Cypress CY7C0832BV Package Diagrams, 32K × 18 512K 3.3V Synchronous CY7C0837AV Dual-Port Sram

Page 25

 

 

 

 

 

CY7C0837AV, CY7C0830AV

 

 

 

 

 

 

 

 

 

 

CY7C0831AV, CY7C0832AV

 

 

 

 

 

CY7C0832BV, CY7C0833AV

 

 

 

 

 

 

 

Ordering Information

 

 

 

 

32K × 18 (512K) 3.3V Synchronous CY7C0837AV Dual-Port SRAM

 

 

 

 

 

 

 

 

 

Speed

Ordering Code

Package

Package Type

Operating

(MHz)

Diagram

Range

 

 

 

 

167

CY7C0837AV-167BBC

51-85141

144-Ball Grid Array (13 x 13 x 1.6 mm) with 1 mm pitch

Commercial

 

 

 

 

 

133

CY7C0837AV-133BBC

51-85141

144-Ball Grid Array (13 x 13 x 1.6 mm) with 1 mm pitch

Commercial

 

 

 

 

 

 

CY7C0837AV-133BBI

51-85141

144-Ball Grid Array (13 x 13 x 1.6 mm) with 1 mm pitch

Industrial

 

 

 

 

 

 

 

 

Package Diagrams

Figure 20. 144-Ball FBGA (13 x 13 x 1.6 mm) (51-85141)

TOP VIEW

A1 CORNER

 

 

1

2

3

4

5

6

7

8

9 10 11 12

 

 

A

 

 

 

 

 

 

 

 

 

 

B

 

 

 

 

 

 

 

 

 

 

C

 

 

 

 

 

 

 

 

 

 

D

 

 

 

 

 

 

 

 

13.00±0.10

 

E

 

 

 

 

 

 

 

 

 

F

 

 

 

 

 

 

 

 

 

 

G

 

 

 

 

 

 

 

 

 

 

H

 

 

 

 

 

 

 

 

 

 

J

 

 

 

 

 

 

 

 

 

 

K

 

 

 

 

 

 

 

 

 

 

L

 

 

 

 

 

 

 

 

 

 

M

 

 

 

 

 

 

 

 

A

 

 

 

 

 

 

 

 

 

 

 

B

 

 

 

13.00±0.10

 

 

0.25 C

0.70±0.05

 

 

 

 

 

 

 

 

1.60MAX.

/ /

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SEATING PLANE

 

0.36

C

 

 

 

 

 

 

 

0.40±0.05

 

 

 

 

 

 

 

 

 

0.15 C

 

 

 

BOTTOM VIEW

 

 

 

 

 

 

 

 

 

 

 

Ø0.05 M C

 

 

 

 

 

 

 

 

 

 

Ø0.25 M C A B

 

 

 

 

 

 

 

 

 

Ø0.50

 

+0.10

 

 

 

 

 

 

 

 

 

(144X)

 

 

 

 

 

 

 

 

 

 

-0.05

 

 

 

 

 

 

 

 

12 11 10

9

8

7

6

5

4

3

2

1

 

 

 

 

 

 

 

 

 

 

 

 

A

 

 

 

 

 

 

 

 

 

 

 

 

B

 

 

 

 

 

 

 

 

 

 

 

 

C

 

 

1.00

 

 

 

 

 

 

 

 

 

D

13.00±0.10

11.00

5.50

 

 

 

 

 

 

 

 

E

 

 

 

 

 

 

 

 

K

 

 

 

 

 

 

 

 

 

 

 

 

F

 

 

 

 

 

 

 

 

 

 

 

 

G

 

 

 

 

 

 

 

 

 

 

 

 

H

 

 

 

 

 

 

 

 

 

 

 

 

J

 

 

 

 

 

 

 

 

 

 

 

 

L

 

 

 

 

 

 

 

 

 

 

 

 

M

A

 

 

5.50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.00

 

 

 

 

 

 

 

 

 

11.00

 

 

 

 

 

 

 

B

 

13.00±0.10

 

 

 

 

 

 

 

0.15(4X)

 

 

 

 

 

DIMENSIONS IN MILLIMETERS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

REFERENCE JEDEC: PUBLICATION 95

DESIGN GUIDE 4.14D

PKG. WEIGHT: 0.53 gms

51-85141-*B

Document #: 38-06059 Rev. *S

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Contents Functional Description FeaturesTrue Logic Block DiagramRAM Array Mirror RegDQ9 L DQ9 R Pin ConfigurationsCE1L Byte Select Operation Pin DefinitionsMailbox Interrupts Master ResetAddress Counter and Mask Register Operations Interrupt Operation Example 2, 12, 13, 14, 15Counter Load Operation Counter Reset OperationCounter Increment Operation Counter Hold OperationRetransmit Mask Reset OperationMask Readback Operation Counting by TwoCLK Cnten ADS Cntrst MrstIeee 1149.1 Serial Boundary Scan Jtag Performing a TAP ResetPerforming a Pause/Restart Boundary Scan Hierarchy for 9-Mbit DeviceInstruction Identification Codes Scan Registers Sizes Register Name Bit SizeInstruction Code Description Maximum Ratings Electrical CharacteristicsOperating Range CapacitanceSwitching Characteristics Master Reset Timing DelaysJtag Timing and Switching Waveforms Read Cycle12, 30, 31, 32 Switching WaveformsBank Select Read34 Read-to-Write-to-Read OE Controlled33, 36, 38 Write with Address Counter Advance39 Readback State of Address Counter or Mask Register43, 44, 45 Rport LportCounter Interrupt and Retransmit 15, 42, 50, 51, 52 Deselected Outputs DisabledWrite Read512K × 18 9M 3.3V Synchronous CY7C0833AV Dual-Port Sram Ordering Information128K × 18 2M 3.3V Synchronous CY7C0831AV Dual-Port Sram 64K × 18 1M 3.3V Synchronous CY7C0830AV Dual-Port Sram32K × 18 512K 3.3V Synchronous CY7C0837AV Dual-Port Sram Package DiagramsPin Thin Quad Flatpack 14 x 14 x 1.4 mm Document History Worldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal InformationUSB

CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, CY7C0832AV specifications

Cypress Semiconductor, a leader in innovative semiconductor solutions, has developed a range of high-performance SRAM (Static Random Access Memory) products, including the CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV. These devices cater to various applications requiring fast, reliable memory storage.

One of the main features of these SRAMs is their speed. They offer fast access times, which range from 10 to 15 nanoseconds. This rapid access is critical for applications where speed is essential, such as high-speed networking and telecommunications equipment, automotive systems, and industrial controls. The CY7C0837AV, for instance, boasts a 1 Mbit memory capacity, making it suitable for applications requiring a larger data buffer.

Another notable feature of these devices is their low power consumption. The SRAMs are designed to operate at low voltages, typically around 3.3V, which greatly reduces the overall power requirements. This characteristic is particularly advantageous for battery-operated devices and portable electronics, as it extends battery life and improves energy efficiency.

Cypress's SRAM offerings incorporate advanced technologies like asynchronous read and write operations, which enable users to access memory without the need for a clock signal. This asynchronous nature allows for simpler system designs and integration, significantly reducing component count and complexity.

In terms of packaging, these SRAMs are available in various formats, including standard DIP and surface-mount options, facilitating easy integration into a range of printed circuit boards. Their footprint and compatibility with existing designs ensure they can be utilized in both new developments and legacy system enhancements.

The CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV also support burst mode operations, allowing for faster sequential data access. This feature enhances performance in applications that require continuous data streams, such as video processing and signal processing tasks.

In summary, the Cypress CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV SRAMs provide a combination of high speed, low power consumption, and versatile packaging options. Their advanced technologies and characteristics make them ideal for a wide range of applications, from automotive to industrial systems, solidifying their position as reliable memory solutions in the semiconductor market.
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