Cypress CY7C1307BV25 manual Document History, Issue Date Orig. Description of Change, Syt, Nxr

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CY7C1305BV25

CY7C1307BV25

Document History Page

Document Title: CY7C1305BV25/CY7C1307BV25 18-Mbit Burst of Four Pipelined SRAM with QDR™ Architecture

Document Number: 38-05630

REV.

ECN NO.

Issue Date

Orig. of

Description of Change

Change

 

 

 

 

 

**

253049

See ECN

SYT

New Data Sheet

 

 

 

 

 

*A

436864

See ECN

NXR

Converted from Preliminary to Final.

 

 

 

 

Removed 133 MHz & 100 MHz from product offering.

 

 

 

 

Included industrial Operating Range.

 

 

 

 

Changed C/C Description in the Features Section & Pin Description Table.

 

 

 

 

Changed tTCYC from 100 ns to 50 ns, changed tTF from 10 MHz to 20 MHz

 

 

 

 

and changed tTH and tTL from 40 ns to 20 ns in TAP AC Switching

 

 

 

 

Characteristics table

 

 

 

 

Modified the ZQ pin definition as follows:

 

 

 

 

Alternately, this pin can be connected directly to VDDQ, which enables the

 

 

 

 

minimum impedance mode

 

 

 

 

Included Maximum Ratings for Supply Voltage on VDDQ Relative to GND

 

 

 

 

Changed the Maximum Ratings for DC Input Voltage from VDDQ to VDD.

 

 

 

 

Modified the Description of IX from Input Load current to Input Leakage

 

 

 

 

Current on page # 16.

 

 

 

 

Modified test condition in note# 16 from VDDQ < VDD to VDDQ ≤ VDD

 

 

 

 

Updated the Ordering Information table and replaced the Package Name

 

 

 

 

Column with Package Diagram.

Document #: 38-05630 Rev. *A

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Contents Configurations FeaturesFunctional Description CY7C1305BV25 1M x CY7C1307BV25 512K xLogic Block Diagram CY7C1307BV25 Logic Block Diagram CY7C1305BV25Selection Guide CY7C1305BV25-167 UnitCY7C1307BV25 512K x Pin\Configuration Ball Fbga 13 x 15 x 1.4 mm PinoutPin Definitions Introduction Application Example1 Operation Write Cycle Descriptions CY7C1305BV25 2Write Cycle Read CycleAre written into the device Write Cycle Descriptions CY7C1307BV25 2Operation Operation Document # 38-05630 Rev. *AIeee 1149.1 Serial Boundary Scan Jtag Sample Z EXIT2-IR UPDATE-DR UPDATE-IR TAP Controller State Diagram11Parameter Description Test Conditions Min Max Unit TAP Controller Block DiagramParameter Description Min Max Unit Set-up TimesIdentification Register Definitions TAP Timing and Test Conditions14Parameter Description Min Max Unit Output Times TCK Clock LOW to TDO ValidInstruction Codes Scan Register SizesRegister Name Bit Size Instruction Code DescriptionBit # Bump ID Boundary Scan OrderMaximum Ratings Operating RangeThermal Resistance22 AC Test Loads and Waveforms Capacitance22Parameter Description Test Conditions Max Unit Input Capacitance TA = 25C, f = 1 MHz VDD =Cycle Time Switching Characteristics Over the Operating Range23NOP Read Write Switching Waveforms27, 28Ordering Information Package DiagramCY7C1307BV25-167BZC CY7C1305BV25-167BZXC CY7C1307BV25-167BZI CY7C1305BV25-167BZXIDocument History Issue Date Orig. Description of ChangeSYT NXR

CY7C1307BV25, CY7C1305BV25 specifications

Cypress Semiconductor, a leader in embedded memory solutions, includes the CY7C1305BV25 and CY7C1307BV25 in its family of high-performance synchronous dynamic random-access memory (SDRAM) devices. These memory chips are designed for applications that require high-speed data processing and low power consumption, making them ideal for communication systems, networking devices, and other consumer electronics.

The CY7C1305BV25 is a 512K x 16-bit synchronous SRAM, while the CY7C1307BV25 offers a larger capacity of 1M x 16-bit. Both chips operate at a maximum clock frequency of 166 MHz, ensuring rapid data transfer rates and efficient memory operation. This high-speed performance is crucial in applications where quick data retrieval and storage are imperative.

One of the standout features of these devices is their ability to support a wide range of operating voltages, typically from 2.5V to 3.3V. This versatility allows them to be integrated into systems with varying power requirements, enhancing their adaptability for different designs. Additionally, the chips offer a low standby power consumption level, contributing to energy efficiency in battery-operated devices.

Both the CY7C1305BV25 and CY7C1307BV25 utilize a synchronous interface, allowing for coordinated data transfer with the system clock. This synchronization minimizes latency and improves overall system performance. The use of advanced pipelining techniques enables these devices to process multiple read and write commands concurrently, further boosting throughput.

In terms of reliability and durability, Cypress ensures that these memory chips comply with stringent industry standards. They are designed to withstand a wide temperature range, making them suitable for operation in diverse environments. The robust design includes features that mitigate the risk of data corruption and enhance data integrity, which is a vital consideration in mission-critical applications.

Overall, the CY7C1305BV25 and CY7C1307BV25 represent Cypress Semiconductor's commitment to delivering high-quality, high-performance memory solutions that meet the demanding requirements of modern electronics. Their impressive features, combined with a focus on low power consumption and reliability, make them a preferred choice for engineers and developers aiming to create the next generation of innovative products.
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