Samsung M471B1G73AH0 specifications DDR3-1066 Speed Bins CL-nRCD-nRP

Page 22

Unbuffered SODIMM

datasheet

Rev. 1.0

DDR3 SDRAM

[ Table 14 ] DDR3-1066 Speed Bins

Speed

 

 

DDR3-1066

 

 

CL-nRCD-nRP

 

 

7 - 7 - 7

Units

NOTE

Parameter

Symbol

min

 

max

 

 

Internal read command to first data

tAA

13.125

 

20

ns

 

 

 

 

 

 

 

 

ACT to internal read or write delay time

tRCD

13.125

 

-

ns

 

 

 

 

 

 

 

 

PRE command period

tRP

13.125

 

-

ns

 

 

 

 

 

 

 

 

ACT to ACT or REF command period

tRC

50.625

 

-

ns

 

 

 

 

 

 

 

 

ACT to PRE command period

tRAS

37.5

 

9*tREFI

ns

 

 

 

 

 

 

 

 

 

CL = 5

CWL = 5

tCK(AVG)

3.0

 

3.3

ns

1,2,3,4,5,9,10

 

 

 

 

 

 

 

CWL = 6

tCK(AVG)

 

Reserved

ns

4

 

 

 

 

 

 

 

 

 

CL = 6

CWL = 5

tCK(AVG)

2.5

 

3.3

ns

1,2,3,5

 

 

 

 

 

 

 

CWL = 6

tCK(AVG)

 

Reserved

ns

1,2,3,4

 

 

 

 

 

 

 

 

 

CL = 7

CWL = 5

tCK(AVG)

 

Reserved

ns

4

 

 

 

 

 

 

 

CWL = 6

tCK(AVG)

1.875

 

<2.5

ns

1,2,3,4,8

 

 

 

 

 

 

 

 

 

 

CL = 8

CWL = 5

tCK(AVG)

 

Reserved

ns

4

 

 

 

 

 

 

 

CWL = 6

tCK(AVG)

1.875

 

<2.5

ns

1,2,3

 

 

 

 

 

 

 

 

 

 

Supported CL Settings

 

 

5, 6,7,8

nCK

 

 

 

 

 

 

 

Supported CWL Settings

 

 

5,6

nCK

 

 

 

 

 

 

 

 

 

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Contents Datasheet History RevFirst Release Jul Kim Table Of Contents Address Configuration Key FeaturesDDR3 Unbuffered Sodimm Ordering Information X64 Dimm Pin Configurations Front side/Back Side Pin Front BackPin Description Pin Name Description NumberSymbol Type Function Input/Output Functional DescriptionFunction Block Diagram 8GB, 1Gx64 Module Populated as 2 ranks of x8 DDR3 SDRAMsAC & DC Operating Conditions Dram Component Operating Temperature RangeAbsolute Maximum Ratings Absolute Maximum DC Ratings10.1 AC & DC Logic Input Levels for Single-ended Signals AC & DC Input Measurement LevelsVref Tolerances Illustration of Vrefdc tolerance and Vref ac-noise limitsSymbol Parameter DDR3-800/1066/1333/1600 Unit AC and DC Logic Input Levels for Differential SignalsDifferential Signals Definition +0.2Single-ended Requirements for Differential Signals TimeDifferential Input Cross Point Voltage Slew Rate Definition for Single Ended Input SignalsSlew rate definition for Differential Input Signals Parameter DDR3-800/1066/1333/1600 Unit Min MaxDifferential AC and DC Output Levels AC & DC Output Measurement LevelsSingle Ended AC and DC Output Levels Single-ended Output Slew RateDelta TRdiff Differential output slew rate for falling edge Differential Output Slew RateDifferential output slew rate for rising edge Delta TFdiffDimm IDD specification definition Symbol DescriptionDatasheet IDD Spec Table M471B1G73AH0 8GB 1Gx64 ModuleM471B1G73AH0 Parameter Input/Output Capacitance14.1 2Rx8 2GB Sodimm DDR3-1066 DDR3-1333Electrical Characteristics and AC timing Refresh Parameters by Device DensityDDR3-1066 Speed Bins CL-nRCD-nRP DDR3-1333 Speed Bins DDR3-1333 CL-nRCD-nRPDDR3-1600 Speed Bins CL-nRCD-nRP Absolute Specification Toper Vddq = VDD = 1.5V +/- 0.075 Speed Bin Table NotesTiming Parameters by Speed Grade Timing Parameters by Speed BinReset Timing MIN MAX Jitter Notes ZQCorrection TSens x Tdriftrate + VSens x Vdriftrate Timing Parameter NotesX 1 + 0.15 x 15 = 0.133 ~~ 128ms Physical Dimensions 17.1 512Mx8 based 1Gx64 Module 2 Ranks M471B1G73AH0

M471B1G73AH0 specifications

The Samsung M471B1G73AH0 is a high-performance DDR4 SO-DIMM memory module designed for laptops and compact systems. This specific RAM chip showcases a balance of speed, efficiency, and reliability, making it an ideal choice for both everyday users and professionals seeking enhanced system performance.

One of the main features of the M471B1G73AH0 is its capacity. With 8GB of memory, it provides ample space for multitasking, allowing users to run multiple applications simultaneously without experiencing slowdowns. This is particularly beneficial for users who require a robust performance for tasks such as video editing, gaming, or running virtual machines.

The module operates at a frequency of 2400 MHz, tapping into the capabilities of DDR4 technology. This frequency ensures that data can be transferred quickly, enhancing overall system responsiveness. The DDR4 specification also brings improvements in power efficiency compared to its predecessor, DDR3, resulting in lower energy consumption and prolonged battery life in portable devices.

Another notable aspect of the M471B1G73AH0 is its latency. With a CAS latency of CL17, this module strikes a good balance between speed and response time, ensuring that data retrieval and execution are efficient, which is crucial for both applications and system processes.

Samsung’s advanced manufacturing technology is evident in this module, which employs 20nm process technology to produce high-density chips. This not only contributes to lower power consumption but also results in a smaller physical footprint, allowing for increased memory density in compact devices.

In terms of compatibility, the M471B1G73AH0 is designed to support a wide range of platforms. It adheres to the standard SO-DIMM form factor, making it compatible with most laptops and all-in-one systems. This versatility allows users to easily upgrade their existing systems for enhanced performance.

Additionally, the module includes features such as ECC (Error-Correcting Code) capabilities for certain variants, which helps in identifying and correcting memory errors, thereby increasing system reliability—an essential aspect for critical applications.

In conclusion, the Samsung M471B1G73AH0 is a robust DDR4 memory solution that delivers solid performance and reliability. With its 8GB capacity, 2400 MHz frequency, and energy-efficient design, it is suitable for a wide range of computing needs, making it a popular choice among users looking to upgrade their systems for improved efficiency and responsiveness.
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