Cypress CY7C1415JV18, CY7C1426JV18, CY7C1411JV18, CY7C1413JV18 manual 200

Page 26

CY7C1411JV18, CY7C1426JV18

CY7C1413JV18, CY7C1415JV18

Ordering Information (continued)

Not all of the speed, package, and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered.

Speed

Ordering Code

Package

Package Type

Operating

(MHz)

Diagram

Range

200

CY7C1411JV18-200BZC

51-85195

165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)

Commercial

 

 

 

 

 

 

CY7C1426JV18-200BZC

 

 

 

 

 

 

 

 

 

CY7C1413JV18-200BZC

 

 

 

 

 

 

 

 

 

CY7C1415JV18-200BZC

 

 

 

 

 

 

 

 

 

CY7C1411JV18-200BZXC

51-85195

165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free

 

 

 

 

 

 

 

CY7C1426JV18-200BZXC

 

 

 

 

 

 

 

 

 

CY7C1413JV18-200BZXC

 

 

 

 

 

 

 

 

 

CY7C1415JV18-200BZXC

 

 

 

 

 

 

 

 

 

CY7C1411JV18-200BZI

51-85195

165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)

Industrial

 

 

 

 

 

 

CY7C1426JV18-200BZI

 

 

 

 

 

 

 

 

 

CY7C1413JV18-200BZI

 

 

 

 

 

 

 

 

 

CY7C1415JV18-200BZI

 

 

 

 

 

 

 

 

 

CY7C1411JV18-200BZXI

51-85195

165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free

 

 

 

 

 

 

 

CY7C1426JV18-200BZXI

 

 

 

 

 

 

 

 

 

CY7C1413JV18-200BZXI

 

 

 

 

 

 

 

 

 

CY7C1415JV18-200BZXI

 

 

 

 

 

 

 

 

Document Number: 001-12557 Rev. *C

Page 26 of 28

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Contents Functional Description FeaturesConfigurations Selection GuideDoff Logic Block Diagram CY7C1411JV18Logic Block Diagram CY7C1426JV18 Logic Block Diagram CY7C1413JV18 Logic Block Diagram CY7C1415JV18CY7C1411JV18 4M x Pin ConfigurationBall Fbga 15 x 17 x 1.4 mm Pinout CY7C1426JV18 4M xCY7C1415JV18 1M x CY7C1413JV18 2M xWPS BWS Pin Definitions Pin Name Pin DescriptionIs Referenced With Respect to Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TDO for JtagFunctional Overview Programmable Impedance Application ExampleDepth Expansion Echo ClocksOperation Truth TableWrite Cycle Descriptions CommentsBWS0 Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsInstruction Codes Identification Register DefinitionsScan Register Sizes Boundary Scan Order Bit # Bump IDDLL Constraints Power Up Sequence in QDR-II SramPower Up Sequence Maximum Ratings Electrical CharacteristicsDC Electrical Characteristics AC Electrical Characteristics Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance Parameter Description Test Conditions Fbga UnitLOW Switching CharacteristicsHigh DLL TimingSwitching Waveforms Read/Write/Deselect Sequence 27, 28Ordering Information 200 Package Diagram Ball Fbga 15 x 17 x 1.40 mmSales, Solutions, and Legal Information Worldwide Sales and Design Support Products PSoC Solutions

CY7C1413JV18, CY7C1426JV18, CY7C1411JV18, CY7C1415JV18 specifications

Cypress Semiconductor, known for its innovative memory solutions, offers a range of high-performance SRAM products suitable for a variety of applications. Among these are the CY7C1415JV18, CY7C1411JV18, CY7C1426JV18, and CY7C1413JV18, which feature advanced technologies and robust performance characteristics.

The CY7C1415JV18 is a 4-Mbit high-speed asynchronous SRAM. Designed for applications requiring fast data access, it boasts a maximum access time of just 10 ns. This product operates at a supply voltage of 1.8V, making it ideal for low-power systems. It supports a simple interface, allowing for easy integration into various digital systems. Enhanced data integrity is assured through support for write cycles and concurrent read operations, making it suitable for high-demand environments.

The CY7C1411JV18 is a 2-Mbit synchronous SRAM that offers high speed and low latency. Its access time is optimized for high-performance applications, reaching speeds of up to 10 ns as well. The device is designed with a flexible interface that accommodates both burst and non-burst operations, increasing data throughput for memory-intensive tasks. Like its counterparts, it operates on a low voltage, ensuring minimal power consumption.

Next, the CY7C1426JV18 also belongs to Cypress's high-performance SRAM family, providing 2-Mbit storage capacity with excellent read and write performance characteristics. This SRAM features an advanced design that supports pipelined operations, allowing multiple memory accesses to occur simultaneously. This feature effectively maximizes data transmission rates, making it particularly appealing for applications needing rapid data processing.

Finally, the CY7C1413JV18 offers 1-Mbit of SRAM capacity optimized for speed and efficiency. With an access time of 9 ns, it is among the fastest products in its category. The device features advanced functionalities enabling compatibility with various hardware configurations, thus facilitating its use in a wide array of embedded systems.

All these SRAM devices feature low power consumption, making them suitable for battery-operated devices and energy-efficient applications. Their ability to operate at lower voltages while maintaining high performance is a key characteristic that aligns with modern design requirements. The combination of speed, low power, and flexibility makes the CY7C1415JV18, CY7C1411JV18, CY7C1426JV18, and CY7C1413JV18 highly sought after in industries ranging from telecommunications to consumer electronics, solidifying Cypress's reputation as a leader in memory solutions.