Cypress CY7C0833AV, CY7C0837AV manual Readback State of Address Counter or Mask Register43, 44, 45

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CY7C0837AV, CY7C0830AV

CY7C0831AV, CY7C0832AV

CY7C0832BV, CY7C0833AV

Switching Waveforms (continued)

Figure 16. Readback State of Address Counter or Mask Register[43, 44, 45, 46]

CLK

EXTERNAL

ADDRESS A0–A16

	tCYC2
	tCH2	tCL2
tSA	tHA
An

tCA2 or tCM2

An*

INTERNAL ADDRESS

AnAn+1

tSAD tHAD

ADS

tSCN tHCN

CNTEN

DATAOUT

tCD2

tCKHZ

Qx-2

Qx-1

LOAD READBACK INCREMENT

EXTERNAL COUNTER

ADDRESS INTERNAL

ADDRESS

tCKLZ

Qn+1 Qn+2 Qn+3

Notes

43.CE0 = OE = BE0 – BE1 = LOW; CE1 = R/W = CNTRST = MRST = HIGH.

44.Address in output mode. Host must not be driving address bus after tCKLZ in next clock cycle.

45.Address in input mode. Host can drive address bus after tCKHZ.

46.An * is the internal value of the address counter (or the mask register depending on the CNT/MSK level) being Read out on the address lines.

Document #: 38-06059 Rev. *S

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Contents Features Functional DescriptionLogic Block Diagram TrueRAM Array Mirror RegPin Configurations DQ9 L DQ9 RCE1L Pin Definitions Byte Select OperationMaster Reset Mailbox InterruptsAddress Counter and Mask Register Operations Interrupt Operation Example 2, 12, 13, 14, 15Counter Reset Operation Counter Load OperationCounter Increment Operation Counter Hold OperationMask Reset Operation RetransmitMask Readback Operation Counting by TwoCnten ADS Cntrst Mrst CLKPerforming a TAP Reset Ieee 1149.1 Serial Boundary Scan JtagPerforming a Pause/Restart Boundary Scan Hierarchy for 9-Mbit DeviceInstruction Code Description Scan Registers Sizes Register Name Bit SizeInstruction Identification Codes Electrical Characteristics Maximum RatingsOperating Range CapacitanceSwitching Characteristics Delays Master Reset TimingJtag Timing and Switching Waveforms Switching Waveforms Read Cycle12, 30, 31, 32Bank Select Read34 Read-to-Write-to-Read OE Controlled33, 36, 38 Write with Address Counter Advance39 Readback State of Address Counter or Mask Register43, 44, 45 Lport RportCounter Interrupt and Retransmit 15, 42, 50, 51, 52 Outputs Disabled DeselectedWrite ReadOrdering Information 512K × 18 9M 3.3V Synchronous CY7C0833AV Dual-Port Sram128K × 18 2M 3.3V Synchronous CY7C0831AV Dual-Port Sram 64K × 18 1M 3.3V Synchronous CY7C0830AV Dual-Port SramPackage Diagrams 32K × 18 512K 3.3V Synchronous CY7C0837AV Dual-Port SramPin Thin Quad Flatpack 14 x 14 x 1.4 mm Document History USB Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions

CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, CY7C0832AV specifications

Cypress Semiconductor, a leader in innovative semiconductor solutions, has developed a range of high-performance SRAM (Static Random Access Memory) products, including the CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV. These devices cater to various applications requiring fast, reliable memory storage.

One of the main features of these SRAMs is their speed. They offer fast access times, which range from 10 to 15 nanoseconds. This rapid access is critical for applications where speed is essential, such as high-speed networking and telecommunications equipment, automotive systems, and industrial controls. The CY7C0837AV, for instance, boasts a 1 Mbit memory capacity, making it suitable for applications requiring a larger data buffer.

Another notable feature of these devices is their low power consumption. The SRAMs are designed to operate at low voltages, typically around 3.3V, which greatly reduces the overall power requirements. This characteristic is particularly advantageous for battery-operated devices and portable electronics, as it extends battery life and improves energy efficiency.

Cypress's SRAM offerings incorporate advanced technologies like asynchronous read and write operations, which enable users to access memory without the need for a clock signal. This asynchronous nature allows for simpler system designs and integration, significantly reducing component count and complexity.

In terms of packaging, these SRAMs are available in various formats, including standard DIP and surface-mount options, facilitating easy integration into a range of printed circuit boards. Their footprint and compatibility with existing designs ensure they can be utilized in both new developments and legacy system enhancements.

The CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV also support burst mode operations, allowing for faster sequential data access. This feature enhances performance in applications that require continuous data streams, such as video processing and signal processing tasks.

In summary, the Cypress CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV SRAMs provide a combination of high speed, low power consumption, and versatile packaging options. Their advanced technologies and characteristics make them ideal for a wide range of applications, from automotive to industrial systems, solidifying their position as reliable memory solutions in the semiconductor market.