CY7C1471BV25
CY7C1473BV25, CY7C1475BV25
Document #: 001-15013 Rev. *E Page 20 of 30
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied............................................ –55°C to +125°C
Supply Voltage on VDD Relative to GND........–0.5V to +3.6V
Supply Voltage on VDDQ Relative to GND.......–0.5V to +VDD
DC Voltage Applied to Outputs
in Tri-State...........................................–0.5V to VDDQ + 0.5V
DC Input Voltage................................... –0.5V to VDD + 0.5V
Current into Outputs (LOW)........................................ 20 mA
Static Discharge Voltage........................................... >2001V
(MIL-STD-883, Method 3015)
Latch Up Current.................................................... >200 mA
Operating Range
Range Ambient
Temper ature VDD VDDQ
Commercial 0°C to +70°C 2.5V –5%/+5% 2.5V–5% to
VDD
Industrial –40°C to +85°C
Electrical Characteristics
Over the Operating Range [12, 13]
Parameter Description Test Conditions Min Max Unit
VDD Power Supply Voltage 2.375 2.625 V
VDDQ IO Supply Voltage For 2.5V IO 2.375 VDD V
VOH Output HIGH Voltage For 2.5V IO, IOH = –1.0 mA 2.0 V
VOL Output LOW Voltage For 2.5V IO, IOL= 1.0 mA 0.4 V
VIH Input HIGH Voltage[12] For 2.5V IO 1.7 VDD + 0.3V V
VIL Input LOW Voltage[12] For 2.5V IO –0.3 0.7 V
IXInput Leakage Current
except ZZ and MODE GND ≤ VI ≤ VDDQ –5 5 μA
Input Current of MODE Input = VSS –30 μA
Input = VDD 5μA
Input Current of ZZ Input = VSS –5 μA
Input = VDD 30 μA
IOZ Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled –5 5 μA
IDD [14] VDD Operating Supply
Current VDD = Max, IOUT = 0 mA,
f = fMAX = 1/tCYC
6.5 ns cycle, 133 MHz 305 mA
8.5 ns cycle, 100 MHz 275 mA
ISB1 Automatic CE
Power Down
Current—TTL Inputs
VDD = Max, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL
f = fMAX, inputs switching
6.5 ns cycle, 133 MHz 170 mA
8.5 ns cycle, 100 MHz 170 mA
ISB2 Automatic CE
Power Down
Current—CMOS Inputs
VDD = Max, Device Deselected,
VIN ≤ 0.3V or VIN > VDD – 0.3V,
f = 0, inputs static
All speeds 120 mA
ISB3 Automatic CE
Power Down
Current—CMOS Inputs
VDD = Max, Device Deselected, or
VIN ≤ 0.3V or VIN > VDDQ – 0.3V
f = fMAX, inputs switching
6.5 ns cycle, 133 MHz 170 mA
8.5 ns cycle, 100 MHz 170 mA
ISB4 Automatic CE
Power Down
Current—TTL Inputs
VDD = Max, Device Deselected,
VIN ≥ VDD – 0.3V or VIN ≤ 0.3V,
f = 0, inputs static
All Speeds 135 mA
Notes
12.Overshoot: VIH(AC) < VDD +1.5V (pulse width less than tCYC/2). Undershoot: VIL(AC) > –2V (pulse width less than tCYC/2).
13.TPower-up: assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
14.The operation current is calculated with 50% read cycle and 50% write cycle.
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