Cypress CY7C1383DV25, CY7C1381FV25, CY7C1381DV25, CY7C1383FV25 Timing Diagrams, Read Cycle Timing

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CY7C1381DV25, CY7C1381FV25

CY7C1383DV25, CY7C1383FV25

Timing Diagrams

Read Cycle Timing [25]

tCYC

CLK

t CH

tADS tADH

t CL

ADSP

tADS tADH

ADSC

tAS tAH

ADDRESS

GW, BWE,BW

X

CE

A1

A2

t WES

t WEH

tCES t CEH

Deselect Cycle

 

 

t ADVS t ADVH

ADV

 

 

OE

 

 

 

 

tOEV

 

 

tOEHZ

 

 

tCLZ

Data Out (Q)

High-Z

Q(A1)

tCDV

Single READ

ADV suspends burst

t

tCDV

 

OELZ

 

tCHZ

 

tDOH

Q(A2)

Q(A2 + 1)

Q(A2 + 2)

Q(A2 + 3)

Q(A2)

Q(A2 + 1)

Q(A2 + 2)

 

 

 

 

Burst wraps around

 

 

 

BURST

 

to its initial state

 

 

 

 

 

 

 

 

 

READ

 

 

 

 

 

DON’T CARE

UNDEFINED

 

 

 

 

Note

25. On this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH: CE1 is HIGH or CE2 is LOW or CE3 is HIGH.

Document #: 38-05547 Rev. *E

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Contents Features Selection Guide Functional Description133 MHz 100 MHz Unit Cypress Semiconductor CorporationLogic Block Diagram CY7C1381DV25/CY7C1381FV25 3 512K x Logic Block Diagram CY7C1383DV25/CY7C1383FV25 3 1M xCY7C1383DV25 Mbit x Pin Configurations Pin Tqfp Pinout 3 Chip EnableCY7C1381DV25 512K x Pin Configurations Ball BGA Pinout Pin Configurations Ball Fbga Pinout3 Chip Enable Byte write select inputs, active LOW. Qualified with Pin DefinitionsName Description Functional Overview Interleaved Burst Address Table Mode = Floating or VDD ZZ Mode Electrical CharacteristicsAddress = GNDAddress Cycle Description UsedTruth Table for Read/Write 4 Function CY7C1381DV25/CY7C1381FV25DQPB, Dqpa DQPC, DqpaIeee 1149.1 Serial Boundary Scan Jtag TAP Controller State DiagramTAP Controller Block Diagram Bypass Register TAP Instruction SetTAP AC Switching Characteristics TAP Timing5V TAP AC Test Conditions 5V TAP AC Output Load EquivalentIdentification Register Definitions Scan Register SizesIdentification Codes Ball BGA Boundary Scan Order 13Instruction Code Description Bit # Ball IDA11 Electrical Characteristics Maximum RatingsOperating Range RangeCapacitance Thermal ResistanceAC Test Loads and Waveforms PackageMin Max Switching CharacteristicsParameter Description 133 MHz 100 MHz Unit Min Timing Diagrams Read Cycle TimingWrite Cycle Timing 25 AdscRead/Write Cycle Timing 25, 27 ADVZZ Mode Timing 29 DON’T CareOrdering Information Package Diagrams Pin Thin Plastic Quad Flat pack 14 x 20 x 1.4 mmBall BGA 14 x 22 x 2.4 mm Soldernotespad Type NON-SOLDER Mask Defined Nsmd Issue Date Orig. Description of Change Document History

CY7C1383DV25, CY7C1381FV25, CY7C1381DV25, CY7C1383FV25 specifications

Cypress Semiconductor's family of static random-access memory (SRAM) chips, including the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25, are designed for high-performance applications that require fast access times and low power consumption. These devices are often found in applications such as networking, telecommunications, and industrial control systems, where speed and reliability are paramount.

The CY7C1381FV25 and CY7C1381DV25 are single-port SRAMs, while the CY7C1383FV25 and CY7C1383DV25 are dual-port versions that allow for simultaneous read and write operations from two different controllers. This feature significantly enhances data throughput, making these devices ideal for high-bandwidth applications. The devices support asynchronous read and write operations, ensuring immediate data accessibility with minimal latency.

One of the key features of these SRAM chips is their fast access times, with read and write cycles as short as 10 nanoseconds. This speed makes them suitable for cache memory applications, where performance is critical. Furthermore, the devices are built on Cypress's advanced process technology, which enables them to achieve high density and low power consumption, ideal for battery-operated devices and systems where energy efficiency is crucial.

The power consumption characteristics also highlight their effectiveness in various applications. The active power consumption can be as low as 80mA, depending on the operation conditions, and the devices offer low standby power, further enhancing their suitability for low-power applications. Additionally, these chips incorporate power-saving features like sleep mode, allowing designers to minimize energy consumption in idle states.

In terms of reliability, Cypress employs rigorous quality control measures, ensuring that the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25 meet stringent industry standards. They also feature an extended temperature range, which is vital for industrial applications that may experience harsh environmental conditions.

Overall, the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25 SRAM chips are versatile, high-performance memory solutions. Their combination of fast access times, low power consumption, and reliability makes them an excellent choice for engineers and developers looking to implement high-speed memory in a variety of applications. Whether for a communication device or a sophisticated industrial control system, these Cypress SRAMs stand out in the market for their performance and efficiency.
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