Cypress CY7C0832AV, CY7C0837AV, CY7C0832BV manual Switching Waveforms, Read Cycle12, 30, 31, 32

Page 16

 

 

 

 

CY7C0837AV, CY7C0830AV

 

 

 

 

CY7C0831AV, CY7C0832AV

 

 

 

 

CY7C0832BV, CY7C0833AV

Switching Waveforms

 

 

 

 

tRS

 

Figure 8.

Master Reset

MRST

 

 

 

ALL

tRSF

 

 

 

ADDRESS/

 

 

 

 

DATA

tRSS

 

 

 

LINES

tRSR

 

ALL

INACTIVE

ACTIVE

 

OTHER

 

INPUTS

 

 

 

 

TMS

 

 

 

 

CNTINT

 

 

 

 

INT

 

 

 

 

TDO

 

 

 

 

 

 

 

Figure 9. Read Cycle[12, 30, 31, 32, 33]

 

tCH2

tCYC2

tCL2

 

 

 

 

CLK

 

 

 

 

CE

 

 

 

 

tSC

 

 

 

tHC

tSC

 

 

 

tHC

 

 

 

 

tSB

 

 

 

 

tHB

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BE0–BE1

R/W

 

 

 

 

 

 

tSW

tHW

 

 

 

ADDRESS

tSA

tHA

 

 

 

An

An+1

An+2

 

An+3

 

 

DATAOUT

 

1 Latency

tCD2

tDC

 

 

 

Qn

Qn+1

Qn+2

 

 

 

 

 

tCKLZ

 

tOHZ

tOLZ

 

 

 

 

OE

 

 

 

 

tOE

 

 

 

 

 

Notes

30.OE is asynchronously controlled; all other inputs (excluding MRST and JTAG) are synchronous to the rising clock edge.

31.ADS = CNTEN = LOW, and MRST = CNTRST = CNT/MSK = HIGH.

32.The output is disabled (high-impedance state) by CE = VIH following the next rising edge of the clock.

33.Addresses need not be accessed sequentially because ADS = CNTEN = VIL with CNT/MSK = VIH constantly loads the address on the rising edge of the CLK. Numbers are for reference only.

Document #: 38-06059 Rev. *S

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Contents Features Functional DescriptionLogic Block Diagram TrueRAM Array Mirror RegPin Configurations DQ9 L DQ9 RCE1L Pin Definitions Byte Select OperationMaster Reset Mailbox InterruptsAddress Counter and Mask Register Operations Interrupt Operation Example 2, 12, 13, 14, 15Counter Reset Operation Counter Load OperationCounter Increment Operation Counter Hold OperationMask Reset Operation RetransmitMask Readback Operation Counting by TwoCnten ADS Cntrst Mrst CLKPerforming a TAP Reset Ieee 1149.1 Serial Boundary Scan JtagPerforming a Pause/Restart Boundary Scan Hierarchy for 9-Mbit DeviceInstruction Identification Codes Scan Registers Sizes Register Name Bit SizeInstruction Code Description Electrical Characteristics Maximum RatingsOperating Range CapacitanceSwitching Characteristics Delays Master Reset TimingJtag Timing and Switching Waveforms Switching Waveforms Read Cycle12, 30, 31, 32Bank Select Read34 Read-to-Write-to-Read OE Controlled33, 36, 38 Write with Address Counter Advance39 Readback State of Address Counter or Mask Register43, 44, 45 Lport RportCounter Interrupt and Retransmit 15, 42, 50, 51, 52 Outputs Disabled DeselectedWrite ReadOrdering Information 512K × 18 9M 3.3V Synchronous CY7C0833AV Dual-Port Sram128K × 18 2M 3.3V Synchronous CY7C0831AV Dual-Port Sram 64K × 18 1M 3.3V Synchronous CY7C0830AV Dual-Port SramPackage Diagrams 32K × 18 512K 3.3V Synchronous CY7C0837AV Dual-Port SramPin Thin Quad Flatpack 14 x 14 x 1.4 mm Document History Worldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal InformationUSB

CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, CY7C0832AV specifications

Cypress Semiconductor, a leader in innovative semiconductor solutions, has developed a range of high-performance SRAM (Static Random Access Memory) products, including the CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV. These devices cater to various applications requiring fast, reliable memory storage.

One of the main features of these SRAMs is their speed. They offer fast access times, which range from 10 to 15 nanoseconds. This rapid access is critical for applications where speed is essential, such as high-speed networking and telecommunications equipment, automotive systems, and industrial controls. The CY7C0837AV, for instance, boasts a 1 Mbit memory capacity, making it suitable for applications requiring a larger data buffer.

Another notable feature of these devices is their low power consumption. The SRAMs are designed to operate at low voltages, typically around 3.3V, which greatly reduces the overall power requirements. This characteristic is particularly advantageous for battery-operated devices and portable electronics, as it extends battery life and improves energy efficiency.

Cypress's SRAM offerings incorporate advanced technologies like asynchronous read and write operations, which enable users to access memory without the need for a clock signal. This asynchronous nature allows for simpler system designs and integration, significantly reducing component count and complexity.

In terms of packaging, these SRAMs are available in various formats, including standard DIP and surface-mount options, facilitating easy integration into a range of printed circuit boards. Their footprint and compatibility with existing designs ensure they can be utilized in both new developments and legacy system enhancements.

The CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV also support burst mode operations, allowing for faster sequential data access. This feature enhances performance in applications that require continuous data streams, such as video processing and signal processing tasks.

In summary, the Cypress CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV SRAMs provide a combination of high speed, low power consumption, and versatile packaging options. Their advanced technologies and characteristics make them ideal for a wide range of applications, from automotive to industrial systems, solidifying their position as reliable memory solutions in the semiconductor market.
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