CY7C1141V18, CY7C1156V18

CY7C1143V18, CY7C1145V18

Application Example

Figure 1 shows the four QDR-II+ used in an application.

Figure 1. Appliation Example

 

 

 

SRAM #1

 

ZQ

RQ = 250ohms

 

 

ZQ

RQ = 250ohms

 

Vt

 

CQ/CQ

 

 

SRAM #4

CQ/CQ

 

 

 

D

 

 

Q

 

D

 

Q

 

 

R

A

RPS WPS BWS

K

K

 

A

RPS WPS BWS

K K

 

DATA IN

 

 

 

 

 

 

R

 

 

DATA OUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Vt

 

 

Address

 

 

 

 

 

 

Vt

 

 

BUS MASTER

RPS

 

 

 

 

 

 

R

 

 

 

 

 

 

 

 

 

 

 

(CPU or ASIC)

WPS

 

 

 

 

 

 

 

 

 

 

BWS

 

 

 

 

 

 

 

 

 

CLKIN/CLKIN

 

 

 

 

 

 

 

 

 

Source K

 

 

 

 

 

 

 

 

 

Source K

 

 

 

 

 

 

R = 50ohms, Vt = VDDQ/2

 

 

 

 

 

 

 

 

Truth Table

The truth table for the CY7C1141V18, CY7C1156V18, CY7C1143V18, and CY7C1145V18 follows.[2, 3, 4, 5, 6, 7]

Operation

K

 

RPS

 

WPS

DQ

DQ

DQ

DQ

Write Cycle:

L-H

 

H[8]

 

L[9]

D(A) at K(t + 1)

D(A + 1) at

 

 

 

D(A + 2) at K(t + 2)

 

 

 

 

K(t + 1)

D(A + 3) at K(t + 2)

Load address on the rising

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

edge of K; input write data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

on two consecutive K and

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

K rising edges

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle:

L-H

 

L[9]

 

X

Q(A) at K(t + 2)

Q(A + 1) at

 

 

Q(A + 2) at K(t + 3)

 

 

 

 

K(t + 2)

Q(A + 3) at K(t + 3)

(2.0 cycle Latency)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Load address on the rising

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

edge of K; wait one and a

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

half cycle; read data on

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

two consecutive K and

K

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

rising edges

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOP: No Operation

L-H

 

H

 

H

D = X

D = X

D = X

D = X

 

 

 

 

 

 

 

 

 

Q = High-Z

Q = High-Z

Q = High-Z

Q = High-Z

 

 

 

 

 

 

 

 

 

 

Standby: Clock Stopped

Stopped

 

X

 

X

Previous State

Previous State

Previous State

Previous State

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

2.X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.

3.Device powers up deselected and the outputs in a tri-state condition.

4.“A” represents address location latched by the devices when transaction was initiated. A + 1, A + 2, and A + 3 represents the address sequence in the burst.

5.“t” represents the cycle at which a Read/Write operation is started. t + 1, t + 2, and t + 3 are the first, second, and third clock cycles respectively succeeding the “t” clock cycle.

6.Data inputs are registered at K and K rising edges. Data outputs are delivered on K and K rising edges.

7.IDo K = K = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.

8.If this signal was LOW to initiate the previous cycle, this signal becomes a “Don’t Care” for this operation.

9.This signal was HIGH on previous K clock rise. Initiating consecutive read or write operations on consecutive K clock rises is not permitted. The device ignores the second read orwrite request.

Document Number: 001-06583 Rev. *D

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Cypress CY7C1143V18, CY7C1145V18, CY7C1141V18, CY7C1156V18 manual Application Example, Sram #4, BUS Master, Operation