Cypress CY7C1307BV25 manual TAP Timing and Test Conditions14, Identification Register Definitions

Page 13

CY7C1305BV25

CY7C1307BV25

TAP AC Switching Characteristics Over the Operating Range (continued)[13, 14]

Parameter

Description

Min.

Max.

Unit

Output Times

 

 

 

 

tTDOV

TCK Clock LOW to TDO Valid

 

20

ns

tTDOX

TCK Clock LOW to TDO Invalid

0

 

ns

TAP Timing and Test Conditions[14]

 

 

 

1.25V

 

 

 

 

 

 

 

 

 

50Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TDO

 

 

 

 

 

 

 

 

 

Z0

=50Ω

 

 

 

 

 

 

CL = 20 pF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(a) GND

Test Clock

TCK

Test Mode Select

TMS

Test Data-In

TDI

tTMSS

tTDIS

0V

tTH

ALL INPUT PULSES

2.5V

1.25V

tTL

tTCYC

tTMSH

tTDIH

Test Data-Out

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TDO

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Identification Register Definitions

 

 

tTDOX

tTDOV

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Value

 

 

 

 

 

 

 

Instruction Field

CY7C1305BV25

CY7C1307BV25

 

 

 

 

Description

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Revision Number (31:29)

000

 

000

 

 

Version number.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Cypress Device ID (28:12)

01011010011010101

01011010011100101

Defines the type of SRAM.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Cypress JEDEC ID (11:1)

00000110100

00000110100

 

 

Allows unique identification of SRAM vendor.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ID Register Presence (0)

1

 

1

 

 

Indicate the presence of an ID register.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Document #: 38-05630 Rev. *A

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Contents Configurations FeaturesFunctional Description CY7C1305BV25 1M x CY7C1307BV25 512K xLogic Block Diagram CY7C1307BV25 Logic Block Diagram CY7C1305BV25Selection Guide CY7C1305BV25-167 UnitCY7C1307BV25 512K x Pin\Configuration Ball Fbga 13 x 15 x 1.4 mm PinoutPin Definitions Introduction Application Example1 Operation Write Cycle Descriptions CY7C1305BV25 2Write Cycle Read CycleAre written into the device Write Cycle Descriptions CY7C1307BV25 2Operation Operation Document # 38-05630 Rev. *AIeee 1149.1 Serial Boundary Scan Jtag Sample Z EXIT2-IR UPDATE-DR UPDATE-IR TAP Controller State Diagram11Parameter Description Test Conditions Min Max Unit TAP Controller Block DiagramParameter Description Min Max Unit Set-up TimesIdentification Register Definitions TAP Timing and Test Conditions14Parameter Description Min Max Unit Output Times TCK Clock LOW to TDO ValidInstruction Codes Scan Register SizesRegister Name Bit Size Instruction Code DescriptionBit # Bump ID Boundary Scan OrderOperating Range Maximum RatingsThermal Resistance22 AC Test Loads and Waveforms Capacitance22Parameter Description Test Conditions Max Unit Input Capacitance TA = 25C, f = 1 MHz VDD =Cycle Time Switching Characteristics Over the Operating Range23NOP Read Write Switching Waveforms27, 28Ordering Information Package DiagramCY7C1307BV25-167BZC CY7C1305BV25-167BZXC CY7C1307BV25-167BZI CY7C1305BV25-167BZXIDocument History Issue Date Orig. Description of ChangeSYT NXR

CY7C1307BV25, CY7C1305BV25 specifications

Cypress Semiconductor, a leader in embedded memory solutions, includes the CY7C1305BV25 and CY7C1307BV25 in its family of high-performance synchronous dynamic random-access memory (SDRAM) devices. These memory chips are designed for applications that require high-speed data processing and low power consumption, making them ideal for communication systems, networking devices, and other consumer electronics.

The CY7C1305BV25 is a 512K x 16-bit synchronous SRAM, while the CY7C1307BV25 offers a larger capacity of 1M x 16-bit. Both chips operate at a maximum clock frequency of 166 MHz, ensuring rapid data transfer rates and efficient memory operation. This high-speed performance is crucial in applications where quick data retrieval and storage are imperative.

One of the standout features of these devices is their ability to support a wide range of operating voltages, typically from 2.5V to 3.3V. This versatility allows them to be integrated into systems with varying power requirements, enhancing their adaptability for different designs. Additionally, the chips offer a low standby power consumption level, contributing to energy efficiency in battery-operated devices.

Both the CY7C1305BV25 and CY7C1307BV25 utilize a synchronous interface, allowing for coordinated data transfer with the system clock. This synchronization minimizes latency and improves overall system performance. The use of advanced pipelining techniques enables these devices to process multiple read and write commands concurrently, further boosting throughput.

In terms of reliability and durability, Cypress ensures that these memory chips comply with stringent industry standards. They are designed to withstand a wide temperature range, making them suitable for operation in diverse environments. The robust design includes features that mitigate the risk of data corruption and enhance data integrity, which is a vital consideration in mission-critical applications.

Overall, the CY7C1305BV25 and CY7C1307BV25 represent Cypress Semiconductor's commitment to delivering high-quality, high-performance memory solutions that meet the demanding requirements of modern electronics. Their impressive features, combined with a focus on low power consumption and reliability, make them a preferred choice for engineers and developers aiming to create the next generation of innovative products.
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