Cypress CY7C1381FV25 manual Features, Selection Guide Functional Description, MHz 100 MHz Unit

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CY7C1381DV25, CY7C1381FV25

CY7C1383DV25, CY7C1383FV25

18-Mbit (512K x 36/1M x 18) Flow-Through SRAM

Features

•Supports 133 MHz bus operations

•512K x 36/1M x 18 common IO

•2.5V core power supply (VDD)

•2.5V IO supply (VDDQ)

•Fast clock-to-output times, 6.5 ns (133 MHz version)

•Provides high-performance 2-1-1-1 access rate

•User selectable burst counter supporting Intel→ Pentium→ interleaved or linear burst sequences

•Separate processor and controller address strobes

•Synchronous self timed write

•Asynchronous output enable

•CY7C1381DV25/CY7C1383DV25 available in JEDEC-standard Pb-free 100-pin TQFP, Pb-free and non Pb-free 165-ball FBGA package. CY7C1381FV25/CY7C1383FV25 available in Pb-free and non Pb-free 119-ball BGA package

•IEEE 1149.1 JTAG-Compatible Boundary Scan

•ZZ sleep mode option

Selection Guide

Functional Description [1]

The CY7C1381DV25/CY7C1383DV25/CY7C1381FV25/ CY7C1383FV25 is a 2.5V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access. All synchronous inputs are gated by registers controlled by a positive edge triggered clock input (CLK). The synchronous inputs include all addresses, all data inputs, address pipelining chip enable (CE1), depth expansion chip enables (CE2 and CE3 [2]), burst control inputs (ADSC, ADSP, and ADV), write enables (BWx, and BWE), and global

write (GW). Asynchronous inputs include the output enable (OE) and the ZZ pin.

The CY7C1381DV25/CY7C1383DV25/CY7C1381FV25/ CY7C1383FV25 allows interleaved or linear burst sequences, selected by the MODE input pin. A HIGH selects an interleaved burst sequence, while a LOW selects a linear burst sequence. Burst accesses can be initiated with the processor address strobe (ADSP) or the cache controller address strobe (ADSC) inputs. Address advancement is controlled by the address advancement (ADV) input.

Addresses and chip enables are registered at rising edge of clock when either address strobe processor (ADSP) or address strobe controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the advance pin (ADV).

The CY7C1381DV25/CY7C1383DV25/CY7C1381FV25/ CY7C1383FV25 operates from a +2.5V core power supply while all outputs also operate with a +2.5 supply. All inputs and outputs are JEDEC-standard and JESD8-5-compatible.

 

133 MHz

100 MHz

Unit

Maximum Access Time

6.5

8.5

ns

 

 

 

 

Maximum Operating Current

210

175

mA

 

 

 

 

Maximum CMOS Standby Current

70

70

mA

 

 

 

 

Notes

1.For best practices or recommendations, please refer to the Cypress application note AN1064, SRAM System Design Guidelines on www.cypress.com.

2.CE3, CE2 are for TQFP and 165 FBGA package only. 119 BGA is offered only in 1 chip enable.

Cypress Semiconductor Corporation

•

198 Champion Court • San Jose, CA 95134-1709

•

408-943-2600

Document #: 38-05547 Rev. *E

 

Revised Feburary 14, 2007

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Contents Selection Guide Functional Description Features133 MHz 100 MHz Unit Cypress Semiconductor CorporationLogic Block Diagram CY7C1383DV25/CY7C1383FV25 3 1M x Logic Block Diagram CY7C1381DV25/CY7C1381FV25 3 512K xCY7C1381DV25 512K x Pin Configurations Pin Tqfp Pinout 3 Chip EnableCY7C1383DV25 Mbit x Pin Configurations Ball BGA Pinout Pin Configurations Ball Fbga Pinout3 Chip Enable Name Description Pin DefinitionsByte write select inputs, active LOW. Qualified with Functional Overview ZZ Mode Electrical Characteristics Interleaved Burst Address Table Mode = Floating or VDDAddress = GNDUsed Address Cycle DescriptionFunction CY7C1381DV25/CY7C1381FV25 Truth Table for Read/Write 4DQPB, Dqpa DQPC, DqpaTAP Controller Block Diagram TAP Controller State DiagramIeee 1149.1 Serial Boundary Scan Jtag TAP Instruction Set Bypass RegisterTAP Timing TAP AC Switching Characteristics5V TAP AC Output Load Equivalent 5V TAP AC Test ConditionsIdentification Register Definitions Scan Register SizesBall BGA Boundary Scan Order 13 Identification CodesInstruction Code Description Bit # Ball IDA11 Maximum Ratings Electrical CharacteristicsOperating Range RangeThermal Resistance CapacitanceAC Test Loads and Waveforms PackageParameter Description 133 MHz 100 MHz Unit Min Switching CharacteristicsMin Max Read Cycle Timing Timing DiagramsAdsc Write Cycle Timing 25ADV Read/Write Cycle Timing 25, 27DON’T Care ZZ Mode Timing 29Ordering Information Pin Thin Plastic Quad Flat pack 14 x 20 x 1.4 mm Package DiagramsBall BGA 14 x 22 x 2.4 mm Soldernotespad Type NON-SOLDER Mask Defined Nsmd Document History Issue Date Orig. Description of Change

CY7C1383DV25, CY7C1381FV25, CY7C1381DV25, CY7C1383FV25 specifications

Cypress Semiconductor's family of static random-access memory (SRAM) chips, including the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25, are designed for high-performance applications that require fast access times and low power consumption. These devices are often found in applications such as networking, telecommunications, and industrial control systems, where speed and reliability are paramount.

The CY7C1381FV25 and CY7C1381DV25 are single-port SRAMs, while the CY7C1383FV25 and CY7C1383DV25 are dual-port versions that allow for simultaneous read and write operations from two different controllers. This feature significantly enhances data throughput, making these devices ideal for high-bandwidth applications. The devices support asynchronous read and write operations, ensuring immediate data accessibility with minimal latency.

One of the key features of these SRAM chips is their fast access times, with read and write cycles as short as 10 nanoseconds. This speed makes them suitable for cache memory applications, where performance is critical. Furthermore, the devices are built on Cypress's advanced process technology, which enables them to achieve high density and low power consumption, ideal for battery-operated devices and systems where energy efficiency is crucial.

The power consumption characteristics also highlight their effectiveness in various applications. The active power consumption can be as low as 80mA, depending on the operation conditions, and the devices offer low standby power, further enhancing their suitability for low-power applications. Additionally, these chips incorporate power-saving features like sleep mode, allowing designers to minimize energy consumption in idle states.

In terms of reliability, Cypress employs rigorous quality control measures, ensuring that the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25 meet stringent industry standards. They also feature an extended temperature range, which is vital for industrial applications that may experience harsh environmental conditions.

Overall, the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25 SRAM chips are versatile, high-performance memory solutions. Their combination of fast access times, low power consumption, and reliability makes them an excellent choice for engineers and developers looking to implement high-speed memory in a variety of applications. Whether for a communication device or a sophisticated industrial control system, these Cypress SRAMs stand out in the market for their performance and efficiency.
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