CY7C1364C
Document #: 38-05689 Rev. *E Page 9 of 18
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied............................................ –55°C to +125°C
Supply Voltage on VDD Relative to GND........–0.5V to +4.6V
Supply Voltage on VDDQ Relative to GND......–0.5V to +VDD
DC Voltage Applied to Outputs
in tri-state.............................................–0.5V to VDDQ + 0.5V
DC Input Voltage...................................–0.5V to VDD + 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage.......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
Range Ambient
Temper ature VDD VDDQ
Commercial 0°C to +70°C 3.3V –
5%/+10% 2.5V – 5% to
VDD
Industrial –40°C to +85°C
Electrical Characteristics Over the Operating Range [9, 10]
Parameter Description Test Conditions Min. Max. Unit
VDD Power Supply Voltage 3.135 3.6 V
VDDQ I/O Supply Voltage for 3.3 V I/O 3.135 VDD V
for 2.5V I/O 2.375 2.625 V
VOH Output HIGH Voltage for 3.3 V I/O, IOH = –4.0 mA 2.4 V
for 2.5V I/O, IOH = –1.0 mA 2.0 V
VOL Output LOW Voltage for 3.3 V I/O, IOL = 8.0 mA 0.4 V
for 2.5V I/O, IOL = 1.0 mA 0.4 V
VIH Input HIGH Voltage[9] for 3.3 V I/O 2.0 VDD + 0.3V V
for 2.5V I/O 1.7 VDD + 0.3V V
VIL Input LOW Voltage[9] for 3.3 V I/O –0.3 0.8 V
for 2.5V I/O –0.3 0.7 V
IXInput Leakage Current
except ZZ and MODE GND ≤ VI ≤ VDDQ –5 5µA
Input Current of MODE Input = VSS –30 µA
Input = VDD 5µA
Input Current of ZZ Input = VSS –5 µA
Input = VDD 30 µA
IOZ Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled –5 5µA
IDD VDD Operating Supply
Current VDD = Max., IOUT = 0 mA,
f = fMAX = 1/tCYC
4-ns cycle, 250 MHz 250 mA
5-ns cycle, 200 MHz 220 mA
6-ns cycle, 166 MHz 180 mA
ISB1 Automatic CE
Power-down
Current—TTL Inputs
VDD = Max., Device Deselected,
VIN ≥ VIH or VIN ≤ VIL,
f = fMAX = 1/tCYC
4-ns cycle, 250 MHz 130 mA
5-ns cycle, 200 MHz 120
6-ns cycle, 166 MHz 110
ISB2 Automatic CE
Power-down
Current—CMOS Inputs
VDD = Max., Device Deselected,
VIN≤ 0.3V or VIN > VDDQ – 0.3V,
f = 0
All speeds 40 mA
ISB3 Automatic CE
Power-down
Current—CMOS Inputs
VDD = Max., Device Deselected,
or VIN ≤ 0.3V or VIN > VDDQ – 0.3V,
f = fMAX = 1/tCYC
4-ns cycle, 250 MHz 120 mA
5-ns cycle, 200 MHz 110
6-ns cycle, 166 MHz 100
ISB4 Automatic CE
Power-down
Current—TTL Inputs
VDD = Max., Device Deselected,
VIN ≥ VIH or VIN ≤ VIL,
f = 0
All speeds 40 mA
Notes:
9. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (Pulse width less than tCYC/2).
10.TPower-up: Assumes a linear ramp from 0Vv to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
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