Samsung M471B1G73AH0 specifications Jitter Notes

Page 29

Unbuffered SODIMM

datasheet

Rev. 1.0

DDR3 SDRAM

16.1 Jitter Notes

Specific Note a Unit ’tCK(avg)’ represents the actual tCK(avg) of the input clock under operation. Unit ’nCK’ represents one clock cycle of the input clock, counting the actual clock edges.ex) tMRD = 4 [nCK] means; if one Mode Register Set command is registered at Tm, another Mode Register Set command may be registered at Tm+4, even if (Tm+4 - Tm) is 4 x tCK(avg) + tERR(4per),min.

Specific Note b These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition

edge to its respective clock signal (CK/CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as the setup and hold are relative to the clock signal crossing that latches the command/address. That is, these parameters should be met whether clock jitter is present or not.

Specific Note c These parameters are measured from a data strobe signal (DQS, DQS) crossing to its respective clock signal (CK, CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as these are relative to the clock signal crossing. That is, these parameters should be met whether clock jitter is present or not.

Specific Note d These parameters are measured from a data signal (DM, DQ0, DQ1, etc.) transition edge to its respective data strobe signal (DQS, DQS) crossing.

Specific Note e For these parameters, the DDR3 SDRAM device supports tnPARAM [nCK] = RU{ tPARAM [ns] / tCK(avg) [ns] }, which is in clock cycles, assuming all input clock jitter specifications are satisfied. For example, the device will support tnRP = RU{tRP / tCK(avg)}, which is in clock cycles, if all input clock jitter specifications are met. This means: For DDR3-800 6-6-6, of which tRP = 15ns, the device will support tnRP = RU{tRP / tCK(avg)} = 6, as long as the input clock jitter specifications are met, i.e. Precharge com- mand at Tm and Active command at Tm+6 is valid even if (Tm+6 - Tm) is less than 15ns due to input clock jitter.

Specific Note f When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(mper),act of the input clock, where 2 <= m <= 12. (output deratings are relative to the SDRAM input clock.)

For example, if the measured jitter into a DDR3-800 SDRAM has tERR(mper),act,min = - 172 ps and tERR(mper),act,max = + 193 ps, then tDQSCK,min(derated) = tDQSCK,min - tERR(mper),act,max = - 400 ps - 193 ps = - 593 ps and tDQSCK,max(der- ated) = tDQSCK,max - tERR(mper),act,min = 400 ps + 172 ps = + 572 ps. Similarly, tLZ(DQ) for DDR3-800 derates to tLZ(DQ),min(derated) = - 800 ps - 193 ps = - 993 ps and tLZ(DQ),max(derated) = 400 ps + 172 ps = + 572 ps. (Caution on the min/max usage!)

Note that tERR(mper),act,min is the minimum measured value of tERR(nper) where 2 <= n <= 12, and tERR(mper),act,max is the maximum measured value of tERR(nper) where 2 <= n <= 12.

Specific Note g When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(per),act of the input clock. (output deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR3-800 SDRAM has tCK(avg),act = 2500 ps, tJIT(per),act,min = - 72 ps and tJIT(per),act,max = + 93 ps, then tRPRE,min(derated) = tRPRE,min + tJIT(per),act,min = 0.9 x tCK(avg),act + tJIT(per),act,min = 0.9 x 2500 ps - 72 ps = + 2178 ps. Similarly, tQH,min(derated) = tQH,min + tJIT(per),act,min = 0.38 x tCK(avg),act + tJIT(per),act,min = 0.38 x 2500 ps - 72 ps = + 878 ps. (Caution on the min/ max usage!)

- 29 -

Image 29
Contents Datasheet First Release Jul Kim RevHistory Table Of Contents DDR3 Unbuffered Sodimm Ordering Information Key FeaturesAddress Configuration Pin Front Back X64 Dimm Pin Configurations Front side/Back SidePin Name Description Number Pin DescriptionInput/Output Functional Description Symbol Type Function8GB, 1Gx64 Module Populated as 2 ranks of x8 DDR3 SDRAMs Function Block DiagramAbsolute Maximum Ratings Dram Component Operating Temperature RangeAC & DC Operating Conditions Absolute Maximum DC RatingsAC & DC Input Measurement Levels 10.1 AC & DC Logic Input Levels for Single-ended SignalsIllustration of Vrefdc tolerance and Vref ac-noise limits Vref TolerancesDifferential Signals Definition AC and DC Logic Input Levels for Differential SignalsSymbol Parameter DDR3-800/1066/1333/1600 Unit +0.2Time Single-ended Requirements for Differential SignalsSlew rate definition for Differential Input Signals Slew Rate Definition for Single Ended Input SignalsDifferential Input Cross Point Voltage Parameter DDR3-800/1066/1333/1600 Unit Min MaxSingle Ended AC and DC Output Levels AC & DC Output Measurement LevelsDifferential AC and DC Output Levels Single-ended Output Slew RateDifferential output slew rate for rising edge Differential Output Slew RateDelta TRdiff Differential output slew rate for falling edge Delta TFdiffSymbol Description Dimm IDD specification definitionDatasheet M471B1G73AH0 8GB 1Gx64 Module IDD Spec Table14.1 2Rx8 2GB Sodimm Input/Output CapacitanceM471B1G73AH0 Parameter DDR3-1066 DDR3-1333Refresh Parameters by Device Density Electrical Characteristics and AC timingDDR3-1066 Speed Bins CL-nRCD-nRP DDR3-1333 CL-nRCD-nRP DDR3-1333 Speed BinsDDR3-1600 Speed Bins CL-nRCD-nRP Speed Bin Table Notes Absolute Specification Toper Vddq = VDD = 1.5V +/- 0.075Timing Parameters by Speed Bin Timing Parameters by Speed GradeReset Timing MIN MAX Jitter Notes X 1 + 0.15 x 15 = 0.133 ~~ 128ms Timing Parameter NotesZQCorrection TSens x Tdriftrate + VSens x Vdriftrate 17.1 512Mx8 based 1Gx64 Module 2 Ranks M471B1G73AH0 Physical Dimensions

M471B1G73AH0 specifications

The Samsung M471B1G73AH0 is a high-performance DDR4 SO-DIMM memory module designed for laptops and compact systems. This specific RAM chip showcases a balance of speed, efficiency, and reliability, making it an ideal choice for both everyday users and professionals seeking enhanced system performance.

One of the main features of the M471B1G73AH0 is its capacity. With 8GB of memory, it provides ample space for multitasking, allowing users to run multiple applications simultaneously without experiencing slowdowns. This is particularly beneficial for users who require a robust performance for tasks such as video editing, gaming, or running virtual machines.

The module operates at a frequency of 2400 MHz, tapping into the capabilities of DDR4 technology. This frequency ensures that data can be transferred quickly, enhancing overall system responsiveness. The DDR4 specification also brings improvements in power efficiency compared to its predecessor, DDR3, resulting in lower energy consumption and prolonged battery life in portable devices.

Another notable aspect of the M471B1G73AH0 is its latency. With a CAS latency of CL17, this module strikes a good balance between speed and response time, ensuring that data retrieval and execution are efficient, which is crucial for both applications and system processes.

Samsung’s advanced manufacturing technology is evident in this module, which employs 20nm process technology to produce high-density chips. This not only contributes to lower power consumption but also results in a smaller physical footprint, allowing for increased memory density in compact devices.

In terms of compatibility, the M471B1G73AH0 is designed to support a wide range of platforms. It adheres to the standard SO-DIMM form factor, making it compatible with most laptops and all-in-one systems. This versatility allows users to easily upgrade their existing systems for enhanced performance.

Additionally, the module includes features such as ECC (Error-Correcting Code) capabilities for certain variants, which helps in identifying and correcting memory errors, thereby increasing system reliability—an essential aspect for critical applications.

In conclusion, the Samsung M471B1G73AH0 is a robust DDR4 memory solution that delivers solid performance and reliability. With its 8GB capacity, 2400 MHz frequency, and energy-efficient design, it is suitable for a wide range of computing needs, making it a popular choice among users looking to upgrade their systems for improved efficiency and responsiveness.