Cypress CY7C0837AV Maximum Ratings, Operating Range, Electrical Characteristics, Capacitance

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CY7C0837AV, CY7C0830AV CY7C0831AV, CY7C0832AV CY7C0832BV, CY7C0833AV

Maximum Ratings

Exceeding maximum ratings[23] may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

 

Power Applied

–55°C to +125°C

Supply Voltage to Ground Potential

–0.5V to +4.6V

DC Voltage Applied to

 

 

Outputs in High-Z State

–0.5V to VDD + 0.5V

DC Input Voltage

–0.5V to V

+ 0.5V[24]

 

DD

 

Output Current into Outputs (LOW)

20 mA

Static Discharge Voltage

> 2000V

(JEDEC JESD22-A114-2000B)

 

Latch Up Current

 

> 200 mA

Operating Range

 

 

 

 

Range

Ambient

VDD

Temperature

Commercial

0°C to +70°C

3.3V±165 mV

 

 

 

Industrial

–40°C to +85°C

3.3V±165 mV

 

 

 

Electrical Characteristics

Over the Operating Range

Parameter

Description

 

 

 

 

-167

 

 

-133

 

 

-100

 

Unit

 

 

 

 

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

VOH

Output HIGH Voltage (VDD = Min., IOH= –4.0 mA)

2.4

 

 

2.4

 

 

2.4

 

 

V

VOL

Output LOW Voltage (VDD = Min., IOL= +4.0 mA)

 

 

0.4

 

 

0.4

 

 

0.4

V

VIH

Input HIGH Voltage

 

 

 

 

2.0

 

 

2.0

 

 

2.0

 

 

V

VIL

Input LOW Voltage

 

 

 

 

 

 

0.8

 

 

0.8

 

 

0.8

V

IOZ

Output Leakage Current

 

 

 

 

–10

 

10

–10

 

10

–10

 

10

μA

IIX1

Input Leakage Current Except TDI, TMS,

MRST

 

–10

 

10

–10

 

10

–10

 

10

μA

IIX2

Input Leakage Current TDI, TMS,

MRST

 

–0.1

 

1.0

–0.1

 

1.0

–0.1

 

1.0

mA

ICC

Operating Current for

CY7C0837AV

 

225

300

 

225

300

 

 

 

mA

 

(VDD = Max., IOUT = 0 mA), Outputs

CY7C0830AV

 

 

 

 

 

 

 

 

 

 

 

Disabled

CY7C0831AV

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C0832AV

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C0832BV

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C0833AV

 

 

 

 

270

400

 

200

310

mA

ISB1[25]

Standby Current (Both Ports TTL Level)

 

90

115

 

90

115

 

90

115

mA

 

CEL and CER VIH, f = fMAX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB2[25]

Standby Current (One Port TTL Level)

 

160

210

 

160

210

 

160

210

mA

 

CEL CER VIH, f = fMAX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB3[25]

Standby Current (Both Ports CMOS Level)

 

55

75

 

55

75

 

55

75

mA

 

CEL and CER VDD – 0.2V, f = 0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB4[25]

Standby Current (One Port CMOS Level)

 

160

210

 

160

210

 

160

210

mA

 

CEL CER VIH, f = fMAX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB5

Operating Current (VDD = Max, IOUT

CY7C0833AV

 

 

 

 

70

100

 

70

100

mA

 

= 0 mA, f = 0) Outputs Disabled

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Capacitance

Part Number [26]

Parameter

Description

Test Conditions

Max

Unit

CY7C0837AV/CY7C0830AV/CY7C0831AV

CIN

Input Capacitance

TA = 25°C,

13

pF

CY7C0832AV/CY7C0832BV

 

 

f = 1 MHz,

 

 

 

 

VDD = 3.3V

 

 

 

COUT

Output Capacitance

10

pF

 

 

CY7C0833AV

CIN

Input Capacitance

 

22

pF

 

COUT

Output Capacitance

 

20

pF

Notes

23.The voltage on any input or I/O pin can not exceed the power pin during power up.

24.Pulse width < 20 ns.

25.ISB1, ISB2, ISB3 and ISB4 are not applicable for CY7C0833AV because it can not be powered down by using chip enable pins.

26.COUT also references CI/O.

Document #: 38-06059 Rev. *S

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Contents Features Functional DescriptionLogic Block Diagram TrueRAM Array Mirror RegPin Configurations DQ9 L DQ9 RCE1L Pin Definitions Byte Select OperationMaster Reset Mailbox InterruptsAddress Counter and Mask Register Operations Interrupt Operation Example 2, 12, 13, 14, 15Counter Reset Operation Counter Load OperationCounter Increment Operation Counter Hold OperationMask Reset Operation RetransmitMask Readback Operation Counting by TwoCnten ADS Cntrst Mrst CLKPerforming a TAP Reset Ieee 1149.1 Serial Boundary Scan JtagPerforming a Pause/Restart Boundary Scan Hierarchy for 9-Mbit DeviceScan Registers Sizes Register Name Bit Size Instruction Identification CodesInstruction Code Description Electrical Characteristics Maximum RatingsOperating Range CapacitanceSwitching Characteristics Delays Master Reset TimingJtag Timing and Switching Waveforms Switching Waveforms Read Cycle12, 30, 31, 32Bank Select Read34 Read-to-Write-to-Read OE Controlled33, 36, 38 Write with Address Counter Advance39 Readback State of Address Counter or Mask Register43, 44, 45 Lport RportCounter Interrupt and Retransmit 15, 42, 50, 51, 52 Outputs Disabled DeselectedWrite ReadOrdering Information 512K × 18 9M 3.3V Synchronous CY7C0833AV Dual-Port Sram128K × 18 2M 3.3V Synchronous CY7C0831AV Dual-Port Sram 64K × 18 1M 3.3V Synchronous CY7C0830AV Dual-Port SramPackage Diagrams 32K × 18 512K 3.3V Synchronous CY7C0837AV Dual-Port SramPin Thin Quad Flatpack 14 x 14 x 1.4 mm Document History Sales, Solutions, and Legal Information Worldwide Sales and Design Support Products PSoC SolutionsUSB

CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, CY7C0832AV specifications

Cypress Semiconductor, a leader in innovative semiconductor solutions, has developed a range of high-performance SRAM (Static Random Access Memory) products, including the CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV. These devices cater to various applications requiring fast, reliable memory storage.

One of the main features of these SRAMs is their speed. They offer fast access times, which range from 10 to 15 nanoseconds. This rapid access is critical for applications where speed is essential, such as high-speed networking and telecommunications equipment, automotive systems, and industrial controls. The CY7C0837AV, for instance, boasts a 1 Mbit memory capacity, making it suitable for applications requiring a larger data buffer.

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The CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV also support burst mode operations, allowing for faster sequential data access. This feature enhances performance in applications that require continuous data streams, such as video processing and signal processing tasks.

In summary, the Cypress CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV SRAMs provide a combination of high speed, low power consumption, and versatile packaging options. Their advanced technologies and characteristics make them ideal for a wide range of applications, from automotive to industrial systems, solidifying their position as reliable memory solutions in the semiconductor market.