Samsung M471B1G73AH0 AC & DC Output Measurement Levels, Single Ended AC and DC Output Levels

Page 15

Unbuffered SODIMM

datasheet

Rev. 1.0

DDR3 SDRAM

11. AC & DC Output Measurement Levels

11.1 Single Ended AC and DC Output Levels

[ Table 7 ] Single Ended AC and DC output levels

Symbol

Parameter

DDR3-800/1066/1333/1600

Units

NOTE

VOH(DC)

DC output high measurement level (for IV curve linearity)

0.8 x VDDQ

V

 

VOM(DC)

DC output mid measurement level (for IV curve linearity)

0.5 x VDDQ

V

 

VOL(DC)

DC output low measurement level (for IV curve linearity)

0.2 x VDDQ

V

 

VOH(AC)

AC output high measurement level (for output SR)

VTT + 0.1 x VDDQ

V

1

VOL(AC)

AC output low measurement level (for output SR)

VTT - 0.1 x VDDQ

V

1

NOTE : 1. The swing of +/-0.1 x VDDQ is based on approximately 50% of the static single ended output high or low swing with a driver impedance of 40Ω and an effective test load of 25Ω to VTT=VDDQ/2.

11.2 Differential AC and DC Output Levels

[ Table 8 ] Differential AC and DC output levels

Symbol

Parameter

DDR3-800/1066/1333/1600

Units

NOTE

VOHdiff(AC)

AC differential output high measurement level (for output SR)

+0.2 x VDDQ

V

1

VOLdiff(AC)

AC differential output low measurement level (for output SR)

-0.2 x VDDQ

V

1

NOTE : 1. The swing of +/-0.2xVDDQis based on approximately 50% of the static single ended output high or low swing with a driver impedance of 40Ω and an effective test load of 25Ω to VTT=VDDQ/2 at each of the differential outputs.

11.3 Single-ended Output Slew Rate

With the reference load for timing measurements, output slew rate for falling and rising edges is defined and measured between VOL(AC) and VOH(AC) for single ended signals as shown in below.

[ Table 9 ] Single ended Output slew rate definition

Description

Measured

 

Defined by

From

To

 

 

 

 

 

Single ended output slew rate for rising edge

VOL(AC)

VOH(AC)

 

VOH(AC)-VOL(AC)

 

 

Delta TRse

 

 

 

 

 

 

 

 

 

 

Single ended output slew rate for falling edge

VOH(AC)

VOL(AC)

 

VOH(AC)-VOL(AC)

 

 

Delta TFse

 

 

 

 

 

 

 

 

 

 

NOTE : Output slew rate is verified by design and characterization, and may not be subject to production test.

[ Table 10 ] Single ended output slew rate

Parameter

Symbol

DDR3-800

DDR3-1066

DDR3-1333

DDR3-1600

Units

Min

Max

Min

Max

Min

Max

Min

Max

 

 

 

Single ended output slew rate

SRQse

2.5

5

2.5

5

2.5

5

2.5

5

V/ns

 

 

 

 

 

 

 

 

 

 

 

Description : SR : Slew Rate

Q : Query Output (like in DQ, which stands for Data-in, Query-Output)

se : Single-ended Signals For Ron = RZQ/7 setting

VOHdiff(AC)

VTT

VOLdiff(AC)

delta TFdiff

delta TRdiff

Figure 6. Single-ended output slew rate definition

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Contents Datasheet Rev HistoryFirst Release Jul Kim Table Of Contents Key Features Address ConfigurationDDR3 Unbuffered Sodimm Ordering Information Pin Front Back X64 Dimm Pin Configurations Front side/Back SidePin Name Description Number Pin DescriptionInput/Output Functional Description Symbol Type Function8GB, 1Gx64 Module Populated as 2 ranks of x8 DDR3 SDRAMs Function Block DiagramAbsolute Maximum DC Ratings Dram Component Operating Temperature RangeAbsolute Maximum Ratings AC & DC Operating ConditionsAC & DC Input Measurement Levels 10.1 AC & DC Logic Input Levels for Single-ended SignalsIllustration of Vrefdc tolerance and Vref ac-noise limits Vref Tolerances+0.2 AC and DC Logic Input Levels for Differential SignalsDifferential Signals Definition Symbol Parameter DDR3-800/1066/1333/1600 UnitTime Single-ended Requirements for Differential SignalsParameter DDR3-800/1066/1333/1600 Unit Min Max Slew Rate Definition for Single Ended Input SignalsSlew rate definition for Differential Input Signals Differential Input Cross Point VoltageSingle-ended Output Slew Rate AC & DC Output Measurement LevelsSingle Ended AC and DC Output Levels Differential AC and DC Output LevelsDelta TFdiff Differential Output Slew RateDifferential output slew rate for rising edge Delta TRdiff Differential output slew rate for falling edgeSymbol Description Dimm IDD specification definitionDatasheet M471B1G73AH0 8GB 1Gx64 Module IDD Spec TableDDR3-1066 DDR3-1333 Input/Output Capacitance14.1 2Rx8 2GB Sodimm M471B1G73AH0 ParameterRefresh Parameters by Device Density Electrical Characteristics and AC timingDDR3-1066 Speed Bins CL-nRCD-nRP DDR3-1333 CL-nRCD-nRP DDR3-1333 Speed BinsDDR3-1600 Speed Bins CL-nRCD-nRP Speed Bin Table Notes Absolute Specification Toper Vddq = VDD = 1.5V +/- 0.075Timing Parameters by Speed Bin Timing Parameters by Speed GradeReset Timing MIN MAX Jitter Notes Timing Parameter Notes ZQCorrection TSens x Tdriftrate + VSens x VdriftrateX 1 + 0.15 x 15 = 0.133 ~~ 128ms 17.1 512Mx8 based 1Gx64 Module 2 Ranks M471B1G73AH0 Physical Dimensions

M471B1G73AH0 specifications

The Samsung M471B1G73AH0 is a high-performance DDR4 SO-DIMM memory module designed for laptops and compact systems. This specific RAM chip showcases a balance of speed, efficiency, and reliability, making it an ideal choice for both everyday users and professionals seeking enhanced system performance.

One of the main features of the M471B1G73AH0 is its capacity. With 8GB of memory, it provides ample space for multitasking, allowing users to run multiple applications simultaneously without experiencing slowdowns. This is particularly beneficial for users who require a robust performance for tasks such as video editing, gaming, or running virtual machines.

The module operates at a frequency of 2400 MHz, tapping into the capabilities of DDR4 technology. This frequency ensures that data can be transferred quickly, enhancing overall system responsiveness. The DDR4 specification also brings improvements in power efficiency compared to its predecessor, DDR3, resulting in lower energy consumption and prolonged battery life in portable devices.

Another notable aspect of the M471B1G73AH0 is its latency. With a CAS latency of CL17, this module strikes a good balance between speed and response time, ensuring that data retrieval and execution are efficient, which is crucial for both applications and system processes.

Samsung’s advanced manufacturing technology is evident in this module, which employs 20nm process technology to produce high-density chips. This not only contributes to lower power consumption but also results in a smaller physical footprint, allowing for increased memory density in compact devices.

In terms of compatibility, the M471B1G73AH0 is designed to support a wide range of platforms. It adheres to the standard SO-DIMM form factor, making it compatible with most laptops and all-in-one systems. This versatility allows users to easily upgrade their existing systems for enhanced performance.

Additionally, the module includes features such as ECC (Error-Correcting Code) capabilities for certain variants, which helps in identifying and correcting memory errors, thereby increasing system reliability—an essential aspect for critical applications.

In conclusion, the Samsung M471B1G73AH0 is a robust DDR4 memory solution that delivers solid performance and reliability. With its 8GB capacity, 2400 MHz frequency, and energy-efficient design, it is suitable for a wide range of computing needs, making it a popular choice among users looking to upgrade their systems for improved efficiency and responsiveness.
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