ZZ Mode Timing | Cypress CY7C1473BV25, CY7C1471BV25, CY7C1475BV25

CY7C1471BV25 CY7C1473BV25, CY7C1475BV25

Switching Waveforms (continued)

Figure 10 shows ZZ Mode timing waveform.[23, 24]

Figure 10. ZZ Mode Timing

CLK

t ZZ

t ZZI

ISUPPLY

I DDZZ

ALL INPUTS (except ZZ)

t ZZREC

t RZZI

DESELECT or READ Only

Outputs (Q)

High-Z

DON’T CARE

Notes

23.Device must be deselected when entering ZZ mode. See “Truth Table” on page 11 for all possible signal conditions to deselect the device.

24.DQs are in high-Z when exiting ZZ sleep mode.

Document #: 001-15013 Rev. *E

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Cypress CY7C1473BV25, CY7C1471BV25, CY7C1475BV25 manual ZZ Mode Timing

CY7C1475BV25, CY7C1473BV25, CY7C1471BV25 specifications

Cypress Semiconductor, a leader in specialized memory solutions, offers a range of high-performance SRAM products, including the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25. These devices are designed to provide high-speed data processing capabilities along with impressive power efficiency, making them ideal choices for a variety of applications in telecommunications, networking, automotive, and consumer electronics.

The CY7C1471BV25 features a 1-Mbit density, while the CY7C1473BV25 and CY7C1475BV25 support densities of 3-Mbits and 5-Mbits respectively. All three models utilize a 3.3V power supply, and deliver fast access times of 5 ns (for CY7C1471BV25) and 6 ns (for CY7C1473BV25 and CY7C1475BV25). This rapid access enables quicker data retrieval and overall enhanced system performance.

One of the standout features of these SRAM devices is their asynchronous operation, which allows for straightforward integration into existing systems without the need for complex timing protocols. They can be easily interfaced with various microcontrollers and digital signal processors, providing flexibility and ease of use. Additionally, the devices are available in multiple package options, including the widely used TSOP and BGA formats, enabling designers to choose the best fit for their specific layouts.

In terms of technology, these SRAMs leverage advanced CMOS manufacturing processes, which contribute to their low power consumption and high reliability. With sleep modes and low standby current, they are particularly suited for battery-operated devices that demand energy efficiency.

Cypress products are renowned for their reliability and robustness, ensuring that the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25 can withstand the demands of harsh environments and extended usage. The devices also incorporate features such as high-speed data ports, which facilitate bidirectional data flow, making them optimal for both read and write operations.

In summary, the CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25 SRAMs by Cypress are excellent choices for those seeking high-performance, low-power memory solutions. Their advanced technology, combined with a variety of features and options, caters to the needs of many industries, paving the way for innovative designs in modern electronics.

Contents

Selection Guide Functional Description FeaturesDescription 133 MHz 100 MHz Unit Cypress Semiconductor Corporation 198 Champion Court Logic Block Diagram CY7C1473BV25 4M x Logic Block Diagram CY7C1471BV25 2M x Logic Block Diagram CY7C1475BV25 1M x CY7C1471BV25 Pin Configurations CY7C1473BV25 CY7C1473BV25 4M x Ball Fbga 15 x 17 x 1.4 mm Pinout CY7C1471BV25 2M x NC/1G Ball Fbga 14 x 22 x 1.76 mm Pinout CY7C1475BV25 1M × Power Supply Inputs to the Core of the Device Mode Input. Selects the Burst Order of the DevicePower Supply for the IO Circuitry Pin Definitions Name Description Pin Definitions Functional OverviewName Description TDI First Second Third Fourth Address A1 A0 ZZ Mode Electrical CharacteristicsParameter Description Test Conditions Min Max Unit Operation Address Truth TableUsed Function Truth Table for Read/Write Ieee 1149.1 Serial Boundary Scan Jtag TAP Controller State Diagram TAP Registers TAP Timing TAP DC Electrical Characteristics And Operating Conditions TAP AC Switching Characteristics5V TAP AC Test Conditions Identification Codes Instruction Description Scan Register Sizes Register Name Bit Size Boundary Scan Exit Order 4M x Bit # Ball ID Boundary Scan Exit Order 2M x Bit # Ball IDBit # Ball ID Boundary Scan Exit Order 1M x Bit # Ball ID Maximum Ratings Electrical CharacteristicsOperating Range Range Ambient Thermal Resistance CapacitanceParameter Description Test Conditions Tqfp Fbga Unit Setup Times Switching CharacteristicsParameter Description 133 MHz 100 MHz Unit Min Max Output Times Read Rite Address Switching WaveformsStall ZZ Mode Timing Ordering Information Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mm Package Diagrams Ball Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm Document History Issue Orig. Description of Change Date