Rite, Read | Cypress CY7C1475BV25, CY7C1471BV25, CY7C1473BV25

CY7C1471BV25

CY7C1473BV25, CY7C1475BV25

Switching Waveforms

Figure 8 shows read-write timing waveform.[19, 20, 21]

				Figure 8. Read/Write Timing
1		2	tCYC 3	4	5	6	7	8	9	10
CLK
tCENS	tCENH	tCH	tCL
CEN
tCES	tCEH

ADV/LD

W E

BW X

ADDRESS A1 A2

	tAS tAH
DQ		D(A1)
	tDS	tDH
OE
COM M AND	W RITE	W RITE
	W RITE	W RITE
	D(A1)	D(A2)

	A3	A4			A5	A6	A7
	tCDV
	tCLZ	tDOH		tOEV	tCHZ
D(A2)	D(A2+1)	Q(A3)	Q(A4)		Q(A4+1)	D(A5)	Q(A6)	D(A7)
			tOEHZ		tDOH
					tDOH
				tOELZ
BURST	READ	READ	BURST		W RITE	READ	W RITE	DESELECT
W RITE	Q(A3)	Q(A4)	READ		D(A5)	Q(A6)	D(A7)
D(A2+1)			Q(A4+1)

DON’T CARE

UNDEFINED

Notes

19.For this waveform ZZ is tied LOW.

20.When CE is LOW, CE1 is LOW, CE2 is HIGH, and CE3 is LOW. When CE is HIGH, CE1 is HIGH, CE2 is LOW or CE3 is HIGH.

21.Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved). Burst operations are optional.

Document #: 001-15013 Rev. *E

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Cypress CY7C1475BV25, CY7C1471BV25, CY7C1473BV25 manual Rite, Read

CY7C1475BV25, CY7C1473BV25, CY7C1471BV25 specifications

Cypress Semiconductor, a leader in specialized memory solutions, offers a range of high-performance SRAM products, including the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25. These devices are designed to provide high-speed data processing capabilities along with impressive power efficiency, making them ideal choices for a variety of applications in telecommunications, networking, automotive, and consumer electronics.

The CY7C1471BV25 features a 1-Mbit density, while the CY7C1473BV25 and CY7C1475BV25 support densities of 3-Mbits and 5-Mbits respectively. All three models utilize a 3.3V power supply, and deliver fast access times of 5 ns (for CY7C1471BV25) and 6 ns (for CY7C1473BV25 and CY7C1475BV25). This rapid access enables quicker data retrieval and overall enhanced system performance.

One of the standout features of these SRAM devices is their asynchronous operation, which allows for straightforward integration into existing systems without the need for complex timing protocols. They can be easily interfaced with various microcontrollers and digital signal processors, providing flexibility and ease of use. Additionally, the devices are available in multiple package options, including the widely used TSOP and BGA formats, enabling designers to choose the best fit for their specific layouts.

In terms of technology, these SRAMs leverage advanced CMOS manufacturing processes, which contribute to their low power consumption and high reliability. With sleep modes and low standby current, they are particularly suited for battery-operated devices that demand energy efficiency.

Cypress products are renowned for their reliability and robustness, ensuring that the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25 can withstand the demands of harsh environments and extended usage. The devices also incorporate features such as high-speed data ports, which facilitate bidirectional data flow, making them optimal for both read and write operations.

In summary, the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25 SRAMs by Cypress are excellent choices for those seeking high-performance, low-power memory solutions. Their advanced technology, combined with a variety of features and options, caters to the needs of many industries, paving the way for innovative designs in modern electronics.

Contents

Cypress Semiconductor Corporation 198 Champion Court FeaturesSelection Guide Functional Description Description 133 MHz 100 MHz Unit Logic Block Diagram CY7C1473BV25 4M x Logic Block Diagram CY7C1471BV25 2M x Logic Block Diagram CY7C1475BV25 1M x CY7C1471BV25 Pin Configurations CY7C1473BV25 CY7C1473BV25 4M x Ball Fbga 15 x 17 x 1.4 mm Pinout CY7C1471BV25 2M x NC/1G Ball Fbga 14 x 22 x 1.76 mm Pinout CY7C1475BV25 1M × Pin Definitions Name Description Mode Input. Selects the Burst Order of the DevicePower Supply Inputs to the Core of the Device Power Supply for the IO Circuitry TDI Functional OverviewPin Definitions Name Description Parameter Description Test Conditions Min Max Unit ZZ Mode Electrical CharacteristicsFirst Second Third Fourth Address A1 A0 Used Truth TableOperation Address Function Truth Table for Read/Write Ieee 1149.1 Serial Boundary Scan Jtag TAP Controller State Diagram TAP Registers TAP Timing 5V TAP AC Test Conditions TAP AC Switching CharacteristicsTAP DC Electrical Characteristics And Operating Conditions Identification Codes Instruction Description Scan Register Sizes Register Name Bit Size Bit # Ball ID Boundary Scan Exit Order 2M x Bit # Ball IDBoundary Scan Exit Order 4M x Bit # Ball ID Boundary Scan Exit Order 1M x Bit # Ball ID Range Ambient Electrical CharacteristicsMaximum Ratings Operating Range Parameter Description Test Conditions Tqfp Fbga Unit CapacitanceThermal Resistance Output Times Switching CharacteristicsSetup Times Parameter Description 133 MHz 100 MHz Unit Min Max Read Rite Stall Switching WaveformsAddress ZZ Mode Timing Ordering Information Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mm Package Diagrams Ball Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm Document History Issue Orig. Description of Change Date

Figure 8 shows read-write timing waveform.[19, 20, 21]

Figure 8. Read/Write Timing

ADV/LD

ADDRESS A1 A2

W RITE

READ

DON’T CARE

CY7C1475BV25, CY7C1473BV25, CY7C1471BV25 specifications