Cypress CY7C0837AV, CY7C0832BV, CY7C0833AV manual Read-to-Write-to-Read OE Controlled33, 36, 38

Page 18

 

 

 

 

 

 

CY7C0837AV, CY7C0830AV

 

 

 

 

 

 

CY7C0831AV, CY7C0832AV

 

 

 

 

 

 

CY7C0832BV, CY7C0833AV

Switching Waveforms (continued)

 

 

 

 

 

 

Figure 12. Read-to-Write-to-Read (OE Controlled)[33, 36, 38, 39]

 

 

tCH2

tCYC2

tCL2

 

 

 

 

 

 

 

 

 

 

CLK

 

 

 

 

 

 

 

CE

tSC

tHC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tSW tHW

 

 

 

R/W

tSW

tHW

 

 

 

 

 

ADDRESS

An

 

An+1

An+2

An+3

An+4

An+5

tSA

tHA

 

tSD tHD

 

 

 

 

 

 

 

 

DATAIN

 

 

tCD2

Dn+2

Dn+3

 

 

 

 

 

 

 

 

tCD2

DATAOUT

 

 

 

Qn

 

 

Qn+4

 

 

 

 

tOHZ

 

 

 

OE

 

 

READ

 

WRITE

 

READ

 

 

 

 

 

Figure 13. Read with Address Counter Advance[38]

 

 

tCYC2

 

 

 

 

 

 

tCH2

tCL2

 

 

 

 

 

CLK

 

 

 

 

 

 

 

tSA

 

tHA

 

 

 

 

 

ADDRESS

An

 

 

 

 

 

 

tSAD

 

tHAD

 

 

 

 

 

ADS

 

 

 

 

 

 

 

 

 

 

 

tSAD

tHAD

 

 

CNTEN

 

 

 

 

 

 

 

tSCN

 

tHCN

 

tSCN

tHCN

 

 

 

 

 

 

tCD2

 

 

 

DATAOUT

Qx–1

 

Qx

Qn

Qn+1

Qn+2

Qn+3

 

READ

tDC

READ WITH COUNTER

COUNTER HOLD

READ WITH COUNTER

 

 

EXTERNAL

 

 

 

 

ADDRESS

 

 

 

 

 

Document #: 38-06059 Rev. *S

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Contents Features Functional DescriptionRAM Array Logic Block DiagramTrue Mirror RegPin Configurations DQ9 L DQ9 RCE1L Pin Definitions Byte Select OperationAddress Counter and Mask Register Operations Master ResetMailbox Interrupts Interrupt Operation Example 2, 12, 13, 14, 15Counter Increment Operation Counter Reset OperationCounter Load Operation Counter Hold OperationMask Readback Operation Mask Reset OperationRetransmit Counting by TwoCnten ADS Cntrst Mrst CLKPerforming a Pause/Restart Performing a TAP ResetIeee 1149.1 Serial Boundary Scan Jtag Boundary Scan Hierarchy for 9-Mbit DeviceScan Registers Sizes Register Name Bit Size Instruction Identification CodesInstruction Code Description Operating Range Electrical CharacteristicsMaximum Ratings CapacitanceSwitching Characteristics Delays Master Reset TimingJtag Timing and Switching Waveforms Switching Waveforms Read Cycle12, 30, 31, 32Bank Select Read34 Read-to-Write-to-Read OE Controlled33, 36, 38 Write with Address Counter Advance39 Readback State of Address Counter or Mask Register43, 44, 45 Lport RportCounter Interrupt and Retransmit 15, 42, 50, 51, 52 Write Outputs DisabledDeselected Read128K × 18 2M 3.3V Synchronous CY7C0831AV Dual-Port Sram Ordering Information512K × 18 9M 3.3V Synchronous CY7C0833AV Dual-Port Sram 64K × 18 1M 3.3V Synchronous CY7C0830AV Dual-Port SramPackage Diagrams 32K × 18 512K 3.3V Synchronous CY7C0837AV Dual-Port SramPin Thin Quad Flatpack 14 x 14 x 1.4 mm Document History Sales, Solutions, and Legal Information Worldwide Sales and Design Support Products PSoC SolutionsUSB

CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, CY7C0832AV specifications

Cypress Semiconductor, a leader in innovative semiconductor solutions, has developed a range of high-performance SRAM (Static Random Access Memory) products, including the CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV. These devices cater to various applications requiring fast, reliable memory storage.

One of the main features of these SRAMs is their speed. They offer fast access times, which range from 10 to 15 nanoseconds. This rapid access is critical for applications where speed is essential, such as high-speed networking and telecommunications equipment, automotive systems, and industrial controls. The CY7C0837AV, for instance, boasts a 1 Mbit memory capacity, making it suitable for applications requiring a larger data buffer.

Another notable feature of these devices is their low power consumption. The SRAMs are designed to operate at low voltages, typically around 3.3V, which greatly reduces the overall power requirements. This characteristic is particularly advantageous for battery-operated devices and portable electronics, as it extends battery life and improves energy efficiency.

Cypress's SRAM offerings incorporate advanced technologies like asynchronous read and write operations, which enable users to access memory without the need for a clock signal. This asynchronous nature allows for simpler system designs and integration, significantly reducing component count and complexity.

In terms of packaging, these SRAMs are available in various formats, including standard DIP and surface-mount options, facilitating easy integration into a range of printed circuit boards. Their footprint and compatibility with existing designs ensure they can be utilized in both new developments and legacy system enhancements.

The CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV also support burst mode operations, allowing for faster sequential data access. This feature enhances performance in applications that require continuous data streams, such as video processing and signal processing tasks.

In summary, the Cypress CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV SRAMs provide a combination of high speed, low power consumption, and versatile packaging options. Their advanced technologies and characteristics make them ideal for a wide range of applications, from automotive to industrial systems, solidifying their position as reliable memory solutions in the semiconductor market.
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