Cypress CY7C1307BV25, CY7C1305BV25 manual Capacitance22, AC Test Loads and Waveforms

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CY7C1305BV25

CY7C1307BV25

Capacitance[22]

Parameter

Description

Test Conditions

Max.

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz,

5

pF

 

 

VDD = 2.5V.

 

 

CCLK

Clock Input Capacitance

6

pF

 

 

VDDQ = 1.5V

 

 

CO

Output Capacitance

7

pF

 

AC Test Loads and Waveforms

VREF

 

 

 

 

 

 

 

0.75V

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

Z0 = 50Ω

 

 

 

 

 

 

 

 

 

 

 

 

Device

 

 

 

 

 

 

 

 

 

Under

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Test

 

 

 

 

 

 

 

 

 

 

 

 

 

ZQ

RQ =

250Ω

(a)

RL = 50Ω

VREF = 0.75V

 

 

 

 

 

 

VREF = 0.75V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VREF

 

 

 

 

0.75V

 

 

 

R = 50Ω

[23]

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

ALL INPUT PULSES

 

 

 

 

 

 

 

 

 

1.25V

 

 

 

 

 

 

 

 

 

 

 

Device

 

 

 

 

 

 

 

 

 

 

5 pF 0.25V

 

 

 

0.75V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Under

ZQ

 

 

 

 

 

 

 

 

 

 

Slew Rate = 2 V/ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Test

 

 

 

RQ =

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

250Ω

(b)

Document #: 38-05630 Rev. *A

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Contents Configurations FeaturesFunctional Description CY7C1305BV25 1M x CY7C1307BV25 512K xLogic Block Diagram CY7C1307BV25 Logic Block Diagram CY7C1305BV25Selection Guide CY7C1305BV25-167 UnitCY7C1307BV25 512K x Pin\Configuration Ball Fbga 13 x 15 x 1.4 mm PinoutPin Definitions Introduction Application Example1 Operation Write Cycle Descriptions CY7C1305BV25 2Write Cycle Read CycleAre written into the device Write Cycle Descriptions CY7C1307BV25 2Operation Operation Document # 38-05630 Rev. *AIeee 1149.1 Serial Boundary Scan Jtag Sample Z EXIT2-IR UPDATE-DR UPDATE-IR TAP Controller State Diagram11Parameter Description Test Conditions Min Max Unit TAP Controller Block DiagramParameter Description Min Max Unit Set-up TimesIdentification Register Definitions TAP Timing and Test Conditions14Parameter Description Min Max Unit Output Times TCK Clock LOW to TDO ValidInstruction Codes Scan Register SizesRegister Name Bit Size Instruction Code DescriptionBit # Bump ID Boundary Scan OrderThermal Resistance22 Maximum RatingsOperating Range AC Test Loads and Waveforms Capacitance22Parameter Description Test Conditions Max Unit Input Capacitance TA = 25C, f = 1 MHz VDD =Cycle Time Switching Characteristics Over the Operating Range23NOP Read Write Switching Waveforms27, 28Ordering Information Package DiagramCY7C1307BV25-167BZC CY7C1305BV25-167BZXC CY7C1307BV25-167BZI CY7C1305BV25-167BZXIDocument History Issue Date Orig. Description of ChangeSYT NXR

CY7C1307BV25, CY7C1305BV25 specifications

Cypress Semiconductor, a leader in embedded memory solutions, includes the CY7C1305BV25 and CY7C1307BV25 in its family of high-performance synchronous dynamic random-access memory (SDRAM) devices. These memory chips are designed for applications that require high-speed data processing and low power consumption, making them ideal for communication systems, networking devices, and other consumer electronics.

The CY7C1305BV25 is a 512K x 16-bit synchronous SRAM, while the CY7C1307BV25 offers a larger capacity of 1M x 16-bit. Both chips operate at a maximum clock frequency of 166 MHz, ensuring rapid data transfer rates and efficient memory operation. This high-speed performance is crucial in applications where quick data retrieval and storage are imperative.

One of the standout features of these devices is their ability to support a wide range of operating voltages, typically from 2.5V to 3.3V. This versatility allows them to be integrated into systems with varying power requirements, enhancing their adaptability for different designs. Additionally, the chips offer a low standby power consumption level, contributing to energy efficiency in battery-operated devices.

Both the CY7C1305BV25 and CY7C1307BV25 utilize a synchronous interface, allowing for coordinated data transfer with the system clock. This synchronization minimizes latency and improves overall system performance. The use of advanced pipelining techniques enables these devices to process multiple read and write commands concurrently, further boosting throughput.

In terms of reliability and durability, Cypress ensures that these memory chips comply with stringent industry standards. They are designed to withstand a wide temperature range, making them suitable for operation in diverse environments. The robust design includes features that mitigate the risk of data corruption and enhance data integrity, which is a vital consideration in mission-critical applications.

Overall, the CY7C1305BV25 and CY7C1307BV25 represent Cypress Semiconductor's commitment to delivering high-quality, high-performance memory solutions that meet the demanding requirements of modern electronics. Their impressive features, combined with a focus on low power consumption and reliability, make them a preferred choice for engineers and developers aiming to create the next generation of innovative products.
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