Cypress CY7C1354C, CY7C1356C Maximum Ratings , Operating Range , Electrical Characteristics

CY7C1354C
CY7C1356C
Document #: 38-05538 Rev. *G Page 17 of 28
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on VDD Relative to GND........–0.5V to +4.6V
Supply Voltage on VDDQ Relative to GND......–0.5V to +VDD
DC to Outputs in Tri-State...................–0.5V to VDDQ + 0.5V
DC Input Voltage...................................–0.5V to VDD + 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage...........................................> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.....................................................> 200 mA
Operating Range
Range Ambient Temper atur e VDD VDDQ
Commercial 0°C to +70°C 3.3V –5%/+10% 2.5V – 5%
to VDD
Industrial –40°C to +85°C
Electrical Characteristics Over the Operating Range[14, 15]
Parameter Description Test Conditions Min. Max. Unit
VDD Power Supply Voltage 3.135 3.6 V
VDDQ I/O Supply Voltage for 3.3V I/O 3.135 VDD V
for 2.5V I/O 2.375 2.625 V
VOH Output HIGH Voltage for 3.3V I/O, IOH = −4.0 mA 2.4 V
for 2.5V I/O, IOH = −1.0 mA 2.0 V
VOL Output LOW Voltage for 3.3V I/O, IOL= 8.0 mA 0.4 V
for 2.5V I/O, IOL= 1.0 mA 0.4 V
VIH Input HIGH Voltage for 3.3V I/O 2.0 VDD + 0.3V V
for 2.5V I/O 1.7 VDD + 0.3V V
VIL Input LOW Voltage[16] for 3.3V I/O –0.3 0.8 V
for 2.5V I/O –0.3 0.7 V
IXInput Leakage Current
except ZZ and MODE GND ≤ VI ≤ VDDQ –5 5 µA
Input Current of MODE Input = VSS –30 µA
Input = VDD 5µA
Input Current of ZZ Input = VSS –5 µA
Input = VDD 30 µA
IOZ Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled –5 5 µA
IDD VDD Operating Supply VDD = Max., IOUT = 0 mA,
f = fMAX = 1/tCYC
4-ns cycle, 250 MHz 250 mA
5-ns cycle, 200 MHz 220 mA
6-ns cycle, 166 MHz 180 mA
ISB1 Automatic CE
Power-down
Current—TTL Inputs
Max. VDD, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL, f = fMAX
= 1/tCYC
4-ns cycle, 250 MHz 130 mA
5-ns cycle, 200 MHz 120 mA
6-ns cycle, 166 MHz 110 mA
ISB2 Automatic CE
Power-down
Current—CMOS Inputs
Max. VDD, Device Deselected,
VIN ≤ 0.3V or VIN > VDDQ − 0.3V,
f = 0
All speed grades 40 mA
ISB3 Automatic CE
Power-down
Current—CMOS Inputs
Max. VDD, Device Deselected,
VIN ≤ 0.3V or VIN > VDDQ − 0.3V,
f = fMAX = 1/tCYC
4-ns cycle, 250 MHz 120 mA
5-ns cycle, 200 MHz 110 mA
6-ns cycle, 166 MHz 100 mA
ISB4 Automatic CE
Power-down
Current—TTL Inputs
Max. VDD, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL, f = 0 All speed grades 40 mA
Notes:
14.Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC)> –2V (Pulse width less than tCYC/2).
15.TPower-up: Assumes a linear ramp from 0V to VDD (min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
16.Tested initially and after any design or process changes that may affect these parameters.
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