Cypress CY7C1356C, CY7C1354C manual Maximum Ratings, Operating Range, Ambient Range

CY7C1354C

CY7C1356C

Maximum Ratings

(Above which the useful life may be impaired. For user guide- lines, not tested.)

Storage Temperature		–65°C to +150°C
Ambient Temperature with
Power Applied		–55°C to +125°C
Supply Voltage on VDD Relative to GND		–0.5V to +4.6V
Supply Voltage on VDDQ Relative to GND		–0.5V to +VDD
DC to Outputs in Tri-State	–0.5V to VDDQ + 0.5V

DC Input Voltage		–0.5V to VDD + 0.5V
Current into Outputs (LOW)			20 mA
Static Discharge Voltage			> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current			> 200 mA
Operating Range
	Ambient
Range	Temperature	VDD	VDDQ
Commercial	0°C to +70°C	3.3V –5%/+10%	2.5V – 5%
			to VDD
Industrial	–40°C to +85°C

Electrical Characteristics Over the Operating Range[14, 15]

Parameter	Description	Test Conditions		Min.	Max.	Unit
VDD	Power Supply Voltage			3.135	3.6	V
VDDQ	I/O Supply Voltage	for 3.3V I/O		3.135	VDD	V
		for 2.5V I/O		2.375	2.625	V
VOH	Output HIGH Voltage	for 3.3V I/O, IOH = −4.0 mA		2.4		V
		for 2.5V I/O, IOH = −1.0 mA		2.0		V
VOL	Output LOW Voltage	for 3.3V I/O, IOL= 8.0 mA			0.4	V
		for 2.5V I/O, IOL= 1.0 mA			0.4	V
VIH	Input HIGH Voltage	for 3.3V I/O		2.0	VDD + 0.3V	V
		for 2.5V I/O		1.7	VDD + 0.3V	V
VIL	Input LOW Voltage[16]	for 3.3V I/O		–0.3	0.8	V
		for 2.5V I/O		–0.3	0.7	V
IX	Input Leakage Current	GND ≤ VI ≤ VDDQ		–5	5	∝A
	except ZZ and MODE
	Input Current of MODE	Input = VSS		–30		∝A
		Input = VDD			5	∝A
	Input Current of ZZ	Input = VSS		–5		∝A
		Input = VDD			30	∝A
IOZ	Output Leakage Current	GND ≤ VI ≤ VDDQ, Output Disabled		–5	5	∝A
IDD	VDD Operating Supply	VDD = Max., IOUT = 0 mA,	4-ns cycle, 250 MHz		250	mA
		f = fMAX = 1/tCYC
			5-ns cycle, 200 MHz		220	mA
			6-ns cycle, 166 MHz		180	mA
ISB1	Automatic CE	Max. VDD, Device Deselected,	4-ns cycle, 250 MHz		130	mA
	Power-down	VIN ≥ VIH or VIN ≤ VIL, f = fMAX
			5-ns cycle, 200 MHz		120	mA
	Current—TTL Inputs	= 1/tCYC
			6-ns cycle, 166 MHz		110	mA
ISB2	Automatic CE	Max. VDD, Device Deselected,	All speed grades		40	mA
	Power-down	VIN ≤ 0.3V or VIN > VDDQ − 0.3V,
	Current—CMOS Inputs	f = 0
ISB3	Automatic CE	Max. VDD, Device Deselected,	4-ns cycle, 250 MHz		120	mA
	Power-down	VIN ≤ 0.3V or VIN > VDDQ − 0.3V,
			5-ns cycle, 200 MHz		110	mA
	Current—CMOS Inputs	f = fMAX = 1/tCYC
			6-ns cycle, 166 MHz		100	mA
ISB4	Automatic CE	Max. VDD, Device Deselected,	All speed grades		40	mA
	Power-down	VIN ≥ VIH or VIN ≤ VIL, f = 0
	Current—TTL Inputs

Notes:

14.Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC)> –2V (Pulse width less than tCYC/2).

15.TPower-up: Assumes a linear ramp from 0V to VDD (min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

16.Tested initially and after any design or process changes that may affect these parameters.

Document #: 38-05538 Rev. *G Page 17 of 28

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