CY7C1471BV25

CY7C1473BV25, CY7C1475BV25

TAP AC Switching Characteristics

Over the Operating Range[9, 10]

Parameter

Description

Min

Max

Unit

Clock

 

 

 

 

 

 

 

 

 

tTCYC

TCK Clock Cycle Time

50

 

ns

tTF

TCK Clock Frequency

 

20

MHz

tTH

TCK Clock HIGH Time

20

 

ns

tTL

TCK Clock LOW Time

20

 

ns

Output Times

 

 

 

 

tTDOV

TCK Clock LOW to TDO Valid

 

10

ns

tTDOX

TCK Clock LOW to TDO Invalid

0

 

ns

Setup Times

 

 

 

 

tTMSS

TMS Setup to TCK Clock Rise

5

 

ns

tTDIS

TDI Setup to TCK Clock Rise

5

 

ns

tCS

Capture Setup to TCK Rise

5

 

ns

Hold Times

 

 

 

 

 

 

 

 

 

tTMSH

TMS Hold after TCK Clock Rise

5

 

ns

tTDIH

TDI Hold after Clock Rise

5

 

ns

tCH

Capture Hold after Clock Rise

5

 

ns

2.5V TAP AC Test Conditions

Figure 6. 2.5V TAP AC Output Load Equivalent

 

Input pulse levels

 

VSS to 2.5V

 

 

 

 

 

 

 

1.25V

 

Input rise and fall time

1 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input timing reference levels

1.25V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

50Ω

 

Output reference levels

1.25V

TDO

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Test load termination supply voltage

1.25V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ZO= 50Ω

 

 

 

 

 

 

 

 

 

20pF

 

TAP DC Electrical Characteristics And Operating Conditions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(0°C < T < +70°C; V

DD

= 2.375 to 2.625 unless otherwise noted) [11]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

 

 

Description

Test Conditions

 

 

 

 

Min

 

 

 

Max

 

Unit

VOH1

 

Output HIGH Voltage

IOH = –1.0 mA, VDDQ = 2.5V

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

 

 

V

VOH2

 

Output HIGH Voltage

IOH = –100 µA, VDDQ = 2.5V

 

 

 

 

2.1

 

 

 

 

 

 

 

 

 

 

 

V

VOL1

 

Output LOW Voltage

IOL = 1.0 mA, VDDQ = 2.5V

 

 

 

 

 

 

 

0.4

 

V

VOL2

 

Output LOW Voltage

IOL = 100 µA, VDDQ = 2.5V

 

 

 

 

 

 

 

0.2

 

V

VIH

 

Input HIGH Voltage

VDDQ = 2.5V

 

 

 

 

1.7

 

 

VDD + 0.3

 

V

VIL

 

Input LOW Voltage

VDDQ = 2.5V

 

 

 

 

–0.3

 

 

0.7

 

V

IX

 

Input Load Current

GND < VIN < VDDQ

 

 

 

 

–5

 

 

5

 

µA

Notes

9.tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register. 10.Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns.

11.All voltages refer to VSS (GND).

Document #: 001-15013 Rev. *E

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Cypress CY7C1473BV25, CY7C1471BV25, CY7C1475BV25 manual TAP AC Switching Characteristics, 5V TAP AC Test Conditions

CY7C1475BV25, CY7C1473BV25, CY7C1471BV25 specifications

Cypress Semiconductor, a leader in specialized memory solutions, offers a range of high-performance SRAM products, including the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25. These devices are designed to provide high-speed data processing capabilities along with impressive power efficiency, making them ideal choices for a variety of applications in telecommunications, networking, automotive, and consumer electronics.

The CY7C1471BV25 features a 1-Mbit density, while the CY7C1473BV25 and CY7C1475BV25 support densities of 3-Mbits and 5-Mbits respectively. All three models utilize a 3.3V power supply, and deliver fast access times of 5 ns (for CY7C1471BV25) and 6 ns (for CY7C1473BV25 and CY7C1475BV25). This rapid access enables quicker data retrieval and overall enhanced system performance.

One of the standout features of these SRAM devices is their asynchronous operation, which allows for straightforward integration into existing systems without the need for complex timing protocols. They can be easily interfaced with various microcontrollers and digital signal processors, providing flexibility and ease of use. Additionally, the devices are available in multiple package options, including the widely used TSOP and BGA formats, enabling designers to choose the best fit for their specific layouts.

In terms of technology, these SRAMs leverage advanced CMOS manufacturing processes, which contribute to their low power consumption and high reliability. With sleep modes and low standby current, they are particularly suited for battery-operated devices that demand energy efficiency.

Cypress products are renowned for their reliability and robustness, ensuring that the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25 can withstand the demands of harsh environments and extended usage. The devices also incorporate features such as high-speed data ports, which facilitate bidirectional data flow, making them optimal for both read and write operations.

In summary, the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25 SRAMs by Cypress are excellent choices for those seeking high-performance, low-power memory solutions. Their advanced technology, combined with a variety of features and options, caters to the needs of many industries, paving the way for innovative designs in modern electronics.