CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
Document History Page
Document Title: CY7C1310BV18/CY7C1910BV18/CY7C1312BV18/CY7C1314BV18,
Architecture
Document Number:
Rev. | ECN No. | Submission | Orig, of | Description of Change | ||
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| Date | Change |
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** | 252474 | See ECN | SYT | New datasheet | ||
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*A | 325581 | See ECN | SYT | Removed CY7C1910BV18 from the title | ||
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| Included 300 MHz Speed Bin | ||
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| Added Industrial Temperature Grade | ||
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| Replaced TBDs for IDD and ISB1 specifications | ||
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| Replaced the TBDs on the Thermal Characteristics Table to ΘJA = 28.51°C/W and ΘJC | ||
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| = 5.91°C/W | ||
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| Replaced TBDs in the Capacitance Table for the 165 FBGA Package | ||
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| Changed the package diagram from BB165E (15 x 17 x 1.4 mm) to BB165D | ||
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| (13 x 15 x 1.4 mm) | ||
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| Added | ||
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| Updated the Ordering Information by Shading and Unshading MPNs as per availability | ||
*B | 413997 | See ECN | NXR | Converted from Preliminary to Final | ||
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| Added CY7C1910BV18 part number to the title | ||
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| Removed 300MHz Speed Bin | ||
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| Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North | ||
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| First Street” to “198 Champion Court” | ||
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| Changed C/C Pin Description in the features section and Pin Description | ||
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| Corrected Typo in Identification Register Definitions for CY7C1910BV18 on page# 16 | ||
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| Added power up sequence details and waveforms | ||
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| Added foot notes #15, 16, and 17 on page# 18 | ||
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| Replaced Three state with | ||
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| Changed the description of IX from Input Load Current to Input Leakage Current on | ||
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| page# 13 | ||
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| Modified the IDD and ISB values | ||
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| Modified test condition in Footnote #20 on page# 19 from VDDQ < VDD to | ||
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| VDDQ < VDD | ||
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| Replaced Package Name column with Package Diagram in the Ordering | ||
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| Information table | ||
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| Updated Ordering Information Table | ||
*C | 423334 | See ECN | NXR | Changed the IEEE Standard # | ||
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| Changed the Minimum Value of tSC and tHC from 0.5ns to 0.35ns for 250 MHz and 0.6 | ||
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| ns to 0.4 ns for 200 MHz speed bins |
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| Changed the description of tSA from K Clock Rise to Clock (K/K) | Rise | |
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| Changed the description of tSC and tHC from Clock (K and K) Rise to K Clock Rise | ||
*D | 472384 | See ECN | NXR | Modified the ZQ Definition from Alternately, this pin is connected directly to VDD to | ||
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| Alternately, this pin is connected directly to VDDQ | ||
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| Changed the IEEE Standard # from | ||
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| Included Maximum Ratings for Supply Voltage on VDDQ Relative to GND | ||
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| Changed the Maximum Ratings for DC Input Voltage from VDDQ to VDD | ||
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| Changed tTH and tTL from 40 ns to 20 ns, changed tTMSS, tTDIS, tCS, tTMSH, tTDIH, tCH | ||
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| from 10 ns to 5 ns and changed tTDOV from 20 ns to 10 ns in Tap Switching Character- | ||
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| istics. | ||
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| Modified Power Up waveform | ||
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| Changed the Maximum rating of Ambient Temperature with Power Applied from | ||
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| to +85°C to | ||
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| Added additional notes in the AC parameter section | ||
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| Modified AC Switching Waveform | ||
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| Corrected the typo In the Tap Switching Characteristics. | ||
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| Updated the Ordering Information Table | ||
Document #: | Page 28 of 29 |
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