Cypress CY7C1415JV18, CY7C1426JV18, CY7C1411JV18, CY7C1413JV18 manual Capacitance, Thermal Resistance

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CY7C1411JV18, CY7C1426JV18

CY7C1413JV18, CY7C1415JV18

Capacitance

Tested initially and after any design or process change that may affect these parameters.

Parameter

Description

Test Conditions

Max

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz, VDD = 1.8V, VDDQ = 1.5V

5

pF

CCLK

Clock Input Capacitance

 

4

pF

CO

Output Capacitance

 

6

pF

Thermal Resistance

Tested initially and after any design or process change that may affect these parameters.

Parameter

Description

 

Test Conditions

165 FBGA

Unit

 

Package

 

 

 

 

 

ΘJA

Thermal Resistance

 

Test conditions follow standard test methods and

17.2

°C/W

 

(Junction to Ambient)

 

procedures for measuring thermal impedance, in

 

 

 

 

 

accordance with EIA/JESD51.

 

 

ΘJC

Thermal Resistance

 

3.2

°C/W

 

 

 

(Junction to Case)

 

 

 

 

 

 

Figure 4. AC Test Loads and Waveforms

 

 

VREF = 0.75V

VREF

 

 

 

 

 

 

 

0.75V

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

Z0 = 50Ω

 

 

 

 

 

 

 

 

 

 

 

 

Device

 

 

 

 

 

 

 

 

 

Under

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Test

 

 

 

 

 

 

 

 

 

 

 

 

 

ZQ

RQ =

250Ω

(a)

RL = 50Ω

VREF = 0.75V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VREF

 

 

 

 

 

 

0.75V

 

 

 

 

 

R = 50Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ALL INPUT PULSES[22]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.25V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Device

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5 pF 0.25V

 

 

 

0.75V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Under

ZQ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Slew Rate = 2 V/ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Test

 

 

 

 

 

 

RQ =

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

250Ω

 

 

 

 

 

 

 

 

 

 

INCLUDING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

JIG AND

 

 

 

 

 

 

(b)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SCOPE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

22.Unless otherwise noted, test conditions are based on signal transition time of 2V/ns, timing reference levels of 0.75V, Vref = 0.75V, RQ = 250Ω, VDDQ = 1.5V, input pulse levels of 0.25V to 1.25V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of AC Test Loads and Waveforms.

Document Number: 001-12557 Rev. *C

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Contents Functional Description FeaturesConfigurations Selection GuideLogic Block Diagram CY7C1426JV18 Logic Block Diagram CY7C1411JV18Doff Logic Block Diagram CY7C1413JV18 Logic Block Diagram CY7C1415JV18CY7C1411JV18 4M x Pin ConfigurationBall Fbga 15 x 17 x 1.4 mm Pinout CY7C1426JV18 4M xWPS BWS CY7C1413JV18 2M xCY7C1415JV18 1M x Pin Definitions Pin Name Pin DescriptionIs Referenced With Respect to Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TDO for JtagFunctional Overview Programmable Impedance Application ExampleDepth Expansion Echo ClocksOperation Truth TableWrite Cycle Descriptions CommentsBWS0 Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsScan Register Sizes Identification Register DefinitionsInstruction Codes Boundary Scan Order Bit # Bump IDPower Up Sequence Power Up Sequence in QDR-II SramDLL Constraints DC Electrical Characteristics Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance Parameter Description Test Conditions Fbga UnitLOW Switching CharacteristicsHigh DLL TimingSwitching Waveforms Read/Write/Deselect Sequence 27, 28Ordering Information 200 Package Diagram Ball Fbga 15 x 17 x 1.40 mmSales, Solutions, and Legal Information Worldwide Sales and Design Support Products PSoC Solutions

CY7C1413JV18, CY7C1426JV18, CY7C1411JV18, CY7C1415JV18 specifications

Cypress Semiconductor, known for its innovative memory solutions, offers a range of high-performance SRAM products suitable for a variety of applications. Among these are the CY7C1415JV18, CY7C1411JV18, CY7C1426JV18, and CY7C1413JV18, which feature advanced technologies and robust performance characteristics.

The CY7C1415JV18 is a 4-Mbit high-speed asynchronous SRAM. Designed for applications requiring fast data access, it boasts a maximum access time of just 10 ns. This product operates at a supply voltage of 1.8V, making it ideal for low-power systems. It supports a simple interface, allowing for easy integration into various digital systems. Enhanced data integrity is assured through support for write cycles and concurrent read operations, making it suitable for high-demand environments.

The CY7C1411JV18 is a 2-Mbit synchronous SRAM that offers high speed and low latency. Its access time is optimized for high-performance applications, reaching speeds of up to 10 ns as well. The device is designed with a flexible interface that accommodates both burst and non-burst operations, increasing data throughput for memory-intensive tasks. Like its counterparts, it operates on a low voltage, ensuring minimal power consumption.

Next, the CY7C1426JV18 also belongs to Cypress's high-performance SRAM family, providing 2-Mbit storage capacity with excellent read and write performance characteristics. This SRAM features an advanced design that supports pipelined operations, allowing multiple memory accesses to occur simultaneously. This feature effectively maximizes data transmission rates, making it particularly appealing for applications needing rapid data processing.

Finally, the CY7C1413JV18 offers 1-Mbit of SRAM capacity optimized for speed and efficiency. With an access time of 9 ns, it is among the fastest products in its category. The device features advanced functionalities enabling compatibility with various hardware configurations, thus facilitating its use in a wide array of embedded systems.

All these SRAM devices feature low power consumption, making them suitable for battery-operated devices and energy-efficient applications. Their ability to operate at lower voltages while maintaining high performance is a key characteristic that aligns with modern design requirements. The combination of speed, low power, and flexibility makes the CY7C1415JV18, CY7C1411JV18, CY7C1426JV18, and CY7C1413JV18 highly sought after in industries ranging from telecommunications to consumer electronics, solidifying Cypress's reputation as a leader in memory solutions.