Cypress CY7C1307BV25, CY7C1305BV25 manual Boundary Scan Order, Bit # Bump ID

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CY7C1305BV25

CY7C1307BV25

Boundary Scan Order

Bit #	Bump ID	Bit #	Bump ID	Bit #	Bump ID	Bit #	Bump ID
0	6R	27	11H	54	7B	81	3G

1	6P	28	10G	55	6B	82	2G

2	6N	29	9G	56	6A	83	1J

3	7P	30	11F	57	5B	84	2J

4	7N	31	11G	58	5A	85	3K

5	7R	32	9F	59	4A	86	3J

6	8R	33	10F	60	5C	87	2K

7	8P	34	11E	61	4B	88	1K

8	9R	35	10E	62	3A	89	2L

9	11P	36	10D	63	1H	90	3L

10	10P	37	9E	64	1A	91	1M

11	10N	38	10C	65	2B	92	1L

12	9P	39	11D	66	3B	93	3N

13	10M	40	9C	67	1C	94	3M

14	11N	41	9D	68	1B	95	1N

15	9M	42	11B	69	3D	96	2M

16	9N	43	11C	70	3C	97	3P

17	11L	44	9B	71	1D	98	2N

18	11M	45	10B	72	2C	99	2P

19	9L	46	11A	73	3E	100	1P

20	10L	47	Internal	74	2D	101	3R

21	11K	48	9A	75	2E	102	4R

22	10K	49	8B	76	1E	103	4P

23	9J	50	7C	77	2F	104	5P

24	9K	51	6C	78	3F	105	5N

25	10J	52	8A	79	1G	106	5R

26	11J	53	7A	80	1F

Document #: 38-05630 Rev. *A

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Contents CY7C1305BV25 1M x CY7C1307BV25 512K x FeaturesConfigurations Functional DescriptionCY7C1305BV25-167 Unit Logic Block Diagram CY7C1305BV25Logic Block Diagram CY7C1307BV25 Selection GuideCY7C1307BV25 512K x Pin\Configuration Ball Fbga 13 x 15 x 1.4 mm PinoutPin Definitions Introduction Application Example1 Read Cycle Write Cycle Descriptions CY7C1305BV25 2Operation Write CycleOperation Document # 38-05630 Rev. *A Write Cycle Descriptions CY7C1307BV25 2Are written into the device OperationIeee 1149.1 Serial Boundary Scan Jtag Sample Z EXIT2-IR UPDATE-DR UPDATE-IR TAP Controller State Diagram11Set-up Times TAP Controller Block DiagramParameter Description Test Conditions Min Max Unit Parameter Description Min Max UnitTCK Clock LOW to TDO Valid TAP Timing and Test Conditions14Identification Register Definitions Parameter Description Min Max Unit Output TimesInstruction Code Description Scan Register SizesInstruction Codes Register Name Bit SizeBit # Bump ID Boundary Scan OrderMaximum Ratings Operating RangeThermal Resistance22 Input Capacitance TA = 25C, f = 1 MHz VDD = Capacitance22AC Test Loads and Waveforms Parameter Description Test Conditions Max UnitCycle Time Switching Characteristics Over the Operating Range23NOP Read Write Switching Waveforms27, 28CY7C1307BV25-167BZI CY7C1305BV25-167BZXI Package DiagramOrdering Information CY7C1307BV25-167BZC CY7C1305BV25-167BZXCNXR Issue Date Orig. Description of ChangeDocument History SYT

CY7C1307BV25, CY7C1305BV25 specifications

Cypress Semiconductor, a leader in embedded memory solutions, includes the CY7C1305BV25 and CY7C1307BV25 in its family of high-performance synchronous dynamic random-access memory (SDRAM) devices. These memory chips are designed for applications that require high-speed data processing and low power consumption, making them ideal for communication systems, networking devices, and other consumer electronics.

The CY7C1305BV25 is a 512K x 16-bit synchronous SRAM, while the CY7C1307BV25 offers a larger capacity of 1M x 16-bit. Both chips operate at a maximum clock frequency of 166 MHz, ensuring rapid data transfer rates and efficient memory operation. This high-speed performance is crucial in applications where quick data retrieval and storage are imperative.

One of the standout features of these devices is their ability to support a wide range of operating voltages, typically from 2.5V to 3.3V. This versatility allows them to be integrated into systems with varying power requirements, enhancing their adaptability for different designs. Additionally, the chips offer a low standby power consumption level, contributing to energy efficiency in battery-operated devices.

Both the CY7C1305BV25 and CY7C1307BV25 utilize a synchronous interface, allowing for coordinated data transfer with the system clock. This synchronization minimizes latency and improves overall system performance. The use of advanced pipelining techniques enables these devices to process multiple read and write commands concurrently, further boosting throughput.

In terms of reliability and durability, Cypress ensures that these memory chips comply with stringent industry standards. They are designed to withstand a wide temperature range, making them suitable for operation in diverse environments. The robust design includes features that mitigate the risk of data corruption and enhance data integrity, which is a vital consideration in mission-critical applications.

Overall, the CY7C1305BV25 and CY7C1307BV25 represent Cypress Semiconductor's commitment to delivering high-quality, high-performance memory solutions that meet the demanding requirements of modern electronics. Their impressive features, combined with a focus on low power consumption and reliability, make them a preferred choice for engineers and developers aiming to create the next generation of innovative products.