Cypress CY7C1426JV18, CY7C1411JV18 manual Maximum Ratings, DC Electrical Characteristics

Page 20

CY7C1411JV18, CY7C1426JV18 CY7C1413JV18, CY7C1415JV18

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature ................................. –65°C to +150°C

Ambient Temperature with Power Applied.. –55°C to +125°C

Supply Voltage on VDD Relative to GND

–0.5V to +2.9V

Supply Voltage on VDDQ Relative to GND

–0.5V to +VDD

DC Applied to Outputs in High-Z

–0.5V to VDDQ + 0.3V

DC Input Voltage [13]

–0.5V to V + 0.3V

 

 

DD

Current into Outputs (LOW)

 

20 mA

Static Discharge Voltage (MIL-STD-883, M. 3015)..

> 2001V

Latch Up Current

...................................................

 

> 200 mA

Operating Range

 

 

 

 

 

 

 

 

 

Ambient

VDD [17]

VDDQ [17]

Range

 

Temperature (TA)

Commercial

 

0°C to +70°C

1.8 ± 0.1V

1.4V to

 

 

 

 

VDD

Industrial

 

–40°C to +85°C

 

Electrical Characteristics

DC Electrical Characteristics

Over the Operating Range [14]

Parameter

Description

Test Conditions

 

Min

Typ

Max

Unit

VDD

Power Supply Voltage

 

 

 

1.7

1.8

1.9

V

VDDQ

IO Supply Voltage

 

 

 

1.4

1.5

VDD

V

VOH

Output HIGH Voltage

Note 18

 

 

VDDQ/2 – 0.12

 

VDDQ/2 + 0.12

V

VOL

Output LOW Voltage

Note 19

 

 

VDDQ/2 – 0.12

 

VDDQ/2 + 0.12

V

VOH(LOW)

Output HIGH Voltage

IOH = −0.1 mA, Nominal Impedance

 

VDDQ – 0.2

 

VDDQ

V

VOL(LOW)

Output LOW Voltage

IOL = 0.1 mA, Nominal Impedance

 

VSS

 

0.2

V

VIH

Input HIGH Voltage

 

 

 

VREF + 0.1

 

VDDQ + 0.15

V

VIL

Input LOW Voltage

 

 

 

–0.15

 

VREF – 0.1

V

IX

Input Leakage Current

GND ≤ VI ≤ VDDQ

 

 

−2

 

2

μA

IOZ

Output Leakage Current

GND ≤ VI ≤ VDDQ, Output Disabled

 

−2

 

2

μA

VREF

Input Reference Voltage [20]

Typical Value = 0.75V

 

 

0.68

0.75

0.95

V

IDD [21]

VDD Operating Supply

VDD = Max,

300 MHz

(x8)

 

 

965

mA

 

 

IOUT = 0 mA,

 

 

 

 

 

 

 

 

 

(x9)

 

 

970

 

 

 

f = fMAX = 1/tCYC

 

 

 

 

 

 

 

 

 

(x18)

 

 

1010

 

 

 

 

 

 

 

 

 

 

 

 

(x36)

 

 

1130

 

 

 

 

250 MHz

(x8)

 

 

745

mA

 

 

 

 

(x9)

 

 

760

 

 

 

 

 

(x18)

 

 

790

 

 

 

 

 

(x36)

 

 

870

 

 

 

 

200 MHz

(x8)

 

 

620

mA

 

 

 

 

(x9)

 

 

620

 

 

 

 

 

(x18)

 

 

655

 

 

 

 

 

(x36)

 

 

715

 

Notes

17.Power up: Assumes a linear ramp from 0V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

18.Output are impedance controlled. IOH = −(VDDQ/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.

19.Output are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.

20.VREF (min) = 0.68V or 0.46VDDQ, whichever is larger, VREF (max) = 0.95V or 0.54VDDQ, whichever is smaller.

21.The operation current is calculated with 50% read cycle and 50% write cycle.

Document Number: 001-12557 Rev. *C

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Contents Features ConfigurationsFunctional Description Selection GuideDoff Logic Block Diagram CY7C1411JV18Logic Block Diagram CY7C1426JV18 Logic Block Diagram CY7C1413JV18 Logic Block Diagram CY7C1415JV18Pin Configuration Ball Fbga 15 x 17 x 1.4 mm PinoutCY7C1411JV18 4M x CY7C1426JV18 4M xCY7C1415JV18 1M x CY7C1413JV18 2M xWPS BWS Pin Definitions Pin Name Pin DescriptionPower Supply Inputs to the Core of the Device Power Supply Inputs for the Outputs of the DeviceIs Referenced With Respect to TDO for JtagFunctional Overview Application Example Depth ExpansionProgrammable Impedance Echo ClocksTruth Table Write Cycle DescriptionsOperation CommentsBWS0 Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsInstruction Codes Identification Register DefinitionsScan Register Sizes Boundary Scan Order Bit # Bump IDDLL Constraints Power Up Sequence in QDR-II SramPower Up Sequence Maximum Ratings Electrical CharacteristicsDC Electrical Characteristics AC Electrical Characteristics Capacitance Thermal ResistanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitSwitching Characteristics HighLOW DLL TimingSwitching Waveforms Read/Write/Deselect Sequence 27, 28Ordering Information 200 Package Diagram Ball Fbga 15 x 17 x 1.40 mmSales, Solutions, and Legal Information Worldwide Sales and Design Support Products PSoC Solutions

CY7C1413JV18, CY7C1426JV18, CY7C1411JV18, CY7C1415JV18 specifications

Cypress Semiconductor, known for its innovative memory solutions, offers a range of high-performance SRAM products suitable for a variety of applications. Among these are the CY7C1415JV18, CY7C1411JV18, CY7C1426JV18, and CY7C1413JV18, which feature advanced technologies and robust performance characteristics.

The CY7C1415JV18 is a 4-Mbit high-speed asynchronous SRAM. Designed for applications requiring fast data access, it boasts a maximum access time of just 10 ns. This product operates at a supply voltage of 1.8V, making it ideal for low-power systems. It supports a simple interface, allowing for easy integration into various digital systems. Enhanced data integrity is assured through support for write cycles and concurrent read operations, making it suitable for high-demand environments.

The CY7C1411JV18 is a 2-Mbit synchronous SRAM that offers high speed and low latency. Its access time is optimized for high-performance applications, reaching speeds of up to 10 ns as well. The device is designed with a flexible interface that accommodates both burst and non-burst operations, increasing data throughput for memory-intensive tasks. Like its counterparts, it operates on a low voltage, ensuring minimal power consumption.

Next, the CY7C1426JV18 also belongs to Cypress's high-performance SRAM family, providing 2-Mbit storage capacity with excellent read and write performance characteristics. This SRAM features an advanced design that supports pipelined operations, allowing multiple memory accesses to occur simultaneously. This feature effectively maximizes data transmission rates, making it particularly appealing for applications needing rapid data processing.

Finally, the CY7C1413JV18 offers 1-Mbit of SRAM capacity optimized for speed and efficiency. With an access time of 9 ns, it is among the fastest products in its category. The device features advanced functionalities enabling compatibility with various hardware configurations, thus facilitating its use in a wide array of embedded systems.

All these SRAM devices feature low power consumption, making them suitable for battery-operated devices and energy-efficient applications. Their ability to operate at lower voltages while maintaining high performance is a key characteristic that aligns with modern design requirements. The combination of speed, low power, and flexibility makes the CY7C1415JV18, CY7C1411JV18, CY7C1426JV18, and CY7C1413JV18 highly sought after in industries ranging from telecommunications to consumer electronics, solidifying Cypress's reputation as a leader in memory solutions.
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