Samsung M471B1G73AH0 X64 Dimm Pin Configurations Front side/Back Side, Pin Front Back

Page 5

Unbuffered SODIMM

datasheet

Rev. 1.0

DDR3 SDRAM

4. x64 DIMM Pin Configurations (Front side/Back Side)

Pin	Front			Pin		Back				Pin	Front													Pin	Back							Pin	Front			Pin	Back
1	VREFDQ			2			VSS			71				VSS										72			VSS					139		VSS		140		DQ38
3		VSS		4			DQ4																KEY									141		DQ34		142		DQ39
5		DQ0		6			DQ5			73		CKE0												74	CKE1							143		DQ35		144		VSS
7		DQ1		8			VSS			75				VDD										76			VDD					145		VSS		146		DQ44
9		VSS		10						77					NC									78	A153							147		DQ40		148		DQ45
							DQS0
11		DM0		12		DQS0				79				BA2										80	A143							149		DQ41		150		VSS
13		VSS		14			VSS			81				VDD										82			VDD					151		VSS		152
																																						DQS5
15		DQ2		16			DQ6			83														84			A11					153		DM5		154		DQS5
											A12/BC

17		DQ3		18			DQ7			85					A9									86				A7				155		VSS		156		VSS
19		VSS		20			VSS			87				VDD										88			VDD					157		DQ42		158		DQ46
21		DQ8		22			DQ12			89					A8									90			A6					159		DQ43		160		DQ47

23		DQ9		24			DQ13			91					A5									92			A4					161		VSS		162		VSS
25		VSS		26			VSS			93				VDD										94			VDD					163		DQ48		164		DQ52
27				28			DM1			95					A3									96			A2					165		DQ49		166		DQ53
		DQS1
29		DQS1		30						97					A1									98			A0					167		VSS		168		VSS
						RESET
31		VSS		32			VSS			99				VDD										100			VDD					169				170		DM6
																																		DQS6
33		DQ10		34			DQ14			101				CK0										102		CK1						171		DQS6		172		VSS
35		DQ11		36			DQ15			103														104								173		VSS		174		DQ54
														CK0													CK1
37		VSS		38			VSS			105				VDD										106			VDD					175		DQ50		176		DQ55
39		DQ16		40			DQ20			107	A10/AP													108			BA1					177		DQ51		178		VSS
41		DQ17		42			DQ21			109				BA0										110								179		VSS		180		DQ60
																										RAS
43		VSS		44			VSS			111				VDD										112			VDD					181		DQ56		182		DQ61
45				46			DM2			113														114								183		DQ57		184		VSS
		DQS2													WE													S0
47		DQS2		48			VSS			115														116	ODT0							185		VSS		186
													CAS																									DQS7
49		VSS		50			DQ22			117				VDD										118			VDD					187		DM7		188		DQS7
51		DQ18		52			DQ23			119		A133												120	ODT1							189		VSS		190		VSS
53		DQ19		54			VSS			121														122			NC					191		DQ58		192		DQ62
															S1
55		VSS		56			DQ28			123				VDD										124			VDD					193		DQ59		194		DQ63
57		DQ24		58			DQ29			125		TEST												126	VREFCA							195		VSS		196		VSS
59		DQ25		60			VSS			127				VSS										128			VSS					197		SA0		198		NC
61		VSS		62						129		DQ32												130	DQ36							199	VDDSPD			200		SDA
							DQS3
63		DM3		64			DQS3			131		DQ33												132	DQ37							201		SA1		202		SCL

65		VSS		66			VSS			133				VSS										134			VSS					203		VTT		204		VTT
67		DQ26		68			DQ30			135														136	DM4
												DQS4

69		DQ27		70			DQ31			137		DQS4												138			VSS

NOTE :

1.NC = No Connect, NU = Not Used, RFU = Reserved Future Use

2.TEST(pin 125) is reserved for bus analysis probes and is NC on normal memory modules.

3.This address might be connected to NC balls of the DRAMs (depending on density); either way they will be connected to the termination resistor.

SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.

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Contents Datasheet First Release Jul Kim RevHistory Table Of Contents DDR3 Unbuffered Sodimm Ordering Information Key FeaturesAddress Configuration Pin Front Back X64 Dimm Pin Configurations Front side/Back SidePin Name Description Number Pin DescriptionInput/Output Functional Description Symbol Type Function8GB, 1Gx64 Module Populated as 2 ranks of x8 DDR3 SDRAMs Function Block DiagramAbsolute Maximum Ratings Dram Component Operating Temperature RangeAC & DC Operating Conditions Absolute Maximum DC RatingsAC & DC Input Measurement Levels 10.1 AC & DC Logic Input Levels for Single-ended SignalsIllustration of Vrefdc tolerance and Vref ac-noise limits Vref TolerancesDifferential Signals Definition AC and DC Logic Input Levels for Differential SignalsSymbol Parameter DDR3-800/1066/1333/1600 Unit +0.2Time Single-ended Requirements for Differential SignalsSlew rate definition for Differential Input Signals Slew Rate Definition for Single Ended Input SignalsDifferential Input Cross Point Voltage Parameter DDR3-800/1066/1333/1600 Unit Min MaxSingle Ended AC and DC Output Levels AC & DC Output Measurement LevelsDifferential AC and DC Output Levels Single-ended Output Slew RateDifferential output slew rate for rising edge Differential Output Slew RateDelta TRdiff Differential output slew rate for falling edge Delta TFdiffSymbol Description Dimm IDD specification definitionDatasheet M471B1G73AH0 8GB 1Gx64 Module IDD Spec Table14.1 2Rx8 2GB Sodimm Input/Output CapacitanceM471B1G73AH0 Parameter DDR3-1066 DDR3-1333Refresh Parameters by Device Density Electrical Characteristics and AC timingDDR3-1066 Speed Bins CL-nRCD-nRP DDR3-1333 CL-nRCD-nRP DDR3-1333 Speed BinsDDR3-1600 Speed Bins CL-nRCD-nRP Speed Bin Table Notes Absolute Specification Toper Vddq = VDD = 1.5V +/- 0.075Timing Parameters by Speed Bin Timing Parameters by Speed GradeReset Timing MIN MAX Jitter Notes X 1 + 0.15 x 15 = 0.133 ~~ 128ms Timing Parameter NotesZQCorrection TSens x Tdriftrate + VSens x Vdriftrate 17.1 512Mx8 based 1Gx64 Module 2 Ranks M471B1G73AH0 Physical Dimensions

M471B1G73AH0 specifications

The Samsung M471B1G73AH0 is a high-performance DDR4 SO-DIMM memory module designed for laptops and compact systems. This specific RAM chip showcases a balance of speed, efficiency, and reliability, making it an ideal choice for both everyday users and professionals seeking enhanced system performance.

One of the main features of the M471B1G73AH0 is its capacity. With 8GB of memory, it provides ample space for multitasking, allowing users to run multiple applications simultaneously without experiencing slowdowns. This is particularly beneficial for users who require a robust performance for tasks such as video editing, gaming, or running virtual machines.

The module operates at a frequency of 2400 MHz, tapping into the capabilities of DDR4 technology. This frequency ensures that data can be transferred quickly, enhancing overall system responsiveness. The DDR4 specification also brings improvements in power efficiency compared to its predecessor, DDR3, resulting in lower energy consumption and prolonged battery life in portable devices.

Another notable aspect of the M471B1G73AH0 is its latency. With a CAS latency of CL17, this module strikes a good balance between speed and response time, ensuring that data retrieval and execution are efficient, which is crucial for both applications and system processes.

Samsung’s advanced manufacturing technology is evident in this module, which employs 20nm process technology to produce high-density chips. This not only contributes to lower power consumption but also results in a smaller physical footprint, allowing for increased memory density in compact devices.

In terms of compatibility, the M471B1G73AH0 is designed to support a wide range of platforms. It adheres to the standard SO-DIMM form factor, making it compatible with most laptops and all-in-one systems. This versatility allows users to easily upgrade their existing systems for enhanced performance.

Additionally, the module includes features such as ECC (Error-Correcting Code) capabilities for certain variants, which helps in identifying and correcting memory errors, thereby increasing system reliability—an essential aspect for critical applications.

In conclusion, the Samsung M471B1G73AH0 is a robust DDR4 memory solution that delivers solid performance and reliability. With its 8GB capacity, 2400 MHz frequency, and energy-efficient design, it is suitable for a wide range of computing needs, making it a popular choice among users looking to upgrade their systems for improved efficiency and responsiveness.