Cypress CY7C1383FV25 Switching Characteristics, Parameter Description 133 MHz 100 MHz Unit Min

Page 19

CY7C1381DV25, CY7C1381FV25

CY7C1383DV25, CY7C1383FV25

Switching Characteristics

Over the Operating Range [19, 20]

 

Parameter

 

 

 

 

 

 

 

 

 

 

 

Description

133 MHz

100 MHz

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Min.

Max.

Min.

Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t

POWER

 

V (Typical) to the first Access [21]

1

 

1

 

ms

 

 

DD

 

 

 

 

 

Clock

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCYC

 

Clock Cycle Time

7.5

 

10

 

ns

tCH

 

Clock HIGH

2.1

 

2.5

 

ns

tCL

 

Clock LOW

2.1

 

2.5

 

ns

Output Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCDV

 

Data Output Valid After CLK Rise

 

6.5

 

8.5

ns

tDOH

 

Data Output Hold After CLK Rise

2.0

 

2.0

 

ns

tCLZ

 

Clock to Low-Z [22, 23, 24]

2.0

 

2.0

 

ns

tCHZ

 

Clock to High-Z [22, 23, 24]

0

4.0

0

5.0

ns

tOEV

 

 

 

LOW to Output Valid

 

3.2

 

3.8

ns

OE

 

 

tOELZ

 

 

 

LOW to Output Low-Z [22, 23, 24]

0

 

0

 

ns

OE

 

 

tOEHZ

 

 

 

HIGH to Output High-Z [22, 23, 24]

 

4.0

 

5.0

ns

OE

 

 

Setup Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAS

 

Address Setup Before CLK Rise

1.5

 

1.5

 

ns

tADS

 

 

 

 

 

 

 

 

 

 

Setup Before CLK Rise

1.5

 

1.5

 

ns

ADSP,

ADSC

 

 

tADVS

 

 

 

 

 

Setup Before CLK Rise

1.5

 

1.5

 

ns

ADV

 

 

tWES

 

 

 

 

 

 

 

 

 

 

[A:D] Setup Before CLK Rise

1.5

 

1.5

 

ns

GW,

BWE,

BW

 

 

tDS

 

Data Input Setup Before CLK Rise

1.5

 

1.5

 

ns

tCES

 

Chip Enable Setup

1.5

 

1.5

 

ns

Hold Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAH

 

Address Hold After CLK Rise

0.5

 

0.5

 

ns

tADH

 

 

 

 

 

 

 

 

 

 

Hold After CLK Rise

0.5

 

0.5

 

ns

ADSP,

ADSC

 

 

tWEH

 

 

 

 

 

 

 

 

 

 

[A:D] Hold After CLK Rise

0.5

 

0.5

 

ns

GW,

BWE,

BW

 

 

tADVH

 

 

 

 

Hold After CLK Rise

0.5

 

0.5

 

ns

ADV

 

 

tDH

 

Data Input Hold After CLK Rise

0.5

 

0.5

 

ns

tCEH

 

Chip Enable Hold After CLK Rise

0.5

 

0.5

 

ns

Notes

19.Timing reference level is 1.25V.

20.Test conditions shown in (a) of AC Test Loads unless otherwise noted.

21.This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially, before a read or write operation can be initiated.

22.tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.

23.At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z prior to Low-Z under the same system conditions.

24.This parameter is sampled and not 100% tested.

Document #: 38-05547 Rev. *E

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Contents Cypress Semiconductor Corporation FeaturesSelection Guide Functional Description 133 MHz 100 MHz UnitLogic Block Diagram CY7C1383DV25/CY7C1383FV25 3 1M x Logic Block Diagram CY7C1381DV25/CY7C1381FV25 3 512K xCY7C1381DV25 512K x Pin Configurations Pin Tqfp Pinout 3 Chip EnableCY7C1383DV25 Mbit x Pin Configurations Ball BGA Pinout Pin Configurations Ball Fbga Pinout3 Chip Enable Name Description Pin DefinitionsByte write select inputs, active LOW. Qualified with Functional Overview = GND Interleaved Burst Address Table Mode = Floating or VDDZZ Mode Electrical Characteristics AddressUsed Address Cycle DescriptionDQPC, Dqpa Truth Table for Read/Write 4Function CY7C1381DV25/CY7C1381FV25 DQPB, DqpaTAP Controller Block Diagram TAP Controller State DiagramIeee 1149.1 Serial Boundary Scan Jtag TAP Instruction Set Bypass RegisterTAP Timing TAP AC Switching CharacteristicsScan Register Sizes 5V TAP AC Test Conditions5V TAP AC Output Load Equivalent Identification Register DefinitionsBit # Ball ID Identification CodesBall BGA Boundary Scan Order 13 Instruction Code DescriptionA11 Range Electrical CharacteristicsMaximum Ratings Operating RangePackage CapacitanceThermal Resistance AC Test Loads and WaveformsParameter Description 133 MHz 100 MHz Unit Min Switching CharacteristicsMin Max Read Cycle Timing Timing DiagramsAdsc Write Cycle Timing 25ADV Read/Write Cycle Timing 25, 27DON’T Care ZZ Mode Timing 29Ordering Information Pin Thin Plastic Quad Flat pack 14 x 20 x 1.4 mm Package DiagramsBall BGA 14 x 22 x 2.4 mm Soldernotespad Type NON-SOLDER Mask Defined Nsmd Document History Issue Date Orig. Description of Change

CY7C1383DV25, CY7C1381FV25, CY7C1381DV25, CY7C1383FV25 specifications

Cypress Semiconductor's family of static random-access memory (SRAM) chips, including the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25, are designed for high-performance applications that require fast access times and low power consumption. These devices are often found in applications such as networking, telecommunications, and industrial control systems, where speed and reliability are paramount.

The CY7C1381FV25 and CY7C1381DV25 are single-port SRAMs, while the CY7C1383FV25 and CY7C1383DV25 are dual-port versions that allow for simultaneous read and write operations from two different controllers. This feature significantly enhances data throughput, making these devices ideal for high-bandwidth applications. The devices support asynchronous read and write operations, ensuring immediate data accessibility with minimal latency.

One of the key features of these SRAM chips is their fast access times, with read and write cycles as short as 10 nanoseconds. This speed makes them suitable for cache memory applications, where performance is critical. Furthermore, the devices are built on Cypress's advanced process technology, which enables them to achieve high density and low power consumption, ideal for battery-operated devices and systems where energy efficiency is crucial.

The power consumption characteristics also highlight their effectiveness in various applications. The active power consumption can be as low as 80mA, depending on the operation conditions, and the devices offer low standby power, further enhancing their suitability for low-power applications. Additionally, these chips incorporate power-saving features like sleep mode, allowing designers to minimize energy consumption in idle states.

In terms of reliability, Cypress employs rigorous quality control measures, ensuring that the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25 meet stringent industry standards. They also feature an extended temperature range, which is vital for industrial applications that may experience harsh environmental conditions.

Overall, the CY7C1381FV25, CY7C1383DV25, CY7C1381DV25, and CY7C1383FV25 SRAM chips are versatile, high-performance memory solutions. Their combination of fast access times, low power consumption, and reliability makes them an excellent choice for engineers and developers looking to implement high-speed memory in a variety of applications. Whether for a communication device or a sophisticated industrial control system, these Cypress SRAMs stand out in the market for their performance and efficiency.