Cypress CY14B104K AC Switching Characteristics, Switching Waveforms, Parameters Sram Read Cycle

Page 17

 

 

 

 

PRELIMINARY

 

CY14B104K, CY14B104M

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AC Switching Characteristics

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameters

Description

20 ns

25 ns

45 ns

Unit

Cypress

Alt

Min

Max

Min

Max

Min

Max

Parameters

Parameters

 

 

 

 

 

 

 

 

 

 

SRAM Read Cycle

 

 

 

 

 

 

 

 

tACE

tACS

Chip Enable Access Time

 

20

 

25

 

45

ns

tRC [16]

tRC

Read Cycle Time

20

 

25

 

45

 

ns

tAA [17]

tAA

Address Access Time

 

20

 

25

 

45

ns

tDOE

tOE

Output Enable to Data Valid

 

10

 

12

 

20

ns

tOHA[17]

tOH

Output Hold After Address Change

3

 

3

 

3

 

ns

tLZCE [14, 18]

tLZ

Chip Enable to Output Active

3

 

3

 

3

 

ns

tHZCE [14, 18]

tHZ

Chip Disable to Output Inactive

 

8

 

10

 

15

ns

tLZOE [14, 18]

tOLZ

Output Enable to Output Active

0

 

0

 

0

 

ns

tHZOE [14, 18]

tOHZ

Output Disable to Output Inactive

 

8

 

10

 

15

ns

tPU [14]

tPA

Chip Enable to Power Active

0

 

0

 

0

 

ns

tPD [14]

tPS

Chip Disable to Power Standby

 

20

 

25

 

45

ns

tDBE

-

 

 

Byte Enable to Data Valid

 

10

 

12

 

20

ns

tLZBE[14]

-

 

 

Byte Enable to Output Active

0

 

0

 

0

 

ns

tHZBE[14]

-

 

 

Byte Disable to Output Inactive

 

8

 

10

 

15

ns

SRAM Write Cycle

 

 

 

 

 

 

 

 

tWC

tWC

Write Cycle Time

20

 

25

 

45

 

ns

tPWE

tWP

Write Pulse Width

15

 

20

 

30

 

ns

tSCE

tCW

Chip Enable To End of Write

15

 

20

 

30

 

ns

tSD

tDW

Data Setup to End of Write

8

 

10

 

15

 

ns

tHD

tDH

Data Hold After End of Write

0

 

0

 

0

 

ns

tAW

tAW

Address Setup to End of Write

15

 

20

 

30

 

ns

tSA

tAS

Address Setup to Start of Write

0

 

0

 

0

 

ns

tHA

tWR

Address Hold After End of Write

0

 

0

 

0

 

ns

tHZWE [14, 18,19]

tWZ

Write Enable to Output Disable

 

8

 

10

 

15

ns

tLZWE [14, 18]

tOW

Output Active after End of Write

3

 

3

 

3

 

ns

tBW

-

 

 

Byte Enable to End of Write

15

 

20

 

30

 

ns

Switching Waveforms

Figure 7. SRAM Read Cycle 1: Address Controlled[16, 17, 20]

 

tRC

Address

Address Valid

 

tAA

Data Output

Previous Data Valid

 

tOHA

Notes

16.WE must be HIGH during SRAM read cycles.

17.Device is continuously selected with CE, OE and BHE / BLE LOW.

18.Measured ±200 mV from steady state output voltage.

19.If WE is LOW when CE goes LOW, the outputs remain in the high impedance state.

20.HSB must remain HIGH during READ and WRITE cycles.

Output Data Valid

Document #: 001-07103 Rev. *K

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Contents Cypress Semiconductor Corporation 198 Champion Court FeaturesFunctional Description Pinouts Sram Read Device OperationSram Write AutoStore OperationHardware Store HSB Operation Hardware Recall Power UpSoftware Recall Software StoreA15 A06 Mode Power Mode SelectionPreventing AutoStore StoreReal Time Clock Operation Data ProtectionNoise Considerations Calibrating the Clock AlarmWatchdog Timer Interrupt Register Power MonitorInterrupts Flags RegisterPF Power Fail Flag WDF Watchdog Timer FlagPFE Power Fail Enable AF Alarm FlagWDF Oscf OscenWDS For the register is 0x7FFF9 0x3FFF9 Time Keeping SecondsTime-base 0x7FFF5 0x3FFF5 Alarm DayWatchdog Write only. Reading it always returns aCenturies 0x7FFF0 0x3FFF0 Flags 0x7FFF2 0x3FFF2 Alarm SecondsThis condition and write 0 to clear this flag Document # 001-07103 Rev. *KRange Ambient Temperature DC Electrical CharacteristicsMaximum Ratings Operating RangeCapacitance Data Retention and EnduranceThermal Resistance AC Test ConditionsHot Temperature 85 oC RTC Backup CurrentRTC Battery Pin Voltage RTC Capacitor Pin Voltage TOCS RTC Oscillator Time to StartSwitching Waveforms AC Switching CharacteristicsParameters Sram Read Cycle Sram Write CycleStandby Active Data Output High Impedance Output Data ValidAddress Valid Data Input Input Data ValidInput Data Valid High Impedance Data Input Data OutputNot applicable for RTC register writes Address Address ValidParameters Description 20 ns 25 ns 45 ns Unit Min Max AutoStore/Power Up RecallSoftware Controlled Store and Recall Cycle Hardware Store Cycle To Output Active Time when write latch not setDescription 20 ns 25 ns 45 ns Unit Min Hardware Store Pulse WidthFor x16 Configuration For x8 ConfigurationInputs and Outputs Mode Power Truth Table For Sram OperationsNvsram Part Numbering Nomenclature CY14 B 104 K ZS P 20 X C TZS Tsop Ordering Information Pin Tsop II Package Diagrams51-85160 TUP Document HistoryPCI UHAGVCH/PYRS Footnote 1 and 8 referenced for Mode selection Table Added 20 ns access speed in Features6 updated Data protection description 6 Updated Starting and stopping the oscillator descriptionUSB Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions