Cypress CY7C1310BV18 manual Features, Functional Description, Configurations, Selection Guide

CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18

18-Mbit QDR™-II SRAM 2-Word Burst Architecture

Features

■Separate independent read and write data ports

❐Supports concurrent transactions

■250 MHz clock for high bandwidth

■2-word burst on all accesses

■Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 500 MHz) at 250 MHz

■Two input clocks (K and K) for precise DDR timing

❐SRAM uses rising edges only

■Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches

■Echo clocks (CQ and CQ) simplify data capture in high-speed systems

■Single multiplexed address input bus latches address inputs for both read and write ports

■Separate port selects for depth expansion

■Synchronous internally self-timed writes

■Available in x8, x9, x18, and x36 configurations

■Full data coherency, providing most current data

■Core VDD = 1.8V (±0.1V); IO VDDQ = 1.4V to VDD

■Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)

■Offered in both Pb-free and non Pb-free packages

■Variable drive HSTL output buffers

■JTAG 1149.1 compatible test access port

■Delay Lock Loop (DLL) for accurate data placement

Functional Description

The CY7C1310BV18, CY7C1910BV18, CY7C1312BV18, and CY7C1314BV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has data outputs to support read operations and the write port has data inputs to support write operations. QDR-II architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus required with common IO devices. Access to each port is accomplished through a common address bus. The read address is latched on the rising edge of the K clock and the write address is latched on the rising edge of the K clock. Accesses to the QDR-II read and write ports are completely independent of one another. To maximize data throughput, both read and write ports are provided with DDR interfaces. Each address location is associated with two 8-bit words (CY7C1310BV18), 9-bit words (CY7C1910BV18), 18-bit words (CY7C1312BV18), or 36-bit words (CY7C1314BV18) that burst sequentially into or out of the device. Because data can be trans- ferred into and out of the device on every rising edge of both input clocks (K and K and C and C), memory bandwidth is maximized while simplifying system design by eliminating bus “turn-arounds”.

Depth expansion is accomplished with port selects, which enables each port to operate independently.

All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C (or K or K in a single clock domain) input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.

Configurations

CY7C1310BV18 – 2M x 8

CY7C1910BV18 – 2M x 9

CY7C1312BV18 – 1M x 18

CY7C1314BV18 – 512K x 36

Selection Guide

Description		250 MHz	200 MHz	167 MHz	Unit
Maximum Operating Frequency		250	200	167	MHz
Maximum Operating Current	x8	735	630	550	mA
	x9	735	630	550
	x18	800	675	600
	x36	900	750	650

Cypress Semiconductor Corporation • 198 Champion Court	•	San Jose, CA 95134-1709	•	408-943-2600
Document #: 38-05619 Rev. *F			Revised June 2, 2008

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