Samsung M471B1G73AH0 specifications DDR3 Unbuffered Sodimm Ordering Information, Key Features

Page 4

Unbuffered SODIMM

datasheet

Rev. 1.0

DDR3 SDRAM

1. DDR3 Unbuffered SODIMM Ordering Information

Part Number2

Density

Organization

Component Composition

Number of

Height

Rank

M471B1G73AH0-CF8/H9

8GB

1Gx64

512Mx8(K4B4G0846A-HC##)*16

2

30mm

 

 

 

 

 

 

NOTE :

1."##" - F8/H9

2.F8 - 1066Mbps 7-7-7 & H9 - 1333Mbps 9-9-9

-DDR3-1333(9-9-9) is backward compatible to DDR3-1066(7-7-7)

2. Key Features

Speed

DDR3-800

DDR3-1066

DDR3-1333

Unit

6-6-6

7-7-7

9-9-9

 

 

tCK(min)

2.5

1.875

1.5

ns

 

 

 

 

 

CAS Latency

6

7

9

tCK

 

 

 

 

 

tRCD(min)

15

13.125

13.5

ns

 

 

 

 

 

tRP(min)

15

13.125

13.5

ns

 

 

 

 

 

tRAS(min)

37.5

37.5

36

ns

 

 

 

 

 

tRC(min)

52.5

50.625

49.5

ns

 

 

 

 

 

•JEDEC standard 1.5V ± 0.075V Power Supply

•VDDQ = 1.5V ± 0.075V

•400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin

•8 independent internal bank

•Programmable CAS Latency: 5,6,7,8,9

•Programmable Additive Latency(Posted CAS) : 0, CL - 2, or CL - 1 clock

•Programmable CAS Write Latency(CWL) = 5(DDR3-800), 6(DDR3-1066) and 7(DDR3-1333)

•Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]

•Bi-directional Differential Data Strobe

•On Die Termination using ODT pin

•Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE ≤ 95°C

•Asynchronous Reset

3. Address Configuration

Organization

Row Address

Column Address

Bank Address

Auto Precharge

512Mx8(4Gb) based Module

A0-A15

A0-A9

BA0-BA2

A10/AP

 

 

 

 

 

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Contents Datasheet History RevFirst Release Jul Kim Table Of Contents Address Configuration Key FeaturesDDR3 Unbuffered Sodimm Ordering Information X64 Dimm Pin Configurations Front side/Back Side Pin Front BackPin Description Pin Name Description NumberSymbol Type Function Input/Output Functional DescriptionFunction Block Diagram 8GB, 1Gx64 Module Populated as 2 ranks of x8 DDR3 SDRAMsDram Component Operating Temperature Range Absolute Maximum RatingsAC & DC Operating Conditions Absolute Maximum DC Ratings10.1 AC & DC Logic Input Levels for Single-ended Signals AC & DC Input Measurement LevelsVref Tolerances Illustration of Vrefdc tolerance and Vref ac-noise limitsAC and DC Logic Input Levels for Differential Signals Differential Signals DefinitionSymbol Parameter DDR3-800/1066/1333/1600 Unit +0.2Single-ended Requirements for Differential Signals TimeSlew Rate Definition for Single Ended Input Signals Slew rate definition for Differential Input SignalsDifferential Input Cross Point Voltage Parameter DDR3-800/1066/1333/1600 Unit Min MaxAC & DC Output Measurement Levels Single Ended AC and DC Output LevelsDifferential AC and DC Output Levels Single-ended Output Slew RateDifferential Output Slew Rate Differential output slew rate for rising edgeDelta TRdiff Differential output slew rate for falling edge Delta TFdiffDimm IDD specification definition Symbol DescriptionDatasheet IDD Spec Table M471B1G73AH0 8GB 1Gx64 ModuleInput/Output Capacitance 14.1 2Rx8 2GB SodimmM471B1G73AH0 Parameter DDR3-1066 DDR3-1333Electrical Characteristics and AC timing Refresh Parameters by Device DensityDDR3-1066 Speed Bins CL-nRCD-nRP DDR3-1333 Speed Bins DDR3-1333 CL-nRCD-nRPDDR3-1600 Speed Bins CL-nRCD-nRP Absolute Specification Toper Vddq = VDD = 1.5V +/- 0.075 Speed Bin Table NotesTiming Parameters by Speed Grade Timing Parameters by Speed BinReset Timing MIN MAX Jitter Notes ZQCorrection TSens x Tdriftrate + VSens x Vdriftrate Timing Parameter NotesX 1 + 0.15 x 15 = 0.133 ~~ 128ms Physical Dimensions 17.1 512Mx8 based 1Gx64 Module 2 Ranks M471B1G73AH0

M471B1G73AH0 specifications

The Samsung M471B1G73AH0 is a high-performance DDR4 SO-DIMM memory module designed for laptops and compact systems. This specific RAM chip showcases a balance of speed, efficiency, and reliability, making it an ideal choice for both everyday users and professionals seeking enhanced system performance.

One of the main features of the M471B1G73AH0 is its capacity. With 8GB of memory, it provides ample space for multitasking, allowing users to run multiple applications simultaneously without experiencing slowdowns. This is particularly beneficial for users who require a robust performance for tasks such as video editing, gaming, or running virtual machines.

The module operates at a frequency of 2400 MHz, tapping into the capabilities of DDR4 technology. This frequency ensures that data can be transferred quickly, enhancing overall system responsiveness. The DDR4 specification also brings improvements in power efficiency compared to its predecessor, DDR3, resulting in lower energy consumption and prolonged battery life in portable devices.

Another notable aspect of the M471B1G73AH0 is its latency. With a CAS latency of CL17, this module strikes a good balance between speed and response time, ensuring that data retrieval and execution are efficient, which is crucial for both applications and system processes.

Samsung’s advanced manufacturing technology is evident in this module, which employs 20nm process technology to produce high-density chips. This not only contributes to lower power consumption but also results in a smaller physical footprint, allowing for increased memory density in compact devices.

In terms of compatibility, the M471B1G73AH0 is designed to support a wide range of platforms. It adheres to the standard SO-DIMM form factor, making it compatible with most laptops and all-in-one systems. This versatility allows users to easily upgrade their existing systems for enhanced performance.

Additionally, the module includes features such as ECC (Error-Correcting Code) capabilities for certain variants, which helps in identifying and correcting memory errors, thereby increasing system reliability—an essential aspect for critical applications.

In conclusion, the Samsung M471B1G73AH0 is a robust DDR4 memory solution that delivers solid performance and reliability. With its 8GB capacity, 2400 MHz frequency, and energy-efficient design, it is suitable for a wide range of computing needs, making it a popular choice among users looking to upgrade their systems for improved efficiency and responsiveness.
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