Cypress CY7C1426JV18, CY7C1411JV18 manual Switching Waveforms, Read/Write/Deselect Sequence 27, 28

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CY7C1411JV18, CY7C1426JV18

CY7C1413JV18, CY7C1415JV18

Switching Waveforms

Figure 5. Read/Write/Deselect Sequence [27, 28, 29]

NOP	READ	WRITE	READ	WRITE	NOP	7
1	2	3	4	5	6	7

K RPS

WPS

t KH

tKL t CYC t KHKH

t SC tHC

t SC t HC

A	A0	A1	A2
	tSA	tHA

tSD

Q00

A3
tHD	t HD
tSD
D12			D32	D33
Q02	Q20	Q21	Q22
tCO	tCQDOH			t CHZ

t KHCH

t KHCH t CLZ

tDOH										tCQD

t CQH

t CYC	t KHKH
	t	CQOH	t CCQO
		CQOH
t CQHCQH			t CCQO
			t CQOH

t KH

tKL

DON’T CARE

UNDEFINED

Notes

27.Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0+1.

28.Outputs are disabled (High-Z) one clock cycle after a NOP.

29.In this example, if address A2 = A1, then data Q20 = D10 and Q21 = D11. Write data is forwarded immediately as read results. This note applies to the whole diagram.

Document Number: 001-12557 Rev. *C

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Contents Features ConfigurationsFunctional Description Selection GuideLogic Block Diagram CY7C1411JV18 Logic Block Diagram CY7C1426JV18Doff Logic Block Diagram CY7C1413JV18 Logic Block Diagram CY7C1415JV18Pin Configuration Ball Fbga 15 x 17 x 1.4 mm PinoutCY7C1411JV18 4M x CY7C1426JV18 4M xCY7C1413JV18 2M x WPS BWSCY7C1415JV18 1M x Pin Definitions Pin Name Pin DescriptionPower Supply Inputs to the Core of the Device Power Supply Inputs for the Outputs of the DeviceIs Referenced With Respect to TDO for JtagFunctional Overview Application Example Depth ExpansionProgrammable Impedance Echo ClocksTruth Table Write Cycle DescriptionsOperation CommentsBWS0 Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsIdentification Register Definitions Scan Register SizesInstruction Codes Boundary Scan Order Bit # Bump IDPower Up Sequence in QDR-II Sram Power Up SequenceDLL Constraints Electrical Characteristics DC Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Capacitance Thermal ResistanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitSwitching Characteristics HighLOW DLL TimingSwitching Waveforms Read/Write/Deselect Sequence 27, 28Ordering Information 200 Package Diagram Ball Fbga 15 x 17 x 1.40 mmSales, Solutions, and Legal Information Worldwide Sales and Design Support Products PSoC Solutions

CY7C1413JV18, CY7C1426JV18, CY7C1411JV18, CY7C1415JV18 specifications

Cypress Semiconductor, known for its innovative memory solutions, offers a range of high-performance SRAM products suitable for a variety of applications. Among these are the CY7C1415JV18, CY7C1411JV18, CY7C1426JV18, and CY7C1413JV18, which feature advanced technologies and robust performance characteristics.

The CY7C1415JV18 is a 4-Mbit high-speed asynchronous SRAM. Designed for applications requiring fast data access, it boasts a maximum access time of just 10 ns. This product operates at a supply voltage of 1.8V, making it ideal for low-power systems. It supports a simple interface, allowing for easy integration into various digital systems. Enhanced data integrity is assured through support for write cycles and concurrent read operations, making it suitable for high-demand environments.

The CY7C1411JV18 is a 2-Mbit synchronous SRAM that offers high speed and low latency. Its access time is optimized for high-performance applications, reaching speeds of up to 10 ns as well. The device is designed with a flexible interface that accommodates both burst and non-burst operations, increasing data throughput for memory-intensive tasks. Like its counterparts, it operates on a low voltage, ensuring minimal power consumption.

Next, the CY7C1426JV18 also belongs to Cypress's high-performance SRAM family, providing 2-Mbit storage capacity with excellent read and write performance characteristics. This SRAM features an advanced design that supports pipelined operations, allowing multiple memory accesses to occur simultaneously. This feature effectively maximizes data transmission rates, making it particularly appealing for applications needing rapid data processing.

Finally, the CY7C1413JV18 offers 1-Mbit of SRAM capacity optimized for speed and efficiency. With an access time of 9 ns, it is among the fastest products in its category. The device features advanced functionalities enabling compatibility with various hardware configurations, thus facilitating its use in a wide array of embedded systems.

All these SRAM devices feature low power consumption, making them suitable for battery-operated devices and energy-efficient applications. Their ability to operate at lower voltages while maintaining high performance is a key characteristic that aligns with modern design requirements. The combination of speed, low power, and flexibility makes the CY7C1415JV18, CY7C1411JV18, CY7C1426JV18, and CY7C1413JV18 highly sought after in industries ranging from telecommunications to consumer electronics, solidifying Cypress's reputation as a leader in memory solutions.