturesConfigurations Functional DescriptionCLK Logic Block Diagram CY7C1316BV18Logic Block Diagram CY7C1916BV18 DoffBWS Logic Block Diagram CY7C1318BV18Logic Block Diagram CY7C1320BV18 CY7C1916BV18 2M x Pin ConfigurationBall Fbga 13 x 15 x 1.4 mm Pinout CY7C1316BV18 2M xCY7C1320BV18 512K x CY7C1318BV18 1M xSynchronous Read/Write Input. When Pin DefinitionsPin Name Pin Description TDO for Jtag Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device Referenced with Respect toFunctional Overview SRAM#1 ZQ Application ExampleProgrammable Impedance Echo ClocksComments Write Cycle DescriptionsOperation First Address External Second Address InternalInto the device. D359 remains unaltered Write cycle description table for CY7C1916BV18 followsWrite cycle description table for CY7C1320BV18 follows DeviceIeee 1149.1 Serial Boundary Scan Jtag Idcode State diagram for the TAP controller follows TAP Controller State DiagramTAP Electrical Characteristics TAP Controller Block DiagramTAP Timing and Test Conditions TAP AC Switching CharacteristicsRegister Name Bit Size Identification Register DefinitionsScan Register Sizes Instruction CodesBit # Bump ID Boundary Scan OrderDLL Constraints Power Up Sequence in DDR-II SramPower Up Sequence Maximum Ratings Electrical CharacteristicsDC Electrical Characteristics Input LOW Voltage Vref Document Number 38-05621 Rev. *D AC Electrical CharacteristicsInput High Voltage Vref + Parameter Description Test Conditions Fbga Unit CapacitanceThermal Resistance Parameter Description Test Conditions Max UnitParameter Min Max DLL Timing Parameter Min Max Output TimesDON’T Care Undefined Switching WaveformsOrdering Information 250 167 Ball Fbga 13 x 15 x 1.4 mm Package DiagramNXR SYTUSB Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions VKN/PYRS

CY7C1316BV18, CY7C1916BV18, CY7C1320BV18, CY7C1318BV18 specifications

The Cypress CY7C1318BV18, CY7C1320BV18, CY7C1916BV18, and CY7C1316BV18 are advanced synchronous static RAM (SRAM) devices designed to meet the high-performance requirements of modern computing systems. Offering a blend of high speed, low power consumption, and large storage capacities, these chips are widely utilized in applications such as networking equipment, telecommunications, and high-speed data processing.

The CY7C1318BV18 is a 2 Megabit SRAM that operates at a 2.5V supply voltage. It features a fast access time of 10ns, making it an excellent choice for systems that require rapid data retrieval. Its asynchronous interface simplifies integration into a wide range of devices. In terms of power efficiency, the CY7C1318BV18 has a low operating current, ensuring that it can be utilized in battery-powered applications without significantly draining power.

Similarly, the CY7C1320BV18 offers a larger 256 Kbit capacity while maintaining the same low-voltage operation and performance characteristics. This chip also features a synchronous interface, supporting high-speed data transfer rates that are ideal for networking and communication devices. The CY7C1320BV18's features include deep-write operation capabilities, enhancing its performance in write-intensive applications.

The CY7C1916BV18 takes performance a step further with its 32 Megabit capacity, suitable for applications requiring extensive memory resources. This device also supports advanced functions such as burst read modes, allowing for faster sequential data access. With its low-latency performance, the CY7C1916BV18 is an excellent choice for applications like digital signal processing and real-time data analysis.

Lastly, the CY7C1316BV18 is another variant offering 1 Megabit of storage. It combines high-speed functionality with low power usage, supporting a wide range of applications including consumer electronics and automotive systems. Its robust design ensures reliability under varying environmental conditions.

All of these SRAM devices incorporate Cypress’s advanced semiconductor technology, providing a combination of speed, efficiency, and reliability. They are available in various package options, which facilitate easy integration into diverse system designs. Overall, the Cypress CY7C1318BV18, CY7C1320BV18, CY7C1916BV18, and CY7C1316BV18 exemplify the company’s commitment to delivering high-quality memory solutions that cater to the evolving needs of the electronic industry.
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