Cypress CY7C1415JV18, CY7C1426JV18 Truth Table, Write Cycle Descriptions, Operation, Comments

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CY7C1411JV18, CY7C1426JV18

CY7C1413JV18, CY7C1415JV18

Truth Table

The truth table for CY7C1411JV18, CY7C1426JV18, CY7C1413JV18, and CY7C1415JV18 follows. [2, 3, 4, 5, 6, 7]

Operation

K

RPS

 

 

WPS

DQ

DQ

DQ

DQ

Write Cycle:

L-H

H [8]

 

 

L [9]

D(A) at K(t + 1)

D(A + 1) at

 

 

D(A + 2) at K(t + 2)

 

 

 

 

 

K(t + 1)

D(A + 3) at K(t + 2)

Load address on the rising

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

edge of K; input write data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

on two consecutive K and

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

K rising edges.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle:

L-H

L [9]

 

 

X

Q(A) at

 

 

Q(A + 1) at C(t + 2)

 

 

 

Q(A + 3) at C(t + 3)

 

 

C(t + 1)

Q(A + 2) at C(t + 2)

Load address on the rising

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

edge of K; wait one and a

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

half cycle; read data on

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

two consecutive C and C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

rising edges.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOP: No Operation

L-H

H

 

 

H

D = X

D = X

D = X

D = X

 

 

 

 

 

 

Q = High-Z

Q = High-Z

Q = High-Z

Q = High-Z

Standby: Clock Stopped

Stopped

X

 

 

X

Previous State

Previous State

Previous State

Previous State

Write Cycle Descriptions

The write cycle description table for CY7C1411JV18 and CY7C1413JV18 follows. [2, 10]

 

BWS0/

BWS1/

K

 

 

 

Comments

 

 

 

 

K

 

 

 

 

 

 

 

 

 

 

 

 

NWS0

 

NWS1

 

 

 

 

 

 

 

 

 

 

 

 

L

 

L

L–H

 

During the data portion of a write sequence :

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1411JV18 both nibbles (D[7:0]) are written into the device,

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1413JV18 both bytes (D[17:0]) are written into the device.

 

 

 

L

 

L

L-H

During the data portion of a write sequence :

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1411JV18 both nibbles (D[7:0]) are written into the device,

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1413JV18 both bytes (D[17:0]) are written into the device.

 

 

 

L

 

H

L–H

 

During the data portion of a write sequence :

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1411JV18 only the lower nibble (D[3:0]) is written into the device, D[7:4]

 

remains unaltered.

 

 

 

 

 

 

 

 

 

 

CY7C1413JV18 only the lower byte (D[8:0]) is written into the device, D[17:9]

remains unaltered.

 

L

 

H

L–H

During the data portion of a write sequence :

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1411JV18 only the lower nibble (D[3:0]) is written into the device, D[7:4]

 

remains unaltered.

 

 

 

 

 

 

 

 

 

 

CY7C1413JV18 only the lower byte (D[8:0]) is written into the device, D[17:9]

remains unaltered.

 

H

 

L

L–H

 

During the data portion of a write sequence :

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1411JV18 only the upper nibble (D[7:4]) is written into the device, D[3:0]

remains unaltered.

 

 

 

 

 

 

 

 

 

 

CY7C1413JV18 only the upper byte (D[17:9]) is written into the device, D[8:0]

 

remains unaltered.

 

H

 

L

L–H

During the data portion of a write sequence :

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1411JV18 only the upper nibble (D[7:4]) is written into the device, D[3:0]

remains unaltered.

 

 

 

 

 

 

 

 

 

 

CY7C1413JV18 only the upper byte (D[17:9]) is written into the device, D[8:0]

 

remains unaltered.

 

H

 

H

L–H

 

No data is written into the devices during this portion of a write operation.

 

 

 

 

 

 

 

 

 

 

 

 

H

 

H

L–H

No data is written into the devices during this portion of a write operation.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

2.X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.

3.Device powers up deselected with the outputs in a tri-state condition.

4.“A” represents address location latched by the devices when transaction was initiated. A + 1, A + 2, and A +3 represents the address sequence in the burst.

5.“t” represents the cycle at which a read/write operation is started. t + 1, t + 2, and t + 3 are the first, second and third clock cycles respectively succeeding the “t” clock cycle.

6.Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.

7.It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.

8.If this signal was LOW to initiate the previous cycle, this signal becomes a “Don’t Care” for this operation.

9.This signal was HIGH on previous K clock rise. Initiating consecutive read or write operations on consecutive K clock rises is not permitted. The device ignores the second read or write request.

10.Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. NWS0, NWS1, BWS0, BWS1, BWS2, and BWS3 can be altered on different portions of a write cycle, as long as the setup and hold requirements are achieved.

Document Number: 001-12557 Rev. *C

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Contents Functional Description FeaturesConfigurations Selection GuideLogic Block Diagram CY7C1426JV18 Logic Block Diagram CY7C1411JV18Doff Logic Block Diagram CY7C1413JV18 Logic Block Diagram CY7C1415JV18CY7C1411JV18 4M x Pin ConfigurationBall Fbga 15 x 17 x 1.4 mm Pinout CY7C1426JV18 4M xWPS BWS CY7C1413JV18 2M xCY7C1415JV18 1M x Pin Definitions Pin Name Pin DescriptionIs Referenced With Respect to Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TDO for JtagFunctional Overview Programmable Impedance Application ExampleDepth Expansion Echo ClocksOperation Truth TableWrite Cycle Descriptions CommentsBWS0 Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsScan Register Sizes Identification Register DefinitionsInstruction Codes Boundary Scan Order Bit # Bump IDPower Up Sequence Power Up Sequence in QDR-II SramDLL Constraints DC Electrical Characteristics Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance Parameter Description Test Conditions Fbga UnitLOW Switching CharacteristicsHigh DLL TimingSwitching Waveforms Read/Write/Deselect Sequence 27, 28Ordering Information 200 Package Diagram Ball Fbga 15 x 17 x 1.40 mmSales, Solutions, and Legal Information Worldwide Sales and Design Support Products PSoC Solutions

CY7C1413JV18, CY7C1426JV18, CY7C1411JV18, CY7C1415JV18 specifications

Cypress Semiconductor, known for its innovative memory solutions, offers a range of high-performance SRAM products suitable for a variety of applications. Among these are the CY7C1415JV18, CY7C1411JV18, CY7C1426JV18, and CY7C1413JV18, which feature advanced technologies and robust performance characteristics.

The CY7C1415JV18 is a 4-Mbit high-speed asynchronous SRAM. Designed for applications requiring fast data access, it boasts a maximum access time of just 10 ns. This product operates at a supply voltage of 1.8V, making it ideal for low-power systems. It supports a simple interface, allowing for easy integration into various digital systems. Enhanced data integrity is assured through support for write cycles and concurrent read operations, making it suitable for high-demand environments.

The CY7C1411JV18 is a 2-Mbit synchronous SRAM that offers high speed and low latency. Its access time is optimized for high-performance applications, reaching speeds of up to 10 ns as well. The device is designed with a flexible interface that accommodates both burst and non-burst operations, increasing data throughput for memory-intensive tasks. Like its counterparts, it operates on a low voltage, ensuring minimal power consumption.

Next, the CY7C1426JV18 also belongs to Cypress's high-performance SRAM family, providing 2-Mbit storage capacity with excellent read and write performance characteristics. This SRAM features an advanced design that supports pipelined operations, allowing multiple memory accesses to occur simultaneously. This feature effectively maximizes data transmission rates, making it particularly appealing for applications needing rapid data processing.

Finally, the CY7C1413JV18 offers 1-Mbit of SRAM capacity optimized for speed and efficiency. With an access time of 9 ns, it is among the fastest products in its category. The device features advanced functionalities enabling compatibility with various hardware configurations, thus facilitating its use in a wide array of embedded systems.

All these SRAM devices feature low power consumption, making them suitable for battery-operated devices and energy-efficient applications. Their ability to operate at lower voltages while maintaining high performance is a key characteristic that aligns with modern design requirements. The combination of speed, low power, and flexibility makes the CY7C1415JV18, CY7C1411JV18, CY7C1426JV18, and CY7C1413JV18 highly sought after in industries ranging from telecommunications to consumer electronics, solidifying Cypress's reputation as a leader in memory solutions.