Cypress CY7C1411JV18 Identification Register Definitions, Scan Register Sizes, Instruction Codes

Page 17

CY7C1411JV18, CY7C1426JV18

CY7C1413JV18, CY7C1415JV18

Identification Register Definitions

Instruction Field

 

Value

 

Description

CY7C1411JV18

CY7C1426JV18

CY7C1413JV18

CY7C1415JV18

 

 

Revision Number

000

000

000

000

Version number.

(31:29)

 

 

 

 

 

Cypress Device ID

11010011011000111

11010011011001111

11010011011010111

11010011011100111

Defines the type of

(28:12)

 

 

 

 

SRAM.

Cypress JEDEC ID

00000110100

00000110100

00000110100

00000110100

Allows unique

(11:1)

 

 

 

 

identification of

 

 

 

 

 

SRAM vendor.

ID Register

1

1

1

1

Indicates the

Presence (0)

 

 

 

 

presence of an ID

 

 

 

 

 

register.

Scan Register Sizes

Register Name

Bit Size

Instruction

3

 

 

Bypass

1

 

 

ID

32

 

 

Boundary Scan

109

 

 

Instruction Codes

Instruction

Code

Description

EXTEST

000

Captures the input and output ring contents.

 

 

 

IDCODE

001

Loads the ID register with the vendor ID code and places the register between TDI and TDO.

 

 

This operation does not affect SRAM operation.

SAMPLE Z

010

Captures the input and output contents. Places the boundary scan register between TDI and

 

 

TDO. Forces all SRAM output drivers to a High-Z state.

RESERVED

011

Do Not Use: This instruction is reserved for future use.

 

 

 

SAMPLE/PRELOAD

100

Captures the input and output ring contents. Places the boundary scan register between TDI

 

 

and TDO. Does not affect the SRAM operation.

RESERVED

101

Do Not Use: This instruction is reserved for future use.

 

 

 

RESERVED

110

Do Not Use: This instruction is reserved for future use.

 

 

 

BYPASS

111

Places the bypass register between TDI and TDO. This operation does not affect SRAM

 

 

operation.

Document Number: 001-12557 Rev. *C

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Contents Configurations FeaturesFunctional Description Selection GuideDoff Logic Block Diagram CY7C1411JV18Logic Block Diagram CY7C1426JV18 Logic Block Diagram CY7C1415JV18 Logic Block Diagram CY7C1413JV18Ball Fbga 15 x 17 x 1.4 mm Pinout Pin ConfigurationCY7C1411JV18 4M x CY7C1426JV18 4M xCY7C1415JV18 1M x CY7C1413JV18 2M xWPS BWS Pin Name Pin Description Pin DefinitionsPower Supply Inputs for the Outputs of the Device Power Supply Inputs to the Core of the DeviceIs Referenced With Respect to TDO for JtagFunctional Overview Depth Expansion Application ExampleProgrammable Impedance Echo ClocksWrite Cycle Descriptions Truth TableOperation CommentsBWS0 Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Electrical Characteristics TAP Controller Block DiagramTAP Timing and Test Conditions TAP AC Switching CharacteristicsInstruction Codes Identification Register DefinitionsScan Register Sizes Bit # Bump ID Boundary Scan OrderDLL Constraints Power Up Sequence in QDR-II SramPower Up Sequence Maximum Ratings Electrical CharacteristicsDC Electrical Characteristics AC Electrical Characteristics Thermal Resistance CapacitanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitHigh Switching CharacteristicsLOW DLL TimingRead/Write/Deselect Sequence 27, 28 Switching WaveformsOrdering Information 200 Ball Fbga 15 x 17 x 1.40 mm Package DiagramWorldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal Information

CY7C1413JV18, CY7C1426JV18, CY7C1411JV18, CY7C1415JV18 specifications

Cypress Semiconductor, known for its innovative memory solutions, offers a range of high-performance SRAM products suitable for a variety of applications. Among these are the CY7C1415JV18, CY7C1411JV18, CY7C1426JV18, and CY7C1413JV18, which feature advanced technologies and robust performance characteristics.

The CY7C1415JV18 is a 4-Mbit high-speed asynchronous SRAM. Designed for applications requiring fast data access, it boasts a maximum access time of just 10 ns. This product operates at a supply voltage of 1.8V, making it ideal for low-power systems. It supports a simple interface, allowing for easy integration into various digital systems. Enhanced data integrity is assured through support for write cycles and concurrent read operations, making it suitable for high-demand environments.

The CY7C1411JV18 is a 2-Mbit synchronous SRAM that offers high speed and low latency. Its access time is optimized for high-performance applications, reaching speeds of up to 10 ns as well. The device is designed with a flexible interface that accommodates both burst and non-burst operations, increasing data throughput for memory-intensive tasks. Like its counterparts, it operates on a low voltage, ensuring minimal power consumption.

Next, the CY7C1426JV18 also belongs to Cypress's high-performance SRAM family, providing 2-Mbit storage capacity with excellent read and write performance characteristics. This SRAM features an advanced design that supports pipelined operations, allowing multiple memory accesses to occur simultaneously. This feature effectively maximizes data transmission rates, making it particularly appealing for applications needing rapid data processing.

Finally, the CY7C1413JV18 offers 1-Mbit of SRAM capacity optimized for speed and efficiency. With an access time of 9 ns, it is among the fastest products in its category. The device features advanced functionalities enabling compatibility with various hardware configurations, thus facilitating its use in a wide array of embedded systems.

All these SRAM devices feature low power consumption, making them suitable for battery-operated devices and energy-efficient applications. Their ability to operate at lower voltages while maintaining high performance is a key characteristic that aligns with modern design requirements. The combination of speed, low power, and flexibility makes the CY7C1415JV18, CY7C1411JV18, CY7C1426JV18, and CY7C1413JV18 highly sought after in industries ranging from telecommunications to consumer electronics, solidifying Cypress's reputation as a leader in memory solutions.
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