Cypress CY7C0831AV, CY7C0837AV, CY7C0832BV, CY7C0833AV Deselected, Write, Read, Outputs Disabled

Page 23

 

 

 

 

 

CY7C0837AV, CY7C0830AV

 

 

 

 

 

CY7C0831AV, CY7C0832AV

 

 

 

 

 

CY7C0832BV, CY7C0833AV

Switching Waveforms (continued)

 

 

 

 

 

 

Figure 19. MailBox Interrupt Timing [54, 55, 56, 57, 58]

 

 

tCYC2

 

 

 

 

 

tCH2

tCL2

 

 

 

 

 

CLKL

 

 

 

 

 

 

 

tSA

tHA

 

 

 

 

L_PORT

7FFFF

An

An+1

An+2

An+3

ADDRESS

 

 

 

tSINT

 

 

 

INT

R

 

 

 

 

tRINT

 

tCYC2

tCH2 tCL2

CLKR

tSA

tHA

R_PORT

Am

Am+1

7FFFF

Am+3

Am+4

ADDRESS

Table 7. Read/Write and Enable Operation (Any Port) [2, 17, 59, 60, 61]

 

 

 

 

 

 

 

Inputs

 

 

Outputs

Operation

 

OE

 

CLK

 

CE0

CE1

R/W

DQ0 DQ17

 

 

 

 

 

X

 

 

 

 

 

 

H

X

X

High-Z

Deselected

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

X

 

 

 

 

 

 

X

L

X

High-Z

Deselected

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

X

 

 

 

 

 

 

L

H

L

DIN

Write

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L

 

 

 

 

 

 

L

H

H

DOUT

Read

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

H

 

 

X

 

L

H

X

High-Z

Outputs Disabled

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

54.CE0 = OE = ADS = CNTEN = LOW; CE1 = CNTRST = MRST = CNT/MSK = HIGH.

55.Address “7FFFF” is the mailbox location for R_Port of the 9Mb device.

56.L_Port is configured for Write operation, and R_Port is configured for Read operation.

57.At least one byte enable (BE0 – BE1) is required to be active during interrupt operations.

58.Interrupt flag is set with respect to the rising edge of the Write clock, and is reset with respect to the rising edge of the Read clock.

59.OE is an asynchronous input signal.

60.When CE changes state, deselection and Read happen after one cycle of latency.

61.CE0 = OE = LOW; CE1 = R/W = HIGH.

Document #: 38-06059 Rev. *S

Page 23 of 28

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Contents Functional Description FeaturesMirror Reg Logic Block DiagramTrue RAM ArrayDQ9 L DQ9 R Pin ConfigurationsCE1L Byte Select Operation Pin DefinitionsInterrupt Operation Example 2, 12, 13, 14, 15 Master ResetMailbox Interrupts Address Counter and Mask Register OperationsCounter Hold Operation Counter Reset OperationCounter Load Operation Counter Increment OperationCounting by Two Mask Reset OperationRetransmit Mask Readback OperationCLK Cnten ADS Cntrst MrstBoundary Scan Hierarchy for 9-Mbit Device Performing a TAP ResetIeee 1149.1 Serial Boundary Scan Jtag Performing a Pause/RestartInstruction Code Description Scan Registers Sizes Register Name Bit SizeInstruction Identification Codes Capacitance Electrical CharacteristicsMaximum Ratings Operating RangeSwitching Characteristics Master Reset Timing DelaysJtag Timing and Switching Waveforms Read Cycle12, 30, 31, 32 Switching WaveformsBank Select Read34 Read-to-Write-to-Read OE Controlled33, 36, 38 Write with Address Counter Advance39 Readback State of Address Counter or Mask Register43, 44, 45 Rport LportCounter Interrupt and Retransmit 15, 42, 50, 51, 52 Read Outputs DisabledDeselected Write64K × 18 1M 3.3V Synchronous CY7C0830AV Dual-Port Sram Ordering Information512K × 18 9M 3.3V Synchronous CY7C0833AV Dual-Port Sram 128K × 18 2M 3.3V Synchronous CY7C0831AV Dual-Port Sram32K × 18 512K 3.3V Synchronous CY7C0837AV Dual-Port Sram Package DiagramsPin Thin Quad Flatpack 14 x 14 x 1.4 mm Document History USB Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions

CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, CY7C0832AV specifications

Cypress Semiconductor, a leader in innovative semiconductor solutions, has developed a range of high-performance SRAM (Static Random Access Memory) products, including the CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV. These devices cater to various applications requiring fast, reliable memory storage.

One of the main features of these SRAMs is their speed. They offer fast access times, which range from 10 to 15 nanoseconds. This rapid access is critical for applications where speed is essential, such as high-speed networking and telecommunications equipment, automotive systems, and industrial controls. The CY7C0837AV, for instance, boasts a 1 Mbit memory capacity, making it suitable for applications requiring a larger data buffer.

Another notable feature of these devices is their low power consumption. The SRAMs are designed to operate at low voltages, typically around 3.3V, which greatly reduces the overall power requirements. This characteristic is particularly advantageous for battery-operated devices and portable electronics, as it extends battery life and improves energy efficiency.

Cypress's SRAM offerings incorporate advanced technologies like asynchronous read and write operations, which enable users to access memory without the need for a clock signal. This asynchronous nature allows for simpler system designs and integration, significantly reducing component count and complexity.

In terms of packaging, these SRAMs are available in various formats, including standard DIP and surface-mount options, facilitating easy integration into a range of printed circuit boards. Their footprint and compatibility with existing designs ensure they can be utilized in both new developments and legacy system enhancements.

The CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV also support burst mode operations, allowing for faster sequential data access. This feature enhances performance in applications that require continuous data streams, such as video processing and signal processing tasks.

In summary, the Cypress CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV SRAMs provide a combination of high speed, low power consumption, and versatile packaging options. Their advanced technologies and characteristics make them ideal for a wide range of applications, from automotive to industrial systems, solidifying their position as reliable memory solutions in the semiconductor market.