Cypress CY7C0831AV Scan Registers Sizes Register Name Bit Size, Instruction Identification Codes

Page 11

CY7C0837AV, CY7C0830AV

CY7C0831AV, CY7C0832AV

CY7C0832BV, CY7C0833AV

 

Figure 5. Scan Chain for 9 Mb Device

 

 

TDO

 

 

TDO

 

 

D2

 

 

TDI

 

 

TDO

 

 

D1

 

 

TDI

 

 

TDI

Table 4. Identification Register Definitions

 

Instruction Field

Value

Description

Revision Number (31:28)

0h

Reserved for version number.

Cypress Device ID (27:12)

C090h

Defines Cypress part number for CY7C0832AV/CY7C0832BV

 

 

 

 

C091h

Defines Cypress part number for CY7C0831AV

 

 

 

 

C093h

Defines Cypress part number for CY7C0830AV

 

 

 

 

C094h

Defines Cypress part number for CY7C0837AV.

 

 

 

Cypress JEDEC ID (11:1)

034h

Allows unique identification of the DP family device vendor.

 

 

 

ID Register Presence (0)

1

Indicates the presence of an ID register.

Table 5. Scan Registers Sizes

 

Register Name

 

Bit Size

 

Instruction

 

4

 

 

 

 

 

Bypass

 

1

 

 

 

 

 

Identification

 

32

 

 

 

 

 

Boundary Scan

 

n[22]

Table 6. Instruction Identification Codes

 

 

 

 

Instruction

Code

 

Description

EXTEST

0000

Captures the Input/Output ring contents. Places the BSR between the TDI and TDO.

 

 

 

BYPASS

1111

Places the BYR between TDI and TDO.

 

 

 

IDCODE

1011

Loads the IDR with the vendor ID code and places the register between TDI and TDO.

 

 

 

HIGHZ

0111

Places BYR between TDI and TDO. Forces all device output drivers to a High-Z state.

 

 

 

CLAMP

0100

Controls boundary to 1/0. Places BYR between TDI and TDO.

 

 

 

SAMPLE/PRELOAD

1000

Captures the input/output ring contents. Places BSR between TDI and TDO.

 

 

 

NBSRST

1100

Resets the non-boundary scan logic. Places BYR between TDI and TDO.

 

 

 

RESERVED

All other codes

Other combinations are reserved. Do not use other than the above.

 

 

 

 

Note

22. See details in the device BSDL file.

Document #: 38-06059 Rev. *S

Page 11 of 28

[+] Feedback

Image 11
Contents Functional Description FeaturesMirror Reg Logic Block DiagramTrue RAM ArrayDQ9 L DQ9 R Pin ConfigurationsCE1L Byte Select Operation Pin DefinitionsInterrupt Operation Example 2, 12, 13, 14, 15 Master ResetMailbox Interrupts Address Counter and Mask Register OperationsCounter Hold Operation Counter Reset OperationCounter Load Operation Counter Increment OperationCounting by Two Mask Reset OperationRetransmit Mask Readback OperationCLK Cnten ADS Cntrst MrstBoundary Scan Hierarchy for 9-Mbit Device Performing a TAP ResetIeee 1149.1 Serial Boundary Scan Jtag Performing a Pause/RestartInstruction Code Description Scan Registers Sizes Register Name Bit SizeInstruction Identification Codes Capacitance Electrical CharacteristicsMaximum Ratings Operating RangeSwitching Characteristics Master Reset Timing DelaysJtag Timing and Switching Waveforms Read Cycle12, 30, 31, 32 Switching WaveformsBank Select Read34 Read-to-Write-to-Read OE Controlled33, 36, 38 Write with Address Counter Advance39 Readback State of Address Counter or Mask Register43, 44, 45 Rport LportCounter Interrupt and Retransmit 15, 42, 50, 51, 52 Read Outputs DisabledDeselected Write64K × 18 1M 3.3V Synchronous CY7C0830AV Dual-Port Sram Ordering Information512K × 18 9M 3.3V Synchronous CY7C0833AV Dual-Port Sram 128K × 18 2M 3.3V Synchronous CY7C0831AV Dual-Port Sram32K × 18 512K 3.3V Synchronous CY7C0837AV Dual-Port Sram Package DiagramsPin Thin Quad Flatpack 14 x 14 x 1.4 mm Document History USB Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions

CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, CY7C0832AV specifications

Cypress Semiconductor, a leader in innovative semiconductor solutions, has developed a range of high-performance SRAM (Static Random Access Memory) products, including the CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV. These devices cater to various applications requiring fast, reliable memory storage.

One of the main features of these SRAMs is their speed. They offer fast access times, which range from 10 to 15 nanoseconds. This rapid access is critical for applications where speed is essential, such as high-speed networking and telecommunications equipment, automotive systems, and industrial controls. The CY7C0837AV, for instance, boasts a 1 Mbit memory capacity, making it suitable for applications requiring a larger data buffer.

Another notable feature of these devices is their low power consumption. The SRAMs are designed to operate at low voltages, typically around 3.3V, which greatly reduces the overall power requirements. This characteristic is particularly advantageous for battery-operated devices and portable electronics, as it extends battery life and improves energy efficiency.

Cypress's SRAM offerings incorporate advanced technologies like asynchronous read and write operations, which enable users to access memory without the need for a clock signal. This asynchronous nature allows for simpler system designs and integration, significantly reducing component count and complexity.

In terms of packaging, these SRAMs are available in various formats, including standard DIP and surface-mount options, facilitating easy integration into a range of printed circuit boards. Their footprint and compatibility with existing designs ensure they can be utilized in both new developments and legacy system enhancements.

The CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV also support burst mode operations, allowing for faster sequential data access. This feature enhances performance in applications that require continuous data streams, such as video processing and signal processing tasks.

In summary, the Cypress CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV SRAMs provide a combination of high speed, low power consumption, and versatile packaging options. Their advanced technologies and characteristics make them ideal for a wide range of applications, from automotive to industrial systems, solidifying their position as reliable memory solutions in the semiconductor market.