CY14B256K
Document Number: 001-06431 Rev. *H Page 6 of 28
Table 1. Mode Selection
CE WE OE A13–A0 Mode IO Power
H X X X Not Selected Output High Z Standby
L H L X Read SRAM Output Data Active
L L X X Write SRAM Input Data Active
L H L 0x0E38
0x31C7
0x03E0
0x3C1F
0x303F
0x0FC0
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile STORE
Output Data
Output Data
Output Data
Output Data
Output Data
Output High Z
Active ICC2[1, 2, 3]
L H L 0x0E38
0x31C7
0x03E0
0x3C1F
0x303F
0x0C63
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile RECALL
Output Data
Output Data
Output Data
Output Data
Output Data
Output High Z
Active[1, 2, 3]
Notes
1. The six consecutive address locations are in the order listed. WE is HIGH during all six cycles to enable a nonvolatile cycle.
2. While there are 15 address lines on the CY14B256K, only the lower 14 lines are used to control software modes.
3. IO state depends on the state of OE. The IO table shown is based on OE Low.
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