Cypress CY7C1305BV25 TAP Controller Block Diagram, Parameter Description Min Max Unit, Hold Times

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CY7C1305BV25

CY7C1307BV25

TAP Controller Block Diagram

TDI

 

 

 

 

 

 

0

 

 

 

 

 

 

Bypass Register

 

 

Selection

 

 

 

2

1

0

Selection

TDO

Circuitry

Instruction Register

 

 

Circuitry

 

 

 

 

 

 

31

30 29 .

.

2

1

0

 

 

 

Identification Register

 

 

 

106

. .

.

.

2

1

0

 

 

 

Boundary Scan Register

 

 

 

TCK TMS

TAP Controller

TAP Electrical Characteristics Over the Operating Range[12, 15, 17]

Parameter

Description

Test Conditions

Min.

Max.

Unit

VOH1

Output HIGH Voltage

IOH = −2.0 mA

1.7

 

V

VOH2

Output HIGH Voltage

IOH = −100 ∝A

2.1

 

V

VOL1

Output LOW Voltage

IOL = 2.0 mA

 

0.7

V

VOL2

Output LOW Voltage

IOL = 100 ∝A

 

0.2

V

VIH

Input HIGH Voltage

 

1.7

VDD + 0.3

V

VIL

Input LOW Voltage

 

–0.3

0.7

V

IX

Input and Output Load Current

GND ≤ VI ≤ VDDQ

−5

5

∝A

TAP AC Switching Characteristics Over the Operating Range [13, 14]

 

 

 

Parameter

Description

Min.

Max.

Unit

tTCYC

TCK Clock Cycle Time

50

 

ns

tTF

TCK Clock Frequency

 

20

MHz

tTH

TCK Clock HIGH

20

 

ns

tTL

TCK Clock LOW

20

 

ns

Set-up Times

 

 

 

 

tTMSS

TMS Set-up to TCK Clock Rise

10

 

ns

tTDIS

TDI Set-up to TCK Clock Rise

10

 

ns

tCS

Capture Set-up to TCK Rise

10

 

ns

Hold Times

 

 

 

 

 

 

 

 

 

tTMSH

TMS Hold after TCK Clock Rise

10

 

ns

tTDIH

TDI Hold after Clock Rise

10

 

ns

tCH

Capture Hold after Clock Rise

10

 

ns

Notes:

12.These characteristic pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics Table.

13.Parameters tCS and tCH refer to the set-up and hold time requirements of latching data from the boundary scan register.

14.Test conditions are specified using the load in TAP AC test conditions. tR/tF = 1 ns.

Document #: 38-05630 Rev. *A

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Contents Features ConfigurationsFunctional Description CY7C1305BV25 1M x CY7C1307BV25 512K xLogic Block Diagram CY7C1305BV25 Logic Block Diagram CY7C1307BV25Selection Guide CY7C1305BV25-167 UnitPin\Configuration Ball Fbga 13 x 15 x 1.4 mm Pinout CY7C1307BV25 512K xPin Definitions Introduction Application Example1 Write Cycle Descriptions CY7C1305BV25 2 OperationWrite Cycle Read CycleWrite Cycle Descriptions CY7C1307BV25 2 Are written into the deviceOperation Operation Document # 38-05630 Rev. *AIeee 1149.1 Serial Boundary Scan Jtag Sample Z TAP Controller State Diagram11 EXIT2-IR UPDATE-DR UPDATE-IRTAP Controller Block Diagram Parameter Description Test Conditions Min Max UnitParameter Description Min Max Unit Set-up TimesTAP Timing and Test Conditions14 Identification Register DefinitionsParameter Description Min Max Unit Output Times TCK Clock LOW to TDO ValidScan Register Sizes Instruction CodesRegister Name Bit Size Instruction Code DescriptionBoundary Scan Order Bit # Bump IDMaximum Ratings Operating RangeThermal Resistance22 Capacitance22 AC Test Loads and WaveformsParameter Description Test Conditions Max Unit Input Capacitance TA = 25C, f = 1 MHz VDD =Switching Characteristics Over the Operating Range23 Cycle TimeSwitching Waveforms27, 28 NOP Read WritePackage Diagram Ordering InformationCY7C1307BV25-167BZC CY7C1305BV25-167BZXC CY7C1307BV25-167BZI CY7C1305BV25-167BZXIIssue Date Orig. Description of Change Document HistorySYT NXR

CY7C1307BV25, CY7C1305BV25 specifications

Cypress Semiconductor, a leader in embedded memory solutions, includes the CY7C1305BV25 and CY7C1307BV25 in its family of high-performance synchronous dynamic random-access memory (SDRAM) devices. These memory chips are designed for applications that require high-speed data processing and low power consumption, making them ideal for communication systems, networking devices, and other consumer electronics.

The CY7C1305BV25 is a 512K x 16-bit synchronous SRAM, while the CY7C1307BV25 offers a larger capacity of 1M x 16-bit. Both chips operate at a maximum clock frequency of 166 MHz, ensuring rapid data transfer rates and efficient memory operation. This high-speed performance is crucial in applications where quick data retrieval and storage are imperative.

One of the standout features of these devices is their ability to support a wide range of operating voltages, typically from 2.5V to 3.3V. This versatility allows them to be integrated into systems with varying power requirements, enhancing their adaptability for different designs. Additionally, the chips offer a low standby power consumption level, contributing to energy efficiency in battery-operated devices.

Both the CY7C1305BV25 and CY7C1307BV25 utilize a synchronous interface, allowing for coordinated data transfer with the system clock. This synchronization minimizes latency and improves overall system performance. The use of advanced pipelining techniques enables these devices to process multiple read and write commands concurrently, further boosting throughput.

In terms of reliability and durability, Cypress ensures that these memory chips comply with stringent industry standards. They are designed to withstand a wide temperature range, making them suitable for operation in diverse environments. The robust design includes features that mitigate the risk of data corruption and enhance data integrity, which is a vital consideration in mission-critical applications.

Overall, the CY7C1305BV25 and CY7C1307BV25 represent Cypress Semiconductor's commitment to delivering high-quality, high-performance memory solutions that meet the demanding requirements of modern electronics. Their impressive features, combined with a focus on low power consumption and reliability, make them a preferred choice for engineers and developers aiming to create the next generation of innovative products.
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