Cypress CY7C1346H manual Maximum Ratings, Operating Range, Ambient Range

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CY7C1346H

Maximum Ratings

(Above which the useful life may be impaired. For user guide- lines, not tested.)

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

 

Power Applied

–55°C to +125°C

Supply Voltage on VDD Relative to GND

–0.5V to +4.6V

Supply Voltage on VDDQ Relative to GND

–0.5V to +VDD

DC Voltage Applied to Outputs

 

 

in Tri-State

–0.5V to VDDQ + 0.5V

Electrical Characteristics Over the Operating Range [8, 9]

DC Input Voltage

–0.5V to VDD + 0.5V

Current into Outputs (LOW)

20 mA

Static Discharge Voltage

>2001V

(per MIL-STD-883, Method 3015)

 

Latch-up Current

>200 mA

Operating Range

 

Ambient

 

 

Range

Temperature

VDD

VDDQ

Commercial

0°C to +70°C

3.3V –5%/+10%

2.5V –5%

 

 

 

to VDD

Industrial

-40°C to +85°C

 

Parameter

Description

Test Conditions

Min.

Max.

Unit

VDD

Power Supply Voltage

 

3.135

3.6

V

VDDQ

I/O Supply Voltage

for 3.3V I/O

3.135

VDD

V

 

 

for 2.5V I/O

2.375

2.625

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

for 3.3V I/O, IOH = –4.0 mA

2.4

 

V

 

 

for 2.5V I/O, IOH = –1.0 mA

2.0

 

 

VOL

Output LOW Voltage

for 3.3V I/O, IOL = 8.0 mA

 

0.4

V

 

 

for 2.5V I/O, IOL = 1.0 mA

 

0.4

 

VIH

Input HIGH Voltage[8]

for 3.3V I/O

2.0

VDD + 0.3V

V

 

 

for 2.5V I/O

1.7

VDD + 0.3V

V

VIL

Input LOW Voltage[8]

for 3.3V I/O

–0.3

0.8

V

 

 

for 2.5V I/O

–0.3

0.7

V

 

 

 

 

 

 

IX

Input Leakage Current

GND VI VDDQ

–5

5

A

 

except ZZ and MODE

 

 

 

 

 

Input Current of MODE

Input = VSS

–30

 

A

 

 

Input = VDD

 

5

A

 

Input Current of ZZ

Input = VSS

–5

 

A

 

 

Input = VDD

 

30

A

IOZ

Output Leakage Current

GND VI VDDQ, Output Disabled

–5

5

A

IDD

VDD Operating Supply Current

VDD = Max., IOUT = 0 mA,

 

240

mA

 

 

f = fMAX = 1/tCYC

 

 

 

ISB1

Automatic CS Power-down

VDD = Max, Device Deselected, VIN VIH or

 

100

mA

 

Current—TTL Inputs

VIN VIL, f = fMAX = 1/tCYC

 

 

 

ISB2

Automatic CS Power-down

VDD = Max, Device Deselected, VIN 0.3V or

 

40

mA

 

Current—CMOS Inputs

VIN > VDDQ – 0.3V, f = 0

 

 

 

ISB3

Automatic CS Power-down

VDD = Max, Device Deselected, or VIN 0.3V

 

85

mA

 

Current—CMOS Inputs

or VIN > VDDQ – 0.3V, f = fMAX = 1/tCYC

 

 

 

ISB4

Automatic CS Power-down

VDD = Max, Device Deselected, VIN VIH or

 

45

mA

 

Current—TTL Inputs

VIN VIL, f = 0

 

 

 

Notes:

8.Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (Pulse width less than tCYC/2).

9.TPower-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

Document #: 38-05672 Rev. *B

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Contents Cypress Semiconductor Corporation FeaturesLogic Block Diagram Pin Configuration Selection GuideCY7C1346H 166 MHz UnitPower supply inputs to the core of the device Pin DefinitionsName Description Byte Write Select Inputs, active LOW . Qualified withFunctional Overview Interleaved Burst Address Table Mode = Floating or VDD Linear Burst Address Table Mode = GNDZZ Mode Electrical Characteristics Burst SequencesNext Cycle Add. Used Adsp Adsc ADV Write CLKTruth Table for Read/Write2 FunctionAmbient Range Maximum RatingsOperating Range AC Test Loads and Waveforms Capacitance10Thermal Resistance10 Switching Characteristics Over the Operating Range 11 Switching Waveforms Read Cycle Timing17Write Cycle Timing17 ADVRead/Write Cycle Timing17, 19 CLZZZ Mode Timing 21 DON’T CarePin Tqfp 14 x 20 x 1.4 mm Package DiagramsOrdering Information Issue Date Orig. Description of Change Document HistoryPCI RXU