Cypress CY7C1383FV25 manual Identification Codes, Ball BGA Boundary Scan Order 13, Bit # Ball ID

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												CY7C1381DV25, CY7C1381FV25
Identification Codes												CY7C1383DV25, CY7C1383FV25
												CY7C1383DV25, CY7C1383FV25





Instruction				Code									Description
EXTEST				000				Captures IO ring contents. Places the boundary scan register between TDI and TDO.
								Forces all SRAM outputs to High-Z state.
IDCODE				001				Loads the ID register with the vendor ID code and places the register between TDI and
								TDO. This operation does not affect SRAM operations.
SAMPLE Z				010				Captures IO ring contents. Places the boundary scan register between TDI and TDO.
								Forces all SRAM output drivers to a High-Z state.
RESERVED				011				Do Not Use. This instruction is reserved for future use.

SAMPLE/PRELOAD				100				Captures IO ring contents. Places the boundary scan register between TDI and TDO.
								Does not affect SRAM operation.
RESERVED				101				Do Not Use. This instruction is reserved for future use.

RESERVED				110				Do Not Use. This instruction is reserved for future use.

BYPASS				111				Places the bypass register between TDI and TDO. This operation does not affect SRAM
								operations.
119-Ball BGA Boundary Scan Order [13, 14]
Bit #		Ball ID					Bit #			Ball ID		Bit #		Ball ID		Bit #	Ball ID

1		H4					23			F6		45		G4		67	L1

2		T4					24			E7		46		A4		68	M2

3		T5					25			D7		47		G3		69	N1

4		T6					26			H7		48		C3		70	P1

5		R5					27			G6		49		B2		71	K1

6		L5					28			E6		50		B3		72	L2

7		R6					29			D6		51		A3		73	N2

8		U6					30			C7		52		C2		74	P2

9		R7					31			B7		53		A2		75	R3

10		T7					32			C6		54		B1		76	T1

11		P6					33			A6		55		C1		77	R1

12		N7					34			C5		56		D2		78	T2

13		M6					35			B5		57		E1		79	L3

14		L7					36			G5		58		F2		80	R2

15		K6					37			B6		59		G1		81	T3

16		P7					38			D4		60		H2		82	L4

17		N6					39			B4		61		D1		83	N4

18		L6					40			F4		62		E2		84	P4

19		K7					41			M4		63		G2		85	Internal

20		J5					42			A5		64		H1

21		H6					43			K4		65		J3

22		G7					44			E4		66		2K

Notes

13.Balls that are NC (No Connect) are preset LOW.

14.Bit #85 is preset HIGH.

Document #: 38-05547 Rev. *E

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Contents Cypress Semiconductor Corporation FeaturesSelection Guide Functional Description 133 MHz 100 MHz UnitLogic Block Diagram CY7C1383DV25/CY7C1383FV25 3 1M x Logic Block Diagram CY7C1381DV25/CY7C1381FV25 3 512K xPin Configurations Pin Tqfp Pinout 3 Chip Enable CY7C1381DV25 512K xCY7C1383DV25 Mbit x Pin Configurations Ball BGA Pinout Pin Configurations Ball Fbga Pinout3 Chip Enable Pin Definitions Name DescriptionByte write select inputs, active LOW. Qualified with Functional Overview = GND Interleaved Burst Address Table Mode = Floating or VDDZZ Mode Electrical Characteristics AddressUsed Address Cycle DescriptionDQPC, Dqpa Truth Table for Read/Write 4Function CY7C1381DV25/CY7C1381FV25 DQPB, DqpaTAP Controller State Diagram TAP Controller Block DiagramIeee 1149.1 Serial Boundary Scan Jtag TAP Instruction Set Bypass RegisterTAP Timing TAP AC Switching CharacteristicsScan Register Sizes 5V TAP AC Test Conditions5V TAP AC Output Load Equivalent Identification Register DefinitionsBit # Ball ID Identification CodesBall BGA Boundary Scan Order 13 Instruction Code DescriptionA11 Range Electrical CharacteristicsMaximum Ratings Operating RangePackage CapacitanceThermal Resistance AC Test Loads and WaveformsSwitching Characteristics Parameter Description 133 MHz 100 MHz Unit MinMin Max Read Cycle Timing Timing DiagramsAdsc Write Cycle Timing 25ADV Read/Write Cycle Timing 25, 27DON’T Care ZZ Mode Timing 29Ordering Information Pin Thin Plastic Quad Flat pack 14 x 20 x 1.4 mm Package DiagramsBall BGA 14 x 22 x 2.4 mm Soldernotespad Type NON-SOLDER Mask Defined Nsmd Document History Issue Date Orig. Description of Change

CY7C1383DV25, CY7C1381FV25, CY7C1381DV25, CY7C1383FV25 specifications

Cypress Semiconductor's family of static random-access memory (SRAM) chips, including the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25, are designed for high-performance applications that require fast access times and low power consumption. These devices are often found in applications such as networking, telecommunications, and industrial control systems, where speed and reliability are paramount.

The CY7C1381FV25 and CY7C1381DV25 are single-port SRAMs, while the CY7C1383FV25 and CY7C1383DV25 are dual-port versions that allow for simultaneous read and write operations from two different controllers. This feature significantly enhances data throughput, making these devices ideal for high-bandwidth applications. The devices support asynchronous read and write operations, ensuring immediate data accessibility with minimal latency.

One of the key features of these SRAM chips is their fast access times, with read and write cycles as short as 10 nanoseconds. This speed makes them suitable for cache memory applications, where performance is critical. Furthermore, the devices are built on Cypress's advanced process technology, which enables them to achieve high density and low power consumption, ideal for battery-operated devices and systems where energy efficiency is crucial.

The power consumption characteristics also highlight their effectiveness in various applications. The active power consumption can be as low as 80mA, depending on the operation conditions, and the devices offer low standby power, further enhancing their suitability for low-power applications. Additionally, these chips incorporate power-saving features like sleep mode, allowing designers to minimize energy consumption in idle states.

In terms of reliability, Cypress employs rigorous quality control measures, ensuring that the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25 meet stringent industry standards. They also feature an extended temperature range, which is vital for industrial applications that may experience harsh environmental conditions.

Overall, the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25 SRAM chips are versatile, high-performance memory solutions. Their combination of fast access times, low power consumption, and reliability makes them an excellent choice for engineers and developers looking to implement high-speed memory in a variety of applications. Whether for a communication device or a sophisticated industrial control system, these Cypress SRAMs stand out in the market for their performance and efficiency.