Cypress CY7C0831AV, CY7C0837AV, CY7C0832BV, CY7C0833AV, CY7C0830AV, CY7C0832AV Bank Select Read34

Page 17

 

 

 

 

 

 

CY7C0837AV, CY7C0830AV

 

 

 

 

 

 

CY7C0831AV, CY7C0832AV

 

 

 

 

 

 

CY7C0832BV, CY7C0833AV

Switching Waveforms (continued)

 

 

 

 

 

 

 

 

Figure 10. Bank Select Read[34, 35]

 

 

 

tCYC2

 

 

 

 

 

 

 

tCH2

tCL2

 

 

 

 

 

 

CLK

 

 

 

 

 

 

 

 

 

tSA

tHA

 

 

 

 

 

 

ADDRESS(B1)

A0

A

A

 

A3

A4

 

A5

 

 

1

2

 

 

 

 

 

 

tSC

tHC

 

 

 

 

 

 

CE(B1)

 

 

 

 

 

 

 

 

 

 

tCD2

tSC tHC

tCD2

 

tCKHZ

tCD2

tCKHZ

DATA

 

 

Q0

 

Q1

 

 

Q3

OUT(B1)

 

tHA

 

 

 

 

 

 

 

t

t

 

t

 

t

 

 

SA

 

 

 

 

 

 

 

DC

 

DC

CKLZ

 

ADDRESS

A

A

A

 

A3

A4

 

A5

(B2)

0

1

2

 

 

 

 

 

 

 

tSC

 

tHC

 

 

 

 

CE(B2)

 

 

 

 

 

 

 

 

 

t

t

 

 

 

tCD2

tCKHZ

tCD2

DATAOUT(B2)

SC

HC

 

 

 

 

 

 

 

 

 

 

 

Q

 

Q4

 

 

 

 

 

 

2

 

 

 

 

 

 

 

tCKLZ

 

tCKLZ

 

Figure 11. Read-to-Write-to-Read (OE = LOW)[33, 36, 37, 38, 39]

 

 

t

tCYC2t

 

 

 

 

 

 

 

CH2

CL2

 

 

 

 

 

 

CLK

 

 

 

 

 

 

 

 

CE

 

 

 

 

 

 

 

 

 

tSC

tHC

 

 

 

 

 

 

 

 

tSW

tHW

 

 

 

 

 

R/W

tSW

tHW

 

 

 

 

 

 

 

 

 

 

 

 

 

ADDRESS

An

An+1

An+2

 

An+2

An+3

 

An+4

 

 

 

 

tSD tHD

 

 

 

 

tSA

tHA

 

 

 

 

 

 

 

 

 

 

 

 

DATAIN

 

tCD2

tCKHZ

 

Dn+2

 

 

tCD2

 

 

 

 

 

 

 

Qn

 

 

 

 

 

Q

DATAOUT

 

 

 

 

 

 

 

n+3

 

 

 

 

 

 

tCKLZ

 

 

 

 

 

 

 

 

 

 

 

READ

NO OPERATION

WRITE

READ

 

Notes

34.In this depth-expansion example, B1 represents Bank #1 and B2 is Bank #2; each bank consists of one Cypress FLEx18 device from this data sheet. ADDRESS(B1) = ADDRESS(B2).

35.ADS = CNTEN= BE0 – BE1 = OE = LOW; MRST = CNTRST = CNT/MSK = HIGH.

36.Output state (HIGH, LOW, or high-impedance) is determined by the previous cycle control signals.

37.During “No Operation,” data in memory at the selected address may be corrupted and should be rewritten to ensure data integrity.

38.CE0 = OE = BE0 – BE1 = LOW; CE1 = R/W = CNTRST = MRST = HIGH.

39.CE0 = BE0 – BE1 = R/W = LOW; CE1 = CNTRST = MRST = CNT/MSK = HIGH. When R/W first switches low, because OE = LOW, the Write operation cannot be completed (labelled as no operation). One clock cycle is required to three-state the I/O for the Write operation on the next rising edge of CLK.

Document #: 38-06059 Rev. *S

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Contents Functional Description FeaturesTrue Logic Block DiagramRAM Array Mirror RegDQ9 L DQ9 R Pin ConfigurationsCE1L Byte Select Operation Pin DefinitionsMailbox Interrupts Master ResetAddress Counter and Mask Register Operations Interrupt Operation Example 2, 12, 13, 14, 15Counter Load Operation Counter Reset OperationCounter Increment Operation Counter Hold OperationRetransmit Mask Reset OperationMask Readback Operation Counting by TwoCLK Cnten ADS Cntrst MrstIeee 1149.1 Serial Boundary Scan Jtag Performing a TAP ResetPerforming a Pause/Restart Boundary Scan Hierarchy for 9-Mbit DeviceInstruction Code Description Scan Registers Sizes Register Name Bit SizeInstruction Identification Codes Maximum Ratings Electrical CharacteristicsOperating Range CapacitanceSwitching Characteristics Master Reset Timing DelaysJtag Timing and Switching Waveforms Read Cycle12, 30, 31, 32 Switching WaveformsBank Select Read34 Read-to-Write-to-Read OE Controlled33, 36, 38 Write with Address Counter Advance39 Readback State of Address Counter or Mask Register43, 44, 45 Rport LportCounter Interrupt and Retransmit 15, 42, 50, 51, 52 Deselected Outputs DisabledWrite Read512K × 18 9M 3.3V Synchronous CY7C0833AV Dual-Port Sram Ordering Information128K × 18 2M 3.3V Synchronous CY7C0831AV Dual-Port Sram 64K × 18 1M 3.3V Synchronous CY7C0830AV Dual-Port Sram32K × 18 512K 3.3V Synchronous CY7C0837AV Dual-Port Sram Package DiagramsPin Thin Quad Flatpack 14 x 14 x 1.4 mm Document History USB Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions

CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, CY7C0832AV specifications

Cypress Semiconductor, a leader in innovative semiconductor solutions, has developed a range of high-performance SRAM (Static Random Access Memory) products, including the CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV. These devices cater to various applications requiring fast, reliable memory storage.

One of the main features of these SRAMs is their speed. They offer fast access times, which range from 10 to 15 nanoseconds. This rapid access is critical for applications where speed is essential, such as high-speed networking and telecommunications equipment, automotive systems, and industrial controls. The CY7C0837AV, for instance, boasts a 1 Mbit memory capacity, making it suitable for applications requiring a larger data buffer.

Another notable feature of these devices is their low power consumption. The SRAMs are designed to operate at low voltages, typically around 3.3V, which greatly reduces the overall power requirements. This characteristic is particularly advantageous for battery-operated devices and portable electronics, as it extends battery life and improves energy efficiency.

Cypress's SRAM offerings incorporate advanced technologies like asynchronous read and write operations, which enable users to access memory without the need for a clock signal. This asynchronous nature allows for simpler system designs and integration, significantly reducing component count and complexity.

In terms of packaging, these SRAMs are available in various formats, including standard DIP and surface-mount options, facilitating easy integration into a range of printed circuit boards. Their footprint and compatibility with existing designs ensure they can be utilized in both new developments and legacy system enhancements.

The CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV also support burst mode operations, allowing for faster sequential data access. This feature enhances performance in applications that require continuous data streams, such as video processing and signal processing tasks.

In summary, the Cypress CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV SRAMs provide a combination of high speed, low power consumption, and versatile packaging options. Their advanced technologies and characteristics make them ideal for a wide range of applications, from automotive to industrial systems, solidifying their position as reliable memory solutions in the semiconductor market.
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