Cypress CY7C1383DV25, CY7C1383FV25 manual Logic Block Diagram CY7C1381DV25/CY7C1381FV25 3 512K x

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CY7C1381DV25, CY7C1381FV25

 

 

 

CY7C1383DV25, CY7C1383FV25

Logic Block Diagram – CY7C1381DV25/CY7C1381FV25 [3] (512K x 36)

 

 

 

A0, A1, A

 

ADDRESS

 

 

 

 

 

 

REGISTER

 

 

 

 

 

 

 

 

 

 

 

 

MODE

 

 

A[1:0]

 

 

 

 

 

 

 

 

 

 

 

ADV

 

BURST

Q1

 

 

 

 

 

 

 

 

 

 

 

CLK

 

COUNTER

 

 

 

 

 

 

 

AND LOGIC

Q0

 

 

 

 

 

CLR

 

 

 

 

 

 

 

 

 

 

ADSC

 

 

 

 

 

 

 

ADSP

 

 

 

 

 

 

 

 

DQ D, DQP D

 

DQ D, DQP D

 

 

 

 

BW D

 

BYTE

 

 

 

 

BYTE

 

 

 

 

 

 

 

WRITE REGISTER

 

 

 

 

 

WRITE REGISTER

 

 

 

 

 

 

 

 

 

 

 

DQ C , DQP C

 

DQ C , DQP C

 

 

 

 

BW C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

WRITE REGISTER

 

WRITE REGISTER

MEMORY

 

OUTPUT

DQs

 

 

 

SENSE

 

 

 

 

ARRAY

BUFFERS

DQP A

 

 

 

DQ B , DQP B

AMPS

 

DQ B , DQP B

 

 

 

DQP B

BW B

 

 

 

 

 

 

 

WRITE REGISTER

 

 

 

DQP C

 

 

 

 

 

 

 

 

 

 

 

 

DQP D

 

WRITE REGISTER

 

 

 

 

 

 

 

 

DQ A, DQP

 

 

 

 

BW A

DQ A, DQP A

 

BYTE

 

 

 

 

BYTE

 

WRITE REGISTER

 

 

 

 

BWE

 

 

 

 

 

WRITE REGISTER

 

 

 

 

 

 

 

 

 

 

 

GW

 

 

 

 

 

 

INPUT

CE1

ENABLE

 

 

 

 

REGISTERS

 

 

 

 

 

REGISTER

 

 

 

 

 

CE2

 

 

 

 

 

 

 

 

 

 

 

 

CE3

 

 

 

 

 

 

 

OE

 

 

 

 

 

 

 

 

SLEEP

 

 

 

 

 

 

Logic Block Diagram – CY7C1383DV25/CY7C1383FV25 [3] (1M x 18)

A0,A1,A

ADDRESS

 

 

 

 

 

REGISTER

 

 

 

 

 

 

 

 

 

 

 

MODE

 

 

A[1:0]

 

 

 

 

 

 

 

 

 

ADV

 

BURST

Q1

 

 

 

 

 

COUNTER AND

 

 

 

 

 

 

Q0

 

 

 

 

DQ B ,DQP

B

DQ B ,DQP B

 

 

 

 

WRITE DRIVER

 

 

 

BW B

 

 

OUTPUT

 

 

MEMORY

SENSE

DQs

 

 

 

ARRAY

BUFFERS

 

 

 

AMPS

DQP A

 

 

 

 

 

DQ A,DQP A

DQ A,DQP A

 

 

DQP B

 

WRITE DRIVER

 

 

 

BW A

 

 

 

 

 

 

 

 

 

BWE

 

 

 

 

 

INPUT

GW

 

 

 

 

 

ENABLE

 

 

 

 

REGISTERS

CE

 

 

 

 

1

 

 

 

 

 

CE 2

 

 

 

 

 

CE 3

 

 

 

 

 

OE

 

 

 

 

 

 

SLEEP

 

 

 

 

 

 

CONTROL

 

 

 

 

 

Note

 

 

 

 

 

 

3. CY7C1381FV25 and CY7C1383FV25 have only 1 chip enable (CE1).

 

 

 

Document #: 38-05547 Rev. *E

 

 

 

 

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Contents 133 MHz 100 MHz Unit FeaturesSelection Guide Functional Description Cypress Semiconductor CorporationLogic Block Diagram CY7C1381DV25/CY7C1381FV25 3 512K x Logic Block Diagram CY7C1383DV25/CY7C1383FV25 3 1M xCY7C1383DV25 Mbit x Pin Configurations Pin Tqfp Pinout 3 Chip EnableCY7C1381DV25 512K x Pin Configurations Ball BGA Pinout Pin Configurations Ball Fbga Pinout3 Chip Enable Byte write select inputs, active LOW. Qualified with Pin DefinitionsName Description Functional Overview Address Interleaved Burst Address Table Mode = Floating or VDDZZ Mode Electrical Characteristics = GNDAddress Cycle Description UsedDQPB, Dqpa Truth Table for Read/Write 4Function CY7C1381DV25/CY7C1381FV25 DQPC, DqpaIeee 1149.1 Serial Boundary Scan Jtag TAP Controller State DiagramTAP Controller Block Diagram Bypass Register TAP Instruction SetTAP AC Switching Characteristics TAP TimingIdentification Register Definitions 5V TAP AC Test Conditions5V TAP AC Output Load Equivalent Scan Register SizesInstruction Code Description Identification CodesBall BGA Boundary Scan Order 13 Bit # Ball IDA11 Operating Range Electrical CharacteristicsMaximum Ratings RangeAC Test Loads and Waveforms CapacitanceThermal Resistance PackageMin Max Switching CharacteristicsParameter Description 133 MHz 100 MHz Unit Min Timing Diagrams Read Cycle TimingWrite Cycle Timing 25 AdscRead/Write Cycle Timing 25, 27 ADVZZ Mode Timing 29 DON’T CareOrdering Information Package Diagrams Pin Thin Plastic Quad Flat pack 14 x 20 x 1.4 mmBall BGA 14 x 22 x 2.4 mm Soldernotespad Type NON-SOLDER Mask Defined Nsmd Issue Date Orig. Description of Change Document History

CY7C1383DV25, CY7C1381FV25, CY7C1381DV25, CY7C1383FV25 specifications

Cypress Semiconductor's family of static random-access memory (SRAM) chips, including the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25, are designed for high-performance applications that require fast access times and low power consumption. These devices are often found in applications such as networking, telecommunications, and industrial control systems, where speed and reliability are paramount.

The CY7C1381FV25 and CY7C1381DV25 are single-port SRAMs, while the CY7C1383FV25 and CY7C1383DV25 are dual-port versions that allow for simultaneous read and write operations from two different controllers. This feature significantly enhances data throughput, making these devices ideal for high-bandwidth applications. The devices support asynchronous read and write operations, ensuring immediate data accessibility with minimal latency.

One of the key features of these SRAM chips is their fast access times, with read and write cycles as short as 10 nanoseconds. This speed makes them suitable for cache memory applications, where performance is critical. Furthermore, the devices are built on Cypress's advanced process technology, which enables them to achieve high density and low power consumption, ideal for battery-operated devices and systems where energy efficiency is crucial.

The power consumption characteristics also highlight their effectiveness in various applications. The active power consumption can be as low as 80mA, depending on the operation conditions, and the devices offer low standby power, further enhancing their suitability for low-power applications. Additionally, these chips incorporate power-saving features like sleep mode, allowing designers to minimize energy consumption in idle states.

In terms of reliability, Cypress employs rigorous quality control measures, ensuring that the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25 meet stringent industry standards. They also feature an extended temperature range, which is vital for industrial applications that may experience harsh environmental conditions.

Overall, the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25 SRAM chips are versatile, high-performance memory solutions. Their combination of fast access times, low power consumption, and reliability makes them an excellent choice for engineers and developers looking to implement high-speed memory in a variety of applications. Whether for a communication device or a sophisticated industrial control system, these Cypress SRAMs stand out in the market for their performance and efficiency.